Search Results - "Tassev, V.L."

Modeling of gas phase and surface reactions in an aluminum nitride growth system by Cai, D., Zheng, L.L., Zhang, H., Tassev, V.L., Bliss, D.F.

“…This paper presents systematic study of an improved vapor-phase expitaxy system—a halide vapor transport epitaxy (HVTE) system [D.F. Bliss, V.L. Tassev, D…”
Get full text

Aluminum nitride substrate growth by halide vapor transport epitaxy by Bliss, D.F., Tassev, V.L., Weyburne, D., Bailey, J.S.

“…High-quality AlN layers with thickness up to 50 μm have been grown by HVTE at growth rates up to 60 μm/h at deposition temperatures of 1000–1100°C in the…”
Get full text

Modeling of aluminum nitride growth by halide vapor transport epitaxy method by Cai, D., Zheng, L.L., Zhang, H., Tassev, V.L., Bliss, D.F.

“…A halide vapor transport epitaxy (HVTE) system was designed and built at USAF Research Laboratory to grow high-quality aluminum nitride film at growth rates up…”
Get full text