Search Results - "Tanigawa, Shoichiro"

Evaluation of SOI Substrates by Positron Annihilation by Akira Uedono, Akira Uedono, Atsushi Ogura, Atsushi Ogura, Shoichiro Tanigawa, Shoichiro Tanigawa

“…The annihilation characteristics of positrons in Si-on-insulator (SOI) wafers were studied using a monoenergetic positron beam. From measurements of Doppler…”
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Positron annihilation in vitreous silica glasses by UEDONO, A, TANIGAWA, S

“…The annihilation characteristics of positrons in vitreous silica glasses (v-SiO 2 ) were studied by measurements of two-dimensional angular correlation of…”
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Characterization of low temperature grown Si layer for SiGe pseudo-substrates by positron annihilation spectroscopy by Ueno, Tetsuji, Irisawa, Toshifumi, Shiraki, Yasuhiro, Uedono, Akira, Tanigawa, Shoichiro, Suzuki, Ryoichi, Ohdaira, Toshiyuki, Mikado, Tomohisa

“…To assess the unique properties of low-temperature (LT) grown Si on which high-quality SiGe pseudo-substrates were obtained, positron annihilation spectroscopy…”
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Damage to the silicon substrate by reactive ion etching detected by a slow positron beam by LONG WEI, TABUKI, Y, TANIGAWA, S

“…Defects in reactive ion-etched Si have been investigated by means of a slow positron beam. A thin carbon-containing film (<30 Å) was formed on the Si surface…”
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Defects in ion-implanted 3C-SiC probed by a monoenergetic positron beam by UEDONO, A, ITOH, H, TANIGAWA, S, OHSHIMA, T, AOKI, Y, YOSHIKAWA, M, NASHIYAMA, I, OKUMURA, H, YOSHIDA, S, MORIYA, T, KAWANO, T

“…Defects introduced by 200-keV N 2 + - or Al + -implantation into 3C–SiC were probed by a monoenergetic positron beam. Depth profiles of the defects were…”
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Investigation of Vacancy-Type Defects in P + -Implanted 6H-SiC Using Monoenergetic Positron Beams by Akira Uedono, Akira Uedono, Takeshi Ohshima, Takeshi Ohshima, Hisayoshi Itoh, Hisayoshi Itoh, Ryoichi Suzuki, Ryoichi Suzuki, Toshiyuki Ohdaira, Toshiyuki Ohdaira, Shoichiro Tanigawa, Shoichiro Tanigawa, Yasushi Aoki, Yasushi Aoki, Masahito Yoshikawa, Masahito Yoshikawa, Isamu Nashiyama, Isamu Nashiyama, Tomohisa Mikado, Tomohisa Mikado

“…Vacancy-type defects and their annealing properties for 200 keV P + -implanted 6H-SiC were studied using monoenergetic positron beams. For the specimen with a…”
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The defect characterization of heavily Si-doped molecular beam epitaxy-grown GaAs by the monoenergetic positron method by LONG WEI, YANG-KOO CHO, CHISEI DOSHO, KURIHARA, T, TANIGAWA, S

“…Monoenergetic (100 eV-30 keV) positrons were used as a defect probe for heavily Si-doped GaAs with a thickness of 300nm grown by molecular beam epitaxy (MBE)…”
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Thermal equilibrium defects in anthracene probed by positron annihilation by UEDONO, A, TACHIBANA, M, SHIMIZU, M, SATOH, M, KOJIMA, K, ISHIBASHI, S, KAWANO, T, TANIGAWA, S

“…Defects in anthracene were investigated by the positron annihilation technique. Doppler broadening profiles of the annihilation radiation and lifetime spectra…”
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Silicide-formation-induced defects in Si substrates in Ti/Si and Ni/Si systems by a monoenergetic positron beam by LONG WEI, TANIGAWA, S

“…The formation of silicides via the thin-film deposition of transition metals Ti and Ni onto Si substrates using a monoenergetic positron beam has been…”
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Characterization of metal/GaAs interfaces by monoenergetic positron beam by UEDONO, A, FUJII, S, MORIYA, T, KAWANO, T, TANIGAWA, S

“…Defects at Schottky contacts in GaAs devices were probed by a monoenergetic positron beam. Doppler broadening profiles of the annihilation radiation were…”
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Annealing properties of defects in B+- and F+-implanted Si studied using monoenergetic positron beams by UEDONO, A, KITANO, J, HAMADA, K, MORIYA, T, KAWANO, T, TANIGAWA, S. F, SUZUKI, R, OHDAIRA, T, MIKADO, T

“…Annealing properties of defects in F + - and B + -implanted Si were studied using monoenergetic positron beams. For F + -implanted specimen with a dose of 2×10…”
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Application of a Slow Positron Beam to the PdGe Ohmic Contact on GaAs by Lee, Jong-Lam, Tanigawa, Shoichiro

“…The depth distributions of Ga vacancies in the PdGe ohmic contact on GaAs were studied by a slow positron beam technique. The results were compared with the…”
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Investigation of Positron Moderator Materials for Electron-Linac-Based Slow Positron Beamlines by Suzuki, Ryoichi, Ohdaira, Toshiyuki, Uedono, Akira, Cho, Yang Koo, Yoshida, Sadafumi, Ishida, Yuuki, Ohshima, Takeshi, Itoh, Hisayoshi, Chiwaki, Mitsukuni, Mikado, Tomohisa, Yamazaki, Tetsuo, Tanigawa, Shoichiro

“…Positron re-emission properties were studied on moderator materials in order to improve the positron moderation system of electron-linac-based intense slow…”
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Defects and Their Annealing Properties in B + -Implanted Hg 0.78 Cd 0.22 Te Studied by Positron Annihilation by Akira Uedono, Akira Uedono, Hiroji Ebe, Hiroji Ebe, Masahiro Tanaka, Masahiro Tanaka, Shoichiro Tanigawa, Shoichiro Tanigawa, Kosaku Yamamoto, Kosaku Yamamoto, Yoshihiro Miyamoto, Yoshihiro Miyamoto

“…Defects and their annealing properties in B + -implanted Hg 0.78 Cd 0.22 Te ( p -type) were studied using the positron annihilation technique. For an…”
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Defects in Ion Implanted Hg 0.78 Cd 0.22 Te Probed by Monoenergetic Positron Beams by Akira Uedono, Akira Uedono, Hiroji Ebe, Hiroji Ebe, Masahiro Tanaka, Masahiro Tanaka, Ryoichi Suzuki, Ryoichi Suzuki, Toshiyuki Ohdaira, Toshiyuki Ohdaira, Shoichiro Tanigawa, Shoichiro Tanigawa, Tomohisa Mikado, Tomohisa Mikado, Kosaku Yamamoto, Kosaku Yamamoto, Yoshihiro Miyamoto, Yoshihiro Miyamoto

“…Defects and their annealing properties in ion implanted Hg 0.78 Cd 0.22 Te were studied using monoenergetic positron beams. Vacancy-type defects introduced by…”
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Vacancy-type defects in Be-implanted InP by LONG WEI, TANIGAWA, S, UEDONO, A, WADA, K, NAKANISHI, H

“…Vacancy-type defects generated by the ion implantation of 60 keV Be + ions in InP have been investigated by a slow positron beam technique. The vacancy-type…”
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Positron annihilation in Germanium in thermal equilibrium at high temperature by UEDONO, A, MORIYA, T, KOMURO, N, KAWANO, T, TANIGAWA, S, IKARI, A

“…Annihilation characteristics of positrons in Ge in thermal equilibrium at high temperature were studied using a monoenergetic positron beam. Precise…”
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Oxygen-Related Defects Introduced by As + -Implantation through Cap Layers in Si Probed by Monoenergetic Positron Beams by Uedono, Akira, Muramatsu, Makoto, Ubukata, Tomohiro, Tanino, Hirotoshi, Tanigawa, Shoichiro, Nakano, Akihiko, Yamamoto, Hidekazu, Suzuki, Ryoichi, Ohdaira, Toshiyuki, Mikado, Tomohisa

“…The depth distributions and species of defects in 50 keV As + -implanted Si with a cap layer (SiO 2 or SiN) were determined from measurements of the Doppler…”
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Annealing properties of defects in ion-implanted 3C-SiC studied using monoenergetic positron beams by UEDONO, A, ITOH, H, OKUMURA, H, YOSHIDA, S, OHSHIMA, T, SUZUKI, R, OHDAIRA, T, TANIGAWA, S, AOKI, Y, YOSHIKAWA, M, NASHIYAMA, I, MIKADO, T

“…Annealing properties of defects in N 2 + - or Al + -implanted 3C-SiC were studied using monoenergetic positron beams. For as-implanted specimens, the mean size…”
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A study of vacancy-type defects in B+-implanted SiO2/Si by a slow positron beam by UEDONO, A, TANIGAWA, S, SUGIURA, J, OGASAWARA, M

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