Search Results - "Tan Chan Lik"

Improved Deep Body Implant on Breakdown Voltage in Super Junction of Vertical VDMOS by Tan Chan Lik, Strasser, Marc

“…In this paper, we demonstrate a new technique to improve the breakdown voltage of a vertical n-channel power transistor (VDMOS) by increasing the energy of its…”
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The effect of H3PO4 processing on LDMOS gate oxide integrity in PolySilicon buffered LOCOS by Lik, Tan Chan

“…The objective of this work is to investigate gate oxide degradation in Lateral Double Diffused metal-oxide semiconductor (LDMOS) devices associated with…”
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Current Gain Reduction in Bipolar Junction Transistors Induced by Carbon Contamination from H3PO4-Based Etchant by Lik, Tan Chan, Ning, Lim Chui, Wai, Wan Tatt, Johan, Norjuliani, Zakaria, Zafirah, Cheong, Kuan Yew

“…A new mechanism contributed to current gain reduction in Bipolar Junction Transistors that was caused by contamination of H 3 PO 4 during silicon nitride…”
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A study of fluorine dose and implant energy to the NBTI upon p+ implant sequence by Md Saad, Siti Zubaidah, Tan Chan Lik, Herman, Sukreen Hana

“…Negative Bias Temperature Instability (NBTI) is one of the major issues related to p-channel metal-oxide-semiconductor (PMOS) reliability that has been…”
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A new method on Cu stress measurement by bandgap voltage reference circuit by Tan Chan Lik, Tan Chun Keat, Thilaga, Govindasamy, Cheng Chin Siong

“…Cu metallization is not only used in low power logic circuit but also in high power automotive application because of its low resistance and robustness in…”
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An improved P+/N diode leakage current in BiCMOS technologies with fluorine co-implant by Saad, S. Z. M., Tan Chan Lik, Othman, M. A., Holger, P., Herman, S. H.

“…Fluorine (F) is a co-implant species known to have numbers of beneficial effects to the semiconductor device. In this study, we demonstrate the effect of…”
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A study of deep body implant into the base of Vertical NPN bipolar transistors by Chan Lik Tan, Cheng Chin Siong, Reza, Hussein Mohammad, Hwang Chee Siang

“…In this paper, we demonstrate the sensitivity of base resistance by different tilt angle of deep body implant into the base of Vertical NPN bipolar…”
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Characterization of SOI Film Thickness, Oxide Thickness and Charges with C-V Measurement by Joseph, Ke Kian Seng, Lik, Tan Chan, Huat, Niew Soon

“…Capacitance-Voltage measurement is a crucial method to characterize and study the behavior of the device. In this work, the capacitance voltage characteristics…”
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A study of fluorine implant in the formation of low leakage P+/N junction in BiCMOS technologies by Saad, Siti Zubaidah Md, Lik, T. C., Othman, M. A., Holger, P., Herman, S. H.

“…As device and technologies gets shrink, ion implantation becomes very critical and important process. Fluorine is one of the dopant that is widely been studied…”
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