Search Results - "Taneja, Deepyanti"
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Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers
Published in Nature communications (24-06-2020)“…Electrostatic gating of two-dimensional (2D) materials with ionic liquids (ILs), leading to the accumulation of high surface charge carrier densities, has been…”
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Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor
Published in Crystals (Basel) (01-08-2018)“…Atomically thin molybdenum disulfide (MoS2), a member of the transition metal dichalcogenide (TMDC) family, has emerged as the prototypical two-dimensional…”
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Author Correction: Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers
Published in Nature communications (12-05-2021)Get full text
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Disassembling Silicene from Native Substrate and Transferring onto an Arbitrary Target Substrate
Published in Advanced functional materials (01-10-2020)“…Here, two novel approaches for disassembling epitaxial silicene from the native substrate and transferring onto arbitrary target substrates are presented. From…”
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Atomic Electrostatic Maps of Point Defects in MoS2
Published in Nano letters (22-12-2021)“…In this study, we use differential phase contrast images obtained by scanning transmission electron microscopy combined with computer simulations to map the…”
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Atomic Electrostatic Maps of Point Defects in MoS 2
Published in Nano letters (22-12-2021)“…In this study, we use differential phase contrast images obtained by scanning transmission electron microscopy combined with computer simulations to map the…”
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A complete laboratory for transport studies of electron-hole interactions in GaAs/AlGaAs ambipolar bilayers
Published in Applied physics letters (13-02-2017)“…We present GaAs/AlGaAs double quantum well devices that can operate as both electron-hole (e-h) and hole-hole (h-h) bilayers, with separating barriers as…”
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A complete laboratory for transport studies of electron-hole interactions inGaAs/AlGaAs ambipolar bilayers
Published in Applied physics letters (13-02-2017)“…We present GaAs/AlGaAs double quantum well devices that can operate as both electron-hole(e-h) and hole-hole (h-h) bilayers, with separating barriers as narrow…”
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A complete laboratory for transport studies of electron-hole interactions in GaAs/AlGaAs systems
Published 27-11-2016“…We present GaAs/AlGaAs double quantum well devices that can operate as both electron-hole (e-h) and hole-hole (h-h) bilayers, with separating barriers as…”
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