Search Results - "Tan, Teh Y."

Transition region width of nanowire hetero- and pn-junctions grown using vapor–liquid–solid processes by Li, Na, Tan, Teh Y., Gösele, U.

“…The transition region width of nanowire heterojunctions and pn-junctions grown using vapor–liquid–solid (VLS) processes has been modeled. With two constituents…”
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Co-precipitation of carbon and oxygen in silicon : the dominant flux criterion by TAYLOR, W. J, GÖSELE, U. M, TAN, T. Y

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Is there a thermodynamic size limit of nanowires grown by the vapor-liquid-solid process? by Tan, Teh Y., Li, Na, Gösele, Ulrich

“…For nanowires grown by the vapor-liquid-solid (VLS) process, expressions of the thermodynamically allowed minimum sizes of the wire and the liquid droplet are…”
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Crystallization of Amorphous SiO2 Microtubes Catalyzed by Lithium by Zhao, L., Li, N., Langner, A., Steinhart, M., Tan, T. Y., Pippel, E., Hofmeister, H., Tu, K.-N., Gösele, U.

“…Amorphous silica formed by thermally oxidizing silicon is commonly eligible for lithographic patterning or can be grown on patterned substrates. However, it is…”
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Extended high temperature Al gettering for improvement and homogenization of minority carrier diffusion lengths in multicrystalline Si by Joshi, Subhash M, Gösele, Ulrich M, Tan, Teh Y

“…Multicrystalline Si for photovoltaic applications is a very inhomogeneous material with localized regions of high dislocation density and large impurity and…”
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Point defects and diffusion mechanisms pertinent to the Ga sublattice of GaAs by Tan, Teh Y.

“…For the Ga sublattice of GaAs, the recent understanding of the impurity and self-diffusion mechanisms and the nature of the point defects responsible are…”
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Sulfur diffusion and the interstitial contribution to arsenic self-diffusion in GaAs by Uematsu, Masashi, Werner, Peter, Schultz, Matthias, Tan, Teh Y., Gösele, Ulrich M.

“…A quantitative determination of the contribution of As self-interstitials to the As self-diffusion coefficient in GaAs has been carried out. Values of the As…”
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