Design and simulation of nitrogenated holey graphene (C2N) based heterostructure solar cell by SCAPS-1D

Design and simulation of nitrogenated holey graphene (C2N) based heterostructure solar cell by SCAPS-1D

The nitrogenated holey Graphene (C2N) based solar cell has been modeled and analyzed by using SCAPS-1D. Initially, a reported structure (TCO/IGZO/C2N) has been considered and improved by incorporating Al and Pt as front and back contact, respectively. Then, a novel device structure (Al/TCO/IGZO/C2N/...

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Bibliographic Details
Published in:Heliyon Vol. 10; no. 1; p. e23197
Main Authors: Taseen, Tasnimul Islam, Julkarnain, M., Islam, Abu Zafor Md Touhidul
Format: Journal Article
Language:English
Published: England Elsevier Ltd 15-01-2024
Elsevier
Subjects:
BSF layer
C2N
CZT
PCE
Photovoltaics
SCAPS-1D
Solar cells
Solar cells
BSF layer
PCE
SCAPS-1D
CZT
C2N
Photovoltaics
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Summary:The nitrogenated holey Graphene (C2N) based solar cell has been modeled and analyzed by using SCAPS-1D. Initially, a reported structure (TCO/IGZO/C2N) has been considered and improved by incorporating Al and Pt as front and back contact, respectively. Then, a novel device structure (Al/TCO/IGZO/C2N/CZT/Pt) has been proposed by inserting a BSF layer with heavily doped p-CZT material. The outcomes of the suggested cell structure have been analyzed numerically by changing different physical parameters. The absorber and BSF layer's thickness has been optimized as 0.6 μm and 0.4 μm, respectively. The cell performance is significantly declined when the bulk defect density in C2N exceeds the value of 1015 cm−3. The rising of device operating temperature shows a negative effect on performance. From this analysis, the structure has been optimized according to device performance. The optimized results have been achieved with the VOC, JSC, FF and efficiency (eta) of 1.40 V, 22.59 mA/cm2, 89.02%, and 28.16%, respectively. This research contributes to enriching the knowledge on the field of C2N materials and its use in optoelectronic applications.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
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ISSN:2405-8440
2405-8440
DOI:10.1016/j.heliyon.2023.e23197