Search Results - "Tegude, F. J."

Electrical characterization and transport model of n-gallium nitride nanowires by Benner, O., Blumberg, C., Arzi, K., Poloczek, A., Prost, W., Tegude, F.-J.

“…The transport data of n-doped gallium-nitride self-assembled nanowires grown by metal-organic vapor-phase-epitaxy are determined. The wire diameter varies from…”
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Axial pn-junctions formed by MOVPE using DEZn and TESn in vapor–liquid–solid grown GaAs nanowires by Regolin, I., Gutsche, C., Lysov, A., Blekker, K., Li, Zi-An, Spasova, M., Prost, W., Tegude, F.-J.

“…We report on axial pn-junctions in GaAs nanowires. The nanowires were grown by MOVPE on (1 1 1)B GaAs substrates using the vapor–liquid–solid mechanism in…”
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High Transconductance MISFET With a Single InAs Nanowire Channel by Do, Q.-T., Blekker, K., Regolin, I., Prost, W., Tegude, F.J.

“…Metal-insulator field-effect transistors (FETs) are fabricated using a single n-InAs nanowire (NW) with a diameter of d = 50 nm as a channel and a silicon…”
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Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (1 1 1) GaAs by Regolin, I., Sudfeld, D., Lüttjohann, S., Khorenko, V., Prost, W., Kästner, J., Dumpich, G., Meier, C., Lorke, A., Tegude, F.-J.

“…GaAs/In x Ga 1− x As/GaAs heterostructures nanowires were grown by metal-organic vapor-phase epitaxy on (1 1 1)B GaAs substrate using the vapor–liquid–solid…”
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Passivation of InP-based HBTs by Jin, Z., Uchida, K., Nozaki, S., Prost, W., Tegude, F.-J.

“…The surface effects, the (NH 4) 2S and low-temperature-deposited SiN x passivations of InP-based heterostructure bipolar transistors (HBTs) have been…”
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Threshold logic circuit design of parallel adders using resonant tunneling devices by Pacha, C., Auer, U., Burwick, C., Glosekotter, P., Brennemann, A., Prost, W., Tegude, F.-J., Goser, K.F.

“…Resonant tunneling devices and circuit architectures based on monostable-bistable transition logic elements (MOBILEs) are promising candidates for future…”
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Photoluminescence of GaAs nanowhiskers grown on Si substrate by Khorenko, V., Regolin, I., Neumann, S., Prost, W., Tegude, F.-J., Wiggers, H.

“…GaAs nanowhiskers were grown by metalorganic vapor-phase epitaxy on (111) Si substrates using the vapor-liquid-solid growth mode. The diameter of the…”
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Surface recombination mechanism in graded-base InGaAs-InP HBTs by Jin, Z., Neumann, S., Prost, W., Tegude, F.-J.

“…The surface recombination at extrinsic base region in graded-base InGaAs-InP heterostructure bipolar transistors (HBTs) is studied. The (NH/sub 4/)/sub 2/S…”
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Surface-recombination-free InGaAs/InP HBTs and the base contact recombination by Jin, Z., Liu, X., Prost, W., Tegude, F.-J.

“…Surface-recombination-free InGaAs/InP HBTs with graded base have been demonstrated. The HBTs were passivated by ammonium sulfide. The current gain of the…”
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High performance III/V RTD and PIN diode on a silicon (001) substrate by Prost, W., Khorenko, V., Mofor, A.-C., Neumann, S., Poloczek, A., Matiss, A., Bakin, A., Schlachetzki, A., Tegude, F.-J.

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Growth and characterization of InAlP/InGaAs double barrier RTDs by Neumann, S., Velling, P., Prost, W., Tegude, F.-J.

“…The material system InAlP/InGaAs is of interest especially due to the high conduction band discontinuity at the heterojunction. The composition of In 0.67Al…”
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Low-voltage MOBILE logic module based on Si/SiGe interband tunnelling diodes by Auer, U., Prost, W., Agethen, M., Tegude, F.-J., Duschl, R., Eberl, K.

“…Si/SiGe interband tunnelling diodes have been grown by MBE on high resistivity (n/sup -/) silicon substrates. The device enables a very low voltage, high-speed…”
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Improved structure and performance of the GaAsSb/InP interface in a resonant tunneling diode by Kollonitsch, Z., Schimper, H.-J., Seidel, U., Möller, K., Neumann, S., Tegude, F.-J., Willig, F., Hannappel, T.

“…GaAsSb/InP(1 0 0) hetero-interfaces were studied with regard to the performance of metal organic chemical vapor deposition (MOCVD)-grown p-type resonant…”
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Erratum: “Electrical characterization and transport model of n-gallium nitride nanowires” [Appl. Phys. Lett. 107, 082103 (2015)] by Benner, O., Blumberg, C., Arzi, K., Poloczek, A., Prost, W., Tegude, F.-J.

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Single InGaAs nanowhiskers characterized by analytical transmission electron microscopy by Sudfeld, D., Regolin, I., Kästner, J., Dumpich, G., Khorenko, V., Prost, W., Tegude, F.-J.

“…Single crystal In x Ga 1−x As nanowhisker were grown by metal-organic vapour-phase epitaxy on (111)B GaAs substrates using the vapour-liquid-solid growth mode…”
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Manufacturability and robust design of nanoelectronic logic circuits based on resonant tunnelling diodes by Prost, W., Auer, U., Tegude, F.-J., Pacha, C., Goser, K. F., Janssen, G., van der Roer, T.

“…The manufacturability of logic circuits based on quantum tunnelling devices, namely double‐barrier resonant tunnelling diodes (RTD), is studied in detail. The…”
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Growth of carbon-doped LP-MOVPE InAlAs using non-gaseous sources by Neumann, S., Prost, W., Tegude, F.-J.

“…Carbon-doped InAlAs grown by LP-MOVPE lattice matched on InP is investigated at various growth temperatures. The liquid source tertiarybutylarsin instead of…”
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Passivation of InP/GaAsSb/InP double heterostructure bipolar transistors with ultra thin base layer by low-temperature deposited SiNx by JIN, Z, NEUMANN, S, PROST, W, TEGUDE, F.-J

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ICP-RIE etching of self-aligned InP based HBTs with Cl 2/N 2 chemistry by Topaloglu, S., Prost, W., Tegude, F.-J.

“…We report on a simple Inductively Coupled Plasma-Reactive Ion Etching (ICP-RIE) process with Cl 2/N 2 chemistry to process InP based, self-aligned HBTs with…”
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Growth of III/V resonant tunnelling diode on Si substrate with LP-MOVPE by Neumann, S., Bakin, A., Velling, P., Prost, W., Wehmann, H.-H., Schlachetzki, A., Tegude, F.-J.

“…We present in this work the first monolithic integration of a III/V resonant tunnelling diode (RTD) on an exactly (0 0 1)-oriented Si substrate. The…”
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