Search Results - "Tapajna, M."

Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress by Tapajna, M., Hilt, O., Bahat-Treidel, E., Wurfl, J., Kuzmik, J.

“…Gate reliability of normally-off p-type-GaN/AlGaN/GaN high-electron mobility transistors grown on Si substrate subjected to forward bias stress at different…”
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Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs by Pohorelec, O., Ťapajna, M., Gregušová, D., Gucmann, F., Hasenöhrl, S., Haščík, Š., Stoklas, R., Seifertová, A., Pécz, B., Tóth, L., Kuzmík, J.

“…[Display omitted] •Normally-off devices prepared by polarization engineering using InGaN layer.•Polarization charge at the InGaN/AlGaN interface confirmed by…”
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Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition by Stoklas, R., Gregušová, D., Hasenöhrl, S., Brytavskyi, E., Ťapajna, M., Fröhlich, K., Haščík, Š., Gregor, M., Kuzmík, J.

“…[Display omitted] •X-ray analysis of MOS-HFETs with HfO2 gate oxide prepared by ALD at two different precursors “water“ and “ozone“.•The gate leakage and RF…”
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Structural and dielectric properties of Ru-based gate/Hf-doped Ta2O5 stacks by PASKALEVA, A, TAPAJNA, M, DOBROCKA, E, HUSEKOVA, K, ATANASSOVA, E, FRÖHLICH, K

“…Hf-doped Ta2O5 thin films are studied with respect to their composition, dielectric and electrical properties. The incorporation of Hf is performed by…”
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Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates by Tapajna, M., Killat, N., Moereke, J., Paskova, T., Evans, K. R., Leach, J., Li, X., Ozgur, Ü, Morkoc, H., Chabak, K. D., Crespo, A., Gillespie, J. K., Fitch, R., Kossler, M., Walker, D. E., Trejo, M., Via, G. D., Blevins, J. D., Kuball, M.

“…The reliability of AlGaN/GaN HEMTs processed on bulk GaN substrates was studied using electrical and optical methods, showing a decreasing degradation with…”
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A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors by Ťapajna, M., Kuzmík, J.

“…An analytical model for threshold voltage calculation for metal-oxide-semiconductor GaN based high electron mobility transistors is proposed. This model…”
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Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors by Ťapajna, M., Hilt, O., Bahat-Treidel, E., Würfl, J., Kuzmík, J.

“…Gate diode conduction mechanisms were analyzed in normally-off p-GaN/AlGaN/GaN high-electron mobility transistors grown on Si wafers before and after forward…”
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Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device by Gong, Y., Tapajna, M., Bakalova, S., Zhang, Y., Zhang, Y., Edgar, J. H., Dudley, M., Hopkins, M., Kuball, M.

“…B 12 As 2 / SiC p n heterojunction diodes based on the radiation-hard B 12 As 2 deposited on (0001) n -type 4H-SiC via chemical vapor deposition were…”
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Effect of Ti doping on Ta2O5 stacks with Ru and Al gates by PASKALEVA, A, TAPAJNA, M, ATANASSOVA, E, FROHLICH, K, VINCZE, A, DOBROCKA, E

“…The Ti-doped Ta2O5 thin films ( < 10 nm) obtained by rf sputtering are studied with respect to their composition, dielectric and electrical properties. The…”
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Importance of impurity diffusion for early stage degradation in AlGaN/GaN high electron mobility transistors upon electrical stress by Ťapajna, M., Mishra, U. K., Kuball, M.

“…Early stage degradation of AlGaN/GaN high electron mobility transistors (HEMTs) submitted to off- and on-state voltage bias stress was studied using UV…”
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Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs by Blaho, M., Gregušová, D., Haščík, Š., Ťapajna, M., Fröhlich, K., Šatka, A., Kuzmík, J.

“…Threshold voltage instabilities are examined in self-aligned E/D-mode n++ GaN/InAlN/GaN MOS HEMTs with a gate length of 2 μm and a source-drain spacing of 10…”
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Precise determination of metal effective work function and fixed oxide charge in MOS capacitors with high- κ dielectric by Ťapajna, M., Hušeková, K., Espinos, J.P., Harmatha, L., Fröhlich, K.

“…Effective metal work function, Φ m,eff, and oxide charge, Q ox, were determined on MOS capacitors with slanted high- κ dielectric. Φ m,eff and Q ox were…”
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InN: Breaking the limits of solid-state electronics by Kuzmík, J., Adikimenakis, A., Ťapajna, M., Gregušová, D., Haščík, Š., Dobročka, E., Tsagaraki, K., Stoklas, R., Georgakilas, A.

“…Further progress of information technologies is hampered by the limited operational speed and frequency of contemporary electronic devices. Consequently, there…”
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Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties by Ťapajna, M., Stoklas, R., Gregušová, D., Gucmann, F., Hušeková, K., Haščík, Š., Fröhlich, K., Tóth, L., Pécz, B., Brunner, F., Kuzmík, J.

“…•We present a simple approach to manipulate the so-called surface donors in Al2O3/GaN/AlGaN/GaN MOS-heterojunctions.•This enebles technological control of the…”
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Evidence of hafnia oxygen vacancy defects in MOCVD grown HfxSi1-xOy ultrathin gate dielectrics gated with Ru electrode by TAPAJNA, M, ROSOVA, A, HUSEKOVA, K, ROOZEBOOM, F, DOBROCKA, E, FRÖHLICH, K

“…We studied the leakage current mechanism in Ru-gated MOS capacitors with ultrathin HfxSi1-xOy gate dielectrics grown by atomic vapour deposition (AVD(R)). The…”
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Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors by Ťapajna, M., Kaun, S. W., Wong, M. H., Gao, F., Palacios, T., Mishra, U. K., Speck, J. S., Kuball, M.

“…Early stage degradation of AlGaN/GaN high electron mobility transistors (HEMTs) with different threading dislocation densities (TDDs) submitted to off-state…”
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Identification of electronic traps in AlGaN/GaN HEMTs using UV light-assisted trapping analysis by Tapajna, M, Simms, R J T, Faqir, M, Kuball, M, Pei, Y, Mishra, U K

“…UV light-assisted trapping analysis in conjunction with electroluminescence studies was employed to identify the location of traps generated in AlGaN/GaN HEMTs…”
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Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors by Ťapajna, M., Jurkovič, M., Válik, L., Haščík, Š., Gregušová, D., Brunner, F., Cho, E.-M., Kuzmík, J.

“…The trapping phenomena in GaN metal-oxide-semiconductor high-electron mobility transistor structures with 10 and 20-nm thick Al2O3 gate dielectric grown by…”
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Electrical and magnetic properties of silicon carbide composites with titanium and niobium carbide as sintering aids by Bystrický, R., Škrátek, M., Rusnák, J., Precner, M., Ťapajna, M., Hnatko, M., Šajgalík, P.

“…Silicon carbide based composites with 30, 40 and 50 wt % of Ti and NbC as sintering additives were prepared by hot-press method. Molar ratio of Ti:NbC was kept…”
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Current conduction mechanism and electrical break-down in InN grown on GaN by Kuzmik, J., Fleury, C., Adikimenakis, A., Gregušová, D., Ťapajna, M., Dobročka, E., Haščík, Š., Kučera, M., Kúdela, R., Androulidaki, M., Pogany, D., Georgakilas, A.

“…Current conduction mechanism, including electron mobility, electron drift velocity (vd ) and electrical break-down have been investigated in a 0.5 μm-thick…”
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