Search Results - "Tan Juan Boon"
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3D Geometric Engineering of the Double Wedge-Like Electrodes for Filament-Type RRAM Device Performance Improvement
Published in IEEE access (2020)“…The resistive switching variability and reliability degradation are the two major challenges that hinder the high-volume production of the Resistive Random…”
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2
HfOx-Based RRAM Device With Sandwich-Like Electrode for Thermal Budget Requirement
Published in IEEE transactions on electron devices (01-10-2020)“…The thermal budget of the standard integrated circuits (ICs) manufacturing process is one of the key considerations in the development of resistive random…”
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3
Underfill selection methodology for fine pitch Cu/low-k FCBGA packages
Published in Microelectronics and reliability (01-02-2009)“…A systematic underfill selection approach has been presented to characterize and identify suitable underfill encapsulants for large size flip chip ball grid…”
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4
Investigation of Electrical Noise Signal Triggered Resistive Switching and Its Implications
Published in IEEE transactions on electron devices (01-10-2020)“…In this article, the electrical noise signal triggered switching of resistive random access memory (RRAM) device is investigated. As noise is also generated…”
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5
HfO x -Based RRAM Device With Sandwich-Like Electrode for Thermal Budget Requirement
Published in IEEE transactions on electron devices (01-10-2020)Get full text
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6
Design, assembly and reliability of large die and fine-pitch Cu/low- k flip chip package
Published in Microelectronics and reliability (01-07-2010)“…This paper reports the design, assembly and reliability assessment of 21 × 21 mm 2 Cu/low- k flip chip (65 nm node) with 150 μm bump pitch and high bump…”
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Underfill Selection, Characterization, and Reliability Study for Fine-Pitch, Large Die Cu/Low-K Flip Chip Package
Published in IEEE transactions on components, packaging, and manufacturing technology (2011) (01-03-2011)“…This paper presents a systematic underfill selection and characterization methods for 21 ×21 mm 2 Cu/low-K flip chip packages (65 nm technology) with 150 μm…”
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8
Wafer level microarcing model in 90nm chemical-vapor deposition low-k via etch on 300mm silicon-on-insulator substrate
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-07-2006)“…In SiOCH (C-doped SiO2) via etch application, high polymer deposition chemistry is needed for better selectivity to both photoresist and underlying barrier…”
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9
Investigation and Failure Analysis of "Flower-like" Defects on Microchip Aluminum Bondpads in Wafer Fabrication
Published in 2006 IEEE International Conference on Semiconductor Electronics (01-11-2006)“…In this paper, Al fluoride defects on microchip Al bondpads were studied, which were confirmed to be due to a 12 hours delay prior to NE111 clean process…”
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Conference Proceeding -
10
Enhanced resistive switching characteristics of conductive bridging memory device by a Co–Cu alloy electrode
Published in Applied physics letters (25-09-2023)“…One of the main challenges in the development of conductive bridging random access memory (CBRAM) is the large stochastic nature of ion movement that…”
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11
2.5D packaging solution - From concept to platform qualification
Published in 2015 IEEE 17th Electronics Packaging and Technology Conference (EPTC) (01-12-2015)“…Silicon interposers offer a viable path to perpetuating the trend of increased chip performance per die area, as projected by Moore's law, which can no longer…”
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12
A thermo mechanical finite element modeling approach to solving stress induced passivation failures
Published in 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (01-07-2016)“…Multi-layered systems are susceptible to cracking and or delamination upon temperature cycling. Passivation integrity test (PIT) is widely leveraged to assess…”
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13
Integration challenges of low temperature BEOL interconnects
Published in 2017 IEEE International Interconnect Technology Conference (IITC) (01-05-2017)“…We present the first exploratory low temperature, lower than standard back-end-of-line (BEOL) interconnects temperature in CMOS. The approach poses several…”
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14
Insights on Inter-metal Reliability Assessment of High Voltage Interconnects
Published in 2022 IEEE International Reliability Physics Symposium (IRPS) (01-03-2022)“…Reliability qualification of HV interconnects is more complicated due to the additional inter-metal impact under high voltage operation. Typically, this is…”
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Conference Proceeding -
15
Impact of pattern density on copper interconnects barrier metal liner integrity
Published in IEEE International Interconnect Technology Conference (01-05-2014)“…The dependency of Cu interconnects barrier metal liner integrity due to neighboring pattern density is presented in this paper. It was found that TaN/Ta…”
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16
Foundry RF technologies
Published in Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) (01-04-2014)“…Landscape of semiconductor technologies and manufacturing has been changing in general and RF technologies in specific from IDMs to foundries and from exotic…”
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17
Foundry TSV integration and manufacturing challenges
Published in IEEE International Interconnect Technology Conference (01-05-2014)“…Foundry integration and manufacturing challenges for 2.5D TSV technology are discussed, with focus on in-line defectivity and warpage control. The major defect…”
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Effects of side reservoirs on the electromigration lifetime of copper interconnects
Published in 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (01-07-2011)“…A new side reservoir test structure is shown to have improved electromigration reliability over conventional end-of-line reservoir structures. This is believed…”
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Fine pitch copper wire bonding on 45nm tech Cu/low-k chip with different bond pad metallurgy
Published in 2011 IEEE 13th Electronics Packaging Technology Conference (01-12-2011)“…Wire bonding technology has been widely used in the semiconductor industry for interconnection between device and substrate. Gold wire has been used in…”
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20
EELS chemical bond characterization of process induced damages in low-k dielectric films
Published in 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (01-07-2012)“…EELS chemical bond analysis has been used to characterize etching process induced plasma damages in low-k SiCOH materials. EELS can provide not only the…”
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