Search Results - "Tasyurek, E."

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    High performance germanium n-MOSFET with antimony dopant activation beyond 1×1020 cm−3 by Thareja, G, Liang, J, Chopra, S, Adams, B, Patil, N, Cheng, S.-L, Nainani, A, Tasyurek, E, Kim, Y, Moffatt, S, Brennan, R, McVittie, J, Kamins, T, Saraswat, K, Nishi, Y

    “…For the first time, high performance Ge nMOSFET is fabricated using laser annealing of ion-implanted antimony (Sb) dopants which provides donor activation…”
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    Conference Proceeding
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    Ultrafast absorption recovery in germanium/silicon-germanium quantum wells by Tasyurek, E, Claussen, S A, Roth, J E, Miller, D A B

    “…We show ultrafast absorption changes in germanium-based quantum wells, attributing these to exciton bleaching, ultrafast intervalley scattering, carrier escape…”
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    Conference Proceeding
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    Simple electroabsorption calculator for germanium quantum well devices by Schaevitz, R. K., Edwards, E. H., Ren, S., Ly-Gagnon, D. S., Audet, R. M., Yiwen Rong, Claussen, S. A., Tasyurek, E., Roth, J. E., Harris, J. S., Miller, D. A. B.

    “…We present a simple quantum well electroabsorption calculator (SQWEAC) for the germanium material system to facilitate optoelectronic modulator design. We show…”
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    Conference Proceeding
  5. 5

    Spot size effects in asymmetric fabry-perot electroabsorption modulators by Audet, R M, Edwards, E H, Claussen, S A, Shen Ren, Schaevitz, R K, Taşyürek, E, Miller, D A B

    “…Simulations of an asymmetric Fabry-Perot modulator reveal degradation of the contrast ratio as the incident spot size is decreased. The minimum practical spot…”
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    Conference Proceeding
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    Simple electroabsorption model for silicongermanium/germanium quantum well devices by Schaevitz, R K, Roth, J E, Edwards, E H, Audet, R M, Claussen, S A, Taşyürek, E, Shen Ren, Yiwen Rong, Harris, J S, Miller, D A B

    “…We present a simple model for the electroabsorption spectrum of germanium-based quantum wells, which can be used to optimize material design for modulators…”
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    Conference Proceeding