Oxygen-Related Defects Introduced by As + -Implantation through Cap Layers in Si Probed by Monoenergetic Positron Beams
The depth distributions and species of defects in 50 keV As + -implanted Si with a cap layer (SiO 2 or SiN) were determined from measurements of the Doppler broadening spectra of the annihilation radiation and the lifetime spectra of positrons. Before annealing, the main species of defects below the...
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| Published in: | Japanese Journal of Applied Physics Vol. 39; no. 11R; pp. 6126 - 6129 |
|---|---|
| Main Authors: | , , , , , , , , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
2000
|
| Online Access: | Get full text |
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| Summary: | The depth distributions and species of defects in 50 keV As
+
-implanted Si with a cap layer (SiO
2
or SiN) were determined from measurements of the Doppler broadening spectra of the annihilation radiation and the lifetime spectra of positrons. Before annealing, the main species of defects below the amorphous region was determined to be divacancies. Upon annealing at 800°C, oxygen-related defects were introduced into the subsurface region (<20–40 nm). The species of these defects was identified as oxygen microclusters. The positrons were trapped by the open spaces adjacent to the clusters, and the size of these spaces was estimated to be close to that of monovacancies. The oxygen-related defects were annealed out after rapid thermal annealing at 1050°C (10 s). As
+
-implantation through the SiN film suppressed the introduction of recoiled oxygen atoms; as a result, the concentration of the oxygen-related defects was decreased. |
|---|---|
| Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.1143/JJAP.39.6126 |