Search Results - "Tao, Renchun"
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Deep‐Ultraviolet Micro‐LEDs Exhibiting High Output Power and High Modulation Bandwidth Simultaneously
Published in Advanced materials (Weinheim) (01-05-2022)“…Deep‐ultraviolet (DUV) solar‐blind communication (SBC) shows distinct advantages of non‐line‐of‐sight propagation and background noise negligibility over…”
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Paving the Way for High‐Performance UVB‐LEDs Through Substrate‐Dominated Strain‐Modulation
Published in Advanced functional materials (01-01-2023)“…AlGaN‐based ultraviolet‐B light‐emitting diodes (UVB‐LEDs) exhibit great potential in phototherapy, vitamin D3 synthesis promotion, plant growth regulation,…”
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3
Room Temperature Triggered Single Photon Emission from Self‐Assembled GaN/AlN Quantum Dot in Nanowire
Published in Advanced functional materials (01-11-2022)“…Room temperature (RT) operation is one of the crucial requirements for the practical applications of single photon emitters. Here, RT triggered single photon…”
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4
Improvement in Modulation Bandwidth of Micro-LED Arrays Based on Low-Temperature-Interlayer Approach
Published in IEEE photonics technology letters (01-07-2022)“…To promote the modulation bandwidth of GaN-based blue micro-light emitting diodes (<inline-formula> <tex-math notation="LaTeX">\mu…”
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5
Impact of quantum dots on III-nitride lasers: a theoretical calculation of threshold current densities
Published in Japanese Journal of Applied Physics (01-06-2019)“…We present a theoretical study on the gain and threshold current density of III-nitride quantum dot (QD) and quantum well (QW) lasers with a comprehensive…”
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6
Lattice Polarity Manipulation of Quasi‐vdW Epitaxial GaN Films on Graphene Through Interface Atomic Configuration
Published in Advanced materials (Weinheim) (01-02-2022)“…Quasi van der Waals epitaxy, a pioneering epitaxy of sp3‐hybridized semiconductor films on sp2‐hybridized 2D materials, provides a way, in principle, to…”
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Modulation bandwidth improvement of GaN-based green micro-LEDs array by polarization-induced p-type doping
Published in Applied physics letters (18-07-2022)“…As one of the most promising candidates for signal carrier sources in visible light communication, GaN-based green micro-light emitting diodes (μ-LEDs) exhibit…”
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8
Lattice‐Asymmetry‐Driven Selective Area Sublimation: A Promising Strategy for III‐Nitride Nanostructure Tailoring
Published in Physica status solidi. PSS-RRL. Rapid research letters (01-07-2024)“…Lattice‐asymmetry‐driven selective area sublimation (SAS) process of GaN is systemically investigated by exploring the in situ dynamic evolution of the…”
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9
Strong coupling in non-polar GaN/AlGaN microcavities with air-gap/III-nitride distributed Bragg reflectors
Published in Applied physics letters (07-09-2015)“…Strong coupling between excitons and photons is experimentally demonstrated in m-plane GaN/AlGaN microcavities (MCs) with air/AlGaN distributed Bragg…”
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10
Impact of Quantum Dots on III-Nitride Lasers: A Theoretical Calculation on Linewidth Enhancement Factors
Published in IEEE journal of selected topics in quantum electronics (01-01-2022)“…III-nitride quantum dot (QD) lasers have potential applications in visible light regime, yet one of its most important dynamic parameters, the linewidth…”
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11
Lattice Polarity Manipulation of Quasi‐vdW Epitaxial GaN Films on Graphene Through Interface Atomic Configuration (Adv. Mater. 5/2022)
Published in Advanced materials (Weinheim) (01-02-2022)“…Interfacial Atomic Configurations In article number 2106814, Kaihui Liu, Xin‐Zheng Li, Xinqiang Wang, and co‐workers profile a novel perspective of the lattice…”
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12
Fabrication and optical properties of non-polar III-nitride air-gap distributed Bragg reflector microcavities
Published in Applied physics letters (11-11-2013)“…Using the thermal decomposition technique, non-polar III-nitride air-gap distributed Bragg reflector (DBR) microcavities (MCs) with a single quantum well have…”
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13
High‐Efficiency E‐Beam Pumped Deep‐Ultraviolet Surface Emitter Based on AlGaN Ultra‐Thin Staggered Quantum Wells
Published in Advanced optical materials (01-09-2022)“…A 2‐inch wafer‐scale electron‐beam (e‐beam) pumped deep‐ultraviolet surface emitter (DUVSE) with high efficiency and high output power at an emission…”
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14
Atomic‐Scale Investigation of the Lattice‐Asymmetry‐Driven Anisotropic Sublimation in GaN
Published in Advanced science (01-08-2022)“…Thermal sublimation, a specific method to fabricate semiconductor nanowires, is an effective way to understand growth behavior as well. Utilizing a…”
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15
Excavating the Communication Performance in GaN‐Based Green Micro‐LEDs: Modular‐Architectured p‐Type Region
Published in Advanced photonics research (01-04-2023)“…To improve the performance of GaN‐based green micro‐light emitting diodes (μ‐LEDs) array, a modular‐architected p‐type region, which consists of…”
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Infrared stimulated emission with an ultralow threshold from low-dislocation-density InN films grown on a vicinal GaN substrate
Published in Fundamental research (Beijing) (01-09-2022)“…Near-infrared stimulated emission from a high-quality InN layer under optical pumping was observed with a threshold excitation power density of 0.3 and 4 kW…”
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17
Strain effect on polarized optical properties of c -plane GaN and m -plane GaN
Published in Physica status solidi. A, Applications and materials science (01-02-2009)“…The polarized optical property of c ‐plane and m ‐plane GaN with varying strain was discussed by analyzing the changes of relative oscillator strength (ROS) of…”
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Journal Article Conference Proceeding -
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Monolithic Dual-Wavelength AlGaN-Based UV-LEDs with Controllable Spectral Profile
Published in ACS photonics (19-06-2024)“…Ultraviolet (UV) light sources with multiple wavelength emissions have many applications in different scenarios. However, there are rare reports on…”
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Room-Temperature Observation of Trapped Exciton-Polariton Emission in GaN/AlGaN Microcavities with Air-Gap/III-Nitride Distributed Bragg Reflectors
Published in ACS photonics (20-07-2016)“…We demonstrate trapped exciton-polariton emission at room temperature from nonpolar GaN/AlGaN cavities sandwiched between air/AlGaN distributed Bragg…”
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20
Low-Resistive Ohmic Contacts in High-Electron-Mobility AlN/GaN Heterostructures by Suppressing the Oxygen Incorporation
Published in ACS applied electronic materials (26-07-2022)“…AlN/GaN heterostructures are pursued for high-speed and high-power devices due to the superiority of their high-mobility and high-density two-dimensional…”
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