Search Results - "Teng, Chih Sieh"

n+-Poly-to-n+-silicon capacitor structures for single poly analog CMOS and BiCMOS processes by TIAN-I LIOU, CHIH-SIEH TENG

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Modeling the voltage coefficient of linear MOS capacitor by Chen, H.-S., Tantasood, P., Chen, H.-Y., Yeh, C.-S., Teng, C.-S.

“…A one-dimensional model for analyzing the voltage coefficient of the linear MOS capacitor is presented. This model takes into account the capacitances and the…”
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Submicron Large-Angle-Tilt Implanted Drain technology for mixed-signal applications by Hung-Sheng Chen, Ji Zhao, Chih Sieh Teng, Moberly, L., Lahri, R.

“…This paper reports the use of LATID in submicron MOS technology to improve both analog and digital device performance and reliability. It is demonstrated that…”
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Ion beam shadowing effect in submicromometer large-angle-tilt implanted drain (latid) MOSFETs by HUNG-SHENG CHEN, CHIH-SIEH TENG, MOBERLY, L, LAHRI, R

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n super(+)-poly-to-n super(+)-silicon capacitor structures for single-poly analog CMOS and BiCMOS processes by Liou, Tian-I, Teng, Chih-Sieh

“…n super(+)-Poly-to-n super(+)-silicon precision capacitor structures formed by utilizing an n super(+) phosphorus implant and an oxide layer grown…”
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Ion beam shadowing effect in submicrometer large-angle-tilt implanted drain (LATID) MOSFETs by Hung-Sheng Chen, Chih-Sieh Teng, Moberly, Larry, Lahri, Rajeeva

“…An orientation-dependent device characteristic in LATID MOSFETs is reported. By controlled device fabrication splits, it is confirmed that the…”
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Analog characteristics of drain engineered submicron MOSFETs for mixed-signal applications by Chen, Hung-Sheng, Teng, Chih Sieh, Zhao, Ji, Moberly, Larry, Lahri, Rajeeva

“…Drain engineered MOSFETs are compared in terms of their impact on analog performance for submicron mixed-signal applications. The high energy implanted lightly…”
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INFRARED EXTRINSIC MOSFET DETECTORS WITH AND WITHOUT MEMORY, BASED UPON EPITAXIAL SILICON/GERMANIUM ALLOY by TENG, CHIH-SIEH

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A CMOS process for mixed mode signal design by Hung-Sheng Chen, Chih Sieh Teng, Ji Zhao, Moberly, L., Chin-Miin Shyu, Bergemont, A.

“…In this paper we describe a modular approach to convert digital CMOS process for mixed-signal CMOS applications by incorporating LATID NMOSFET, HALO PMOSFET,…”
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AIDE (Angle-Implanted Drain and Emitter): A BiCMOS technology module for mixed-signal applications by Hung-Sheng Chen, Ji Zhao, Chih Sieh Teng, Len Yi Leu

“…Increased mixed-signal device performance and reliability in a BiCMOS technology is achieved by using Angle-Implanted Drain and Emitter (AIDE) technology. An…”
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Hot-electron-induced degradation of conventional, minimum overlap, LDD and DDD N-channel MOSFETs by Liou, T.-I., Teng, C.-S., Merrill, R.B.

“…Substrate current characteristics of conventional minimum overlap, DDD (double-diffused drain), and LDD (lightly doped drain) n-channel MOSFETs with various…”
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