Gallium-Doped Tin Oxide Nano-Cuboids for Improved Dye Sensitized Solar Cell

Tin dioxide (SnO2) is a potential candidate to replace conventional titanium dioxide (TiO2) in dye-sensitized solar cells (DSSCs) because of its wider bandgap and higher electron mobility. However, SnO2 suffers from low band edge that causes severe backflow of electrons towards electrolyte (charge r...

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Bibliographic Details
Published in:	ACS applied materials & interfaces Vol. 5; no. 21; pp. 11377 - 11382
Main Authors:	Teh, Jun Jie, Ting, Siong Luong, Leong, Kam Chew, Li, Jun, Chen, Peng
Format:	Journal Article
Language:	English
Published:	United States American Chemical Society 13-11-2013
Subjects:	tin oxide band edge charge recombination nano-cuboid dye sensitized solar cell gallium doping
Online Access:	Get full text
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Summary:	Tin dioxide (SnO2) is a potential candidate to replace conventional titanium dioxide (TiO2) in dye-sensitized solar cells (DSSCs) because of its wider bandgap and higher electron mobility. However, SnO2 suffers from low band edge that causes severe backflow of electrons towards electrolyte (charge recombination). Herein, we demonstrate that gallium (Ga) doping can increase the band edge of SnO2, and we show that DSSCs using a Ga-doped SnO2 nano-cuboids based photoanode offer improved open circuit potential (∼0.74 V), fill factor (∼73.7%), and power conversion efficiency (∼4.05%).
Bibliography:	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23
ISSN:	1944-8244 1944-8252
DOI:	10.1021/am403640s