Search Results - "Teich, M.C."
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Impact-ionization and noise characteristics of thin III-V avalanche photodiodes
Published in IEEE transactions on electron devices (01-12-2001)“…It is, by now, well known that McIntyre's localized carrier-multiplication theory cannot explain the suppression of excess noise factor observed in avalanche…”
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2
Dead-space-based theory correctly predicts excess noise factor for thin GaAs and AlGaAs avalanche photodiodes
Published in IEEE transactions on electron devices (01-03-2000)“…The conventional McIntyre carrier multiplication theory for avalanche photodiodes (APDs) does not adequately describe the experimental results obtained from…”
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3
Boundary effects on multiplication noise in thin heterostructure avalanche photodiodes: theory and experiment [Al/sub 0.6/Ga/sub 0.4/As/GaAs]
Published in IEEE transactions on electron devices (01-12-2002)“…The history-dependent recurrence theory for multiplication noise in avalanche photodiodes (APDs), developed by Hayat et al., is generalized to include…”
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4
Detection efficiencies and generalized breakdown probabilities for nanosecond-gated near infrared single-photon avalanche photodiodes
Published in IEEE journal of quantum electronics (01-02-2006)“…A rigorous model is developed for determining single-photon quantum efficiency (SPQE) of single-photon avalanche photodiodes (SPADs) with simple or…”
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5
Statistical correlation of gain and buildup time in APDs and its effects on receiver performance
Published in Journal of lightwave technology (01-02-2006)“…This paper reports a novel recurrence theory that enables us to calculate the exact joint probability density function (pdf) of the random gain and the random…”
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6
Gain-bandwidth characteristics of thin avalanche photodiodes
Published in IEEE transactions on electron devices (01-05-2002)“…The frequency-response characteristics of avalanche photodiodes (APDs) with thin multiplication layers are investigated by means of a recurrence technique that…”
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7
Breakdown probabilities for thin heterostructure avalanche photodiodes
Published in IEEE journal of quantum electronics (01-01-2003)“…The recurrence theory for the breakdown probability in avalanche photodiodes (APDs) is generalized to heterostructure APDs that may have multiple…”
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8
Effect of dead space on gain and noise of double-carrier-multiplication avalanche photodiodes
Published in IEEE transactions on electron devices (01-03-1992)“…The effect of dead space on the statistics of the gain in a double-carrier-multiplication avalanche photodiode (APD) is determined using a recurrence method…”
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9
Effect of stochastic dead space on noise in avalanche photodiodes
Published in IEEE transactions on electron devices (01-05-2004)“…A stochastic dead-space model for impact ionization is developed and used to study the effect of the soft nature of the ionization capability of carriers on…”
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10
Gain-bandwidth product optimization of heterostructure avalanche photodiodes
Published in Journal of lightwave technology (01-05-2005)“…A generalized history-dependent recurrence theory for the time-response analysis is derived for avalanche photodiodes with multilayer, heterojunction…”
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11
Information-theoretic criterion for the performance of single-photon avalanche photodiodes
Published in IEEE photonics technology letters (01-10-2005)“…A channel-capacity metric is introduced for assessing the performance of single-photon avalanche photodiodes (SPADs) when used as detectors in laser…”
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12
Branching processes in quantum electronics
Published in IEEE journal of selected topics in quantum electronics (01-11-2000)“…Noise and random fluctuations play an important role in quantum electronic devices and systems. Such fluctuations reside, for example, in the random creation…”
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13
Effect of dead space on the excess noise factor and time response of avalanche photodiodes
Published in IEEE transactions on electron devices (01-09-1990)“…The effect of dead space on the statistics of the gain process in continuous-multiplication avalanche photodiodes (APDs) is determined using the theory of…”
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14
Spectral characteristics of the responses of primary auditory-nerve fibers to amplitude-modulated signals
Published in Hearing research (01-05-1989)“…The spectral responses of cat single primary auditory nerve fibers to sinusoidal amplitude-modulated (AM) and double-sideband (DSB) acoustic signals applied to…”
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15
Optimal excess noise reduction in thin heterojunction Al0.6Ga0.4As-GaAs avalanche photodiodes
Published in IEEE journal of quantum electronics (01-10-2003)“…Computations show that devices can be optimally designed through judicious choice of the charge-layer width to produce excess noise factor levels that are…”
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16
Optimized breakdown probabilities in Al/sub 0.6/Ga/sub 0.4/As-GaAs heterojunction avalanche photodiodes
Published in IEEE electron device letters (01-09-2004)“…Recently, it has been shown that the noise characteristics of heterojunction Al/sub 0.6/Ga/sub 0.4/As-GaAs avalanche photodiodes (APDs) can be optimized by…”
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Optimized Breakdown Probabilities in Al $_0.6$ Ga $_0.4$ As–GaAs Heterojunction Avalanche Photodiodes
Published in IEEE electron device letters (01-09-2004)“…Recently, it has been shown that the noise characteristics of heterojunction Al/0.6/Ga/0.4/As-GaAs avalanche photodiodes (APDs) can be optimized by proper…”
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18
Fractal character of the auditory neural spike train
Published in IEEE transactions on biomedical engineering (01-01-1989)“…Long-counting-time pulse-number distributions (PNDs) were measured from a broad variety of cat primary auditory fibers using different tone and noise stimuli,…”
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19
Power-law shot noise
Published in IEEE transactions on information theory (01-11-1990)“…The behavior of power-law shot noise, for which the associated impulse response functions assume a decaying power-law form, is explored. Expressions are…”
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Optimal excess noise reduction in thin heterojunction Al/sub 0.6/Ga/sub 0.4/As-GaAs avalanche photodiodes
Published in IEEE journal of quantum electronics (01-10-2003)“…It has been recently found that the initial-energy effect, which is associated with the finite initial energy of carriers entering the multiplication region of…”
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