Search Results - "Tanimoto, Masafumi"

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    High Plasma Docosahexaenoic Acid Associated to Better Prognoses of Patients with Acute Decompensated Heart Failure with Preserved Ejection Fraction by Matsuo, Naoaki, Miyoshi, Toru, Takaishi, Atsushi, Kishinoue, Takao, Yasuhara, Kentaro, Tanimoto, Masafumi, Nakano, Yukari, Onishi, Nobuhiko, Ueeda, Masayuki, Ito, Hiroshi

    Published in Nutrients (26-01-2021)
    “…The clinical relevance of polyunsaturated fatty acids (PUFAs) in heart failure remains unclear. The aim of this study was to investigate the association…”
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    Journal Article
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    Observation of tunneling electron luminescence at low temperatures using novel conductive transparent tip by MURASHITA, T, TANIMOTO, M

    “…A novel conductive transparent (CT) tip has been developed that effectively collects tunneling-electron luminescence with a large solid angle of 2 sr in the…”
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    Conference Proceeding Journal Article
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    Quantum interferometric spectroscopy : a novel technique for nanometer-scale characterization of heterostructures by KANISAWA, K, TANIMOTO, M

    Published in Japanese Journal of Applied Physics (01-08-1995)
    “…We propose quantum interferometric spectroscopy (QIS), a novel technique for characterizing heterostructures. Theoretical consideration of tunneling currents…”
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    Conference Proceeding Journal Article
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    Measurements of the three-dimensional impurity profile in Si using chemical etching and scanning tunneling microscopy by TAKIGAMI, T, TANIMOTO, M

    Published in Applied physics letters (20-05-1991)
    “…Three-dimensional boron impurity concentration profiles in silicon substrates have been measured with 10 nm resolution by scanning tunneling microscopy (STM)…”
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    Journal Article
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    Wide terrace formation during metalorganic vapor phase epitaxy of GaAs, AlAs, and AlGaAs by Shinohara, Masanori, Tanimoto, Masafumi, Yokoyama, Haruki, Inoue, Naohisa

    Published in Applied physics letters (12-09-1994)
    “…GaAs, Al0.35Ga0.65As, and AlAs surface terrace structures formed during metalorganic vapor phase epitaxy (MOVPE) on vicinal (001) surfaces are investigated…”
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    Journal Article
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    Nanometer-scale current-voltage spectra measurement of resonant tunneling diodes using scanning force microscopy by TANIMOTO, M, KANISAWA, K, SHINOHARA, M

    “…We demonstrate that a novel method of current-voltage ( I - V ) spectra measurement by scanning force microscopy (SFM) reveals local electrical characteristics…”
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    Conference Proceeding Journal Article
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    Kelvin probe force microscopy for characterization of semiconductor devices and processes by Tanimoto, Masafumi, Vatel, Olivier

    “…Kelvin probe force microscopy was applied to the characterization of Al0.3Ga0.7As/GaAs multilayer structures and Si‐pn structures. The spatial resolution of…”
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    Conference Proceeding
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    Fabrication of rectangular holes along 2×4 unit cells on GaAs(001) reconstructed surface with a scanning tunneling microscope by SUGIYAMA, H, SHINOHARA, M, TANIMOTO, M, INOUE, N

    Published in Japanese Journal of Applied Physics (01-06-1995)
    “…The modification of GaAs (001)-(2×4) reconstructed surface with a scanning tunneling microscope is studied. By applying a high bias voltage pulse between the…”
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    Journal Article
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    Scanning tunneling microscopy of cleaved Si and GaAs surfaces in air by TANIMOTO, M, FURUTA, T, KURIYAMA, Y

    Published in Japanese Journal of Applied Physics (01-02-1989)
    “…Microstructures on cleaved Si and GaAs surfaces were directly observed in air by scanning tunneling microscopy (STM). Although an atom-resolved image of…”
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    Journal Article
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    Growth processes of GaAs grown by atomic layer epitaxy revealed by atomic force microscopy by YOKOYAMA, H, TANIMOTO, M, SHINOHARA, M, INOUE, N

    “…The growth processes of GaAs grown by atomic layer epitaxy (ALE) are examined on an atomic scale using atomic force microscopy (AFM). The examination reveals…”
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    Journal Article
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    Analysis of p+-n junction capacitance with three-dimensional impurity profiling method using scanning tunneling microscopy by TANIMOTO, M, DOUSEKI, T, TAKIGAMI, T

    “…The p + -n junction capacitance characteristics have been analyzed by a novel three-dimensional impurity profiling method using chemical etching and scanning…”
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    Journal Article
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