Search Results - "Tekcan, Burak"

Tapered InP nanowire arrays for efficient broadband high-speed single-photon detection by Gibson, Sandra J., van Kasteren, Brad, Tekcan, Burak, Cui, Yingchao, van Dam, Dick, Haverkort, Jos E. M., Bakkers, Erik P. A. M., Reimer, Michael E.

“…Superconducting nanowire single-photon detectors with peak efficiencies above 90% and unrivalled timing jitter (<30 ps) have emerged as a potent technology for…”
Get full text

Semiconductor nanowire metamaterial for broadband near-unity absorption by Tekcan, Burak, van Kasteren, Brad, Grayli, Sasan V., Shen, Daozhi, Tam, Man Chun, Ban, Dayan, Wasilewski, Zbigniew, Tsen, Adam W., Reimer, Michael E.

“…The realization of a semiconductor near-unity absorber in the infrared will provide new capabilities to transform applications in sensing, health, imaging, and…”
Get full text

Atomic layer deposited HfO2 based metal insulator semiconductor GaN ultraviolet photodetectors by Kumar, Manoj, Tekcan, Burak, Okyay, Ali Kemal

“…A report on GaN based metal insulator semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with atomic layer deposited (ALD) 5-nm-thick HfO2 insulating…”
Get full text

Performance enhancement of GaN metal–semiconductor–metal ultraviolet photodetectors by insertion of ultrathin interfacial HfO2 layer by Kumar, Manoj, Tekcan, Burak, Okyay, Ali Kemal

“…The authors demonstrate improved device performance of GaN metal–semiconductor–metal ultraviolet (UV) photodetectors (PDs) by ultrathin HfO2 (UT-HfO2) layer on…”
Get full text

A Near-Infrared Range Photodetector Based on Indium Nitride Nanocrystals Obtained Through Laser Ablation by Tekcan, Burak, Alkis, Sabri, Alevli, Mustafa, Dietz, Nikolaus, Ortac, Bulend, Biyikli, Necmi, Okyay, Ali Kemal

“…We present a proof-of-concept photodetector that is sensitive in the near-infrared (NIR) range based on InN nanocrystals. Indium nitride nanocrystals (InN-NCs)…”
Get full text

Performance enhancement of GaN metal–semiconductor–metal ultraviolet photodetectors by insertion of ultrathin interfacial HfO{sub 2} layer by Kumar, Manoj, Tekcan, Burak, Okyay, Ali Kemal

“…The authors demonstrate improved device performance of GaN metal–semiconductor–metal ultraviolet (UV) photodetectors (PDs) by ultrathin HfO{sub 2} (UT-HfO{sub…”
Get full text

Atomic layer deposited HfO sub(2) based metal insulator semiconductor GaN ultraviolet photodetectors by Kumar, Manoj, Tekcan, Burak, Okyay, Ali Kemal

“…A report on GaN based metal insulator semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with atomic layer deposited (ALD) 5-nm-thick HfO sub(2)…”
Get full text

Memory effect by charging of ultra-small 2-nm laser-synthesized solution processable Si-nanoparticles embedded in Si-Al2O3-SiO2 structure by El-Atab, Nazek, Rizk, Ayman, Tekcan, Burak, Alkis, Sabri, Okyay, Ali K., Nayfeh, Ammar

“…A memory structure containing ultra‐small 2‐nm laser‐synthesized silicon nanoparticles is demonstrated. The Si‐nanoparticles are embedded between an atomic…”
Get full text

Memory effect by charging of ultra‐small 2‐nm laser‐synthesized solution processable Si‐nanoparticles embedded in Si–Al 2 O 3 –SiO 2 structure [Phys. Status Solidi A 212 , 1751–1755 (2015)] by El‐Atab, Nazek, Rizk, Ayman, Tekcan, Burak, Alkis, Sabri, Okyay, Ali K., Nayfeh, Ammar

Get full text

Memory effect by charging of ultra-small 2-nm laser-synthesized solution processable Si-nanoparticles embedded in Si-Al2O3-SiO2 structure [Phys. Status Solidi A 212, 1751-1755 (2015)] by El-Atab, Nazek, Rizk, Ayman, Tekcan, Burak, Alkis, Sabri, Okyay, Ali K., Nayfeh, Ammar

Get full text

Memory effect by charging of ultra-small 2-nm laser-synthesized solution processable Si-nanoparticles embedded in Si-Al sub(2)O sub(3)-SiO sub(2) structure by El-Atab, Nazek, Rizk, Ayman, Tekcan, Burak, Alkis, Sabri, Okyay, Ali K, Nayfeh, Ammar

“…A memory structure containing ultra-small 2-nm laser-synthesized silicon nanoparticles is demonstrated. The Si-nanoparticles are embedded between an atomic…”
Get full text

Memory effect by charging of ultra-small 2-nm laser-synthesized solution processable Si-nanoparticles embedded in Si-Al 2 O 3 -SiO 2 structure: Si-nanoparticles embedded in Si-Al 2 O 3 -SiO 2 by El-Atab, Nazek, Rizk, Ayman, Tekcan, Burak, Alkis, Sabri, Okyay, Ali K., Nayfeh, Ammar

Get full text

Using nanogap in label-free impedance based electrical biosensors to overcome electrical double layer effect by Okyay, Ali Kemal, Hanoglu, Oguz, Yuksel, Mustafa, Acar, Handan, Sülek, Selim, Tekcan, Burak, Agan, Sedat, Biyikli, Necmi, Guler, Mustafa O.

“…Point-of-care biosensor applications require low-cost and low-power solutions. They offer being easily accessible at home site. They are usable without any…”
Get full text

Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films by Bolat, Sami, Tekcan, Burak, Ozgit-Akgun, Cagla, Biyikli, Necmi, Okyay, Ali Kemal

“…Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metal–semiconductor–metal (MSM) photodetectors, based on GaN films grown by…”
Get full text

Investigation of Photodetectors Based on Iii-Nitride and Metal Oxide Thin Films Deposited by Atomic Layer Deposition by Tekcan, Burak

“…Gallium Nitride (GaN), one of the most attractive optoelectronic materials today with a direct wide band gap of 3.4eV and high electron saturation velocity of,…”
Get full text

Semiconductor nanowire metamaterial for broadband near-unity absorption by Tekcan, Burak, van Kasteren, Brad, Grayli, Sasan V, Shen, Daozhi, Tam, Man Chun, Ban, Dayan, Wasilewski, Zbigniew, Tsen, Adam W, Reimer, Michael E

“…Sci Rep 12, 9663 (2022) The realization of a semiconductor near-unity absorber in the infrared will provide new capabilities to transform applications in…”
Get full text

Low temperature ALD grown ZnO as emitter and TCO for a thin-film a-Si PIN solar cells by Alnuaimi, Aaesha, Tekcan, Burak, Okyay, Ali K., Nayfeh, Ammar

“…The use of low temperature ALD grown ZnO as emitter and TCO coating for a-Si PIN solar cells is studied. Several cells are fabricated with 30nm ALD ZnO on top…”
Get full text

Hollow-cathode plasma-assisted atomic layer deposition: A novel route for low-temperature synthesis of crystalline III-nitride thin films and nanostructures by Biyikli, Necmi, Ozgit-Akgun, Cagla, Goldenberg, Eda, Haider, Ali, Kizir, Seda, Uyar, Tamer, Bolat, Sami, Tekcan, Burak, Okyay, Ali Kemal

“…Hollow cathode plasma-assisted atomic layer deposition is a promising technique for obtaining III-nitride thin films with low impurity concentrations at low…”
Get full text