Search Results - "Tang, W.M"

Mechanical properties and in vitro response of strontium-containing hydroxyapatite/polyetheretherketone composites by Wong, K.L, Wong, C.T, Liu, W.C, Pan, H.B, Fong, M.K, Lam, W.M, Cheung, W.L, Tang, W.M, Chiu, K.Y, Luk, K.D.K, Lu, W.W

“…Abstract Strontium-containing hydroxyapatite/polyetheretherketone (Sr-HA/PEEK) composites were developed as alternative materials for load-bearing orthopaedic…”
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Effects of UV-ozone treatment on radio-frequency magnetron sputtered ZnO thin films by Tang, W.M., Greiner, M.T., Lu, Z.H., Ng, W.T., Nam, H.G.

“…The effects of UV-ozone treatment on ZnO thin films prepared by using radio-frequency magnetron sputtering are investigated. Decrease in the density of oxygen…”
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Comparison of initial value and eigenvalue codes for kinetic toroidal plasma instabilities by Kotschenreuther, Mike, Rewoldt, G., Tang, W.M.

“…In plasma physics, linear instability calculations can be implemented either as initial value calculations or as eigenvalue calculations. Here, comparisons…”
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Structural evolution and grain growth kinetics of the Fe–28Al elemental powder during mechanical alloying and annealing by Tang, W.M., Zheng, Z.X., Tang, H.J., Ren, R., Wu, Y.C.

“…The structural evolution and grain growth kinetics of the Fe–28Al (28 at.%) elemental powder during mechanical alloying and annealing were studied. Moreover,…”
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How Precise is the Determination of Rotational Alignment of the Femoral Prosthesis in Total Knee Arthroplasty by Yau, W.P., MBBS, FRCSE, FHKCOS, Chiu, K.Y., MBBS, FRCSE, FHKCOS, Tang, W.M., MBBS, FRCSE, FHKCOS

“…Abstract Correct rotation of the femoral component is critical in avoiding patellar instability in total knee arthroplasty. This study attempted to compare the…”
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Control of the interface reaction between silicon carbide and iron by Tang, W.M, Zheng, Z.X, Ding, H.F, Jin, Z.H

“…Two methods of the oxidation of silicon carbide (SiC) and alloying the Fe matrix with Cr had been investigated to control the interface reaction between SiC…”
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Structural evolutions of mechanically alloyed and heat treated Ti50C50 and Ti33B67 powders by Tang, W.M., Zheng, Z.X., Wu, W.C., Lü, J., Liu, J.W., Wang, J.M.

“…The TiC and TiB2 powders were successfully synthesized by ball milling the Ti50C50 and Ti33B67 elemental powders, respectively. During ball milling the Ti50C50…”
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Four X-chromosomal STRs and their allele frequencies in a Chinese population by Tang, W.M., To, K.Y.

“…X-chromosomal markers are particularly useful for solving complex problems relating to kinship and deficiency paternity analysis. In the present study,…”
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Intraobserver Errors in Obtaining Visually Selected Anatomic Landmarks During Registration Process in Nonimage-based Navigation-assisted Total Knee Arthroplasty by Yau, W.P., Leung, Anthony, Chiu, K.Y., Tang, W.M., Ng, T.P.

“…This study investigated the intraobserver errors in obtaining visually selected anatomic landmarks that were used in registration process in a nonimage-based…”
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A study of the solid state reaction between silicon carbide and iron by Tang, W.M., Zheng, Z.X., Ding, H.F., Jin, Z.H.

“…The solid state reaction between SiC and Fe annealed in an Ar–20 vol.% H 2 atmosphere in the temperature range from 1073 to 1373 K for times from 0.5 to 40 h…”
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Low-Threshold pentacene OTFT by using NdTaON gate dielectric and ITO gate electrode by Ma, Y.X., Huang, X.D., Lai, P.T., Tang, W.M.

“…[Display omitted] •Ta-doped Nd oxide is adopted as gate dielectric for OTFTs with high carrier mobility.•Low threshold voltage owes to high-k dielectric, ITO…”
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Dependence of sensing performance of OTFT-based H2 sensor on channel length by Li, Bochang, Lai, P.T., Tang, W.M.

“…For a hydrogen sensor based on organic thin-film transistor (OTFT) with palladium (Pd) source/drain (S/D) electrodes as the sensing medium, the effects of…”
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Plasmon-phonon resonance at gate-electrode/gate-dielectric interface on carrier mobility of organic TFTs with high-k gate dielectrics by Ma, Y.X ., Su, H., Tang, W.M., Lai, P.T.

“…[Display omitted] •Plasmon-phonon resonance is experimentally demonstrated in thin-film transistors.•It is observed for transistors with 2 different…”
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Determination of optimal insulator thickness for MISiC hydrogen sensors by Xu, J.P., Lai, P.T., Han, B., Tang, W.M.

“…Response mechanisms of hydrogen sensor based on a metal–insulator–SiC (MISiC) Schottky-barrier diode are analyzed. A physical model is established for the…”
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Conjoining congestion speed-cycle patterns and deep learning neural network for short-term traffic speed forecasting by Tang, W.M., Yiu, K.F.C., Chan, K.Y., Zhang, K.

“…Forecasting accurate traffic conditions is essential to regional traffic management. Since congestions are usually caused by regular activities, capturing…”
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A comparative study of Hf and Ta incorporations in the dielectric of Pd-WO3-SiC Schottky-diode hydrogen sensor by Liu, Y., Tang, W.M., Lai, P.T.

“…An investigation on the incorporation of two different kinds of high-κ dielectrics (HfO2 and Ta2O5) in the dielectric of Pd-WO3-SiC Schottky diode is…”
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Effects of source/drain-electrode material, thickness and fabrication method on the electrical performance of pentacene thin-film transistor by Li, Bochang, Han, C.Y., Lai, P.T., Tang, W.M.

“…The effects of source/drain (S/D) electrode material (Ni, Pt and Pd) and deposition method (electron-beam evaporation and sputtering) on the performance of…”
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Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH3-plasma treated yittrium-oxynitride as interfacial passivation layer by Lu, H.H., Xu, J.P., Liu, L., Wang, L.S., Lai, P.T., Tang, W.M.

“…The interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with yittrium-oxynitride interfacial passivation layer treated by…”
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Effects of N 2-annealing conditions on the sensing properties of Pt/HfO 2/SiC Schottky-diode hydrogen sensor by Tang, W.M., Leung, C.H., Lai, P.T.

“…Hafnium oxide (HfO 2) used as the gate insulator of metal-insulator-SiC Schottky-diode hydrogen sensors is annealed in nitrogen at different temperatures and…”
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A 2-D analytical threshold-voltage model for GeOI/GeON MOSFET with high-k gate dielectric by Ji, Feng, Xu, J.P., Liu, L., Tang, W.M., Lai, P.T.

“…A 2-D analytical threshold-voltage model for ultra-thin-body MOSFET with buried insulator and high-k gate dielectric is established by solving the 2-D…”
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