Search Results - "Tan, Swee‐Tiam"

Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers by Zhang, Zi-Hui, Liu, Wei, Ju, Zhengang, Tiam Tan, Swee, Ji, Yun, Kyaw, Zabu, Zhang, Xueliang, Wang, Liancheng, Wei Sun, Xiao, Volkan Demir, Hilmi

“…InGaN/GaN light-emitting diodes (LEDs) grown along the polar orientations significantly suffer from the quantum confined Stark effect (QCSE) caused by the…”
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High-efficiency and low-loss gallium nitride dielectric metasurfaces for nanophotonics at visible wavelengths by Emani, Naresh Kumar, Khaidarov, Egor, Paniagua-Domínguez, Ramón, Fu, Yuan Hsing, Valuckas, Vytautas, Lu, Shunpeng, Zhang, Xueliang, Tan, Swee Tiam, Demir, Hilmi Volkan, Kuznetsov, Arseniy I.

“…The dielectric nanophotonics research community is currently exploring transparent material platforms (e.g., TiO2, Si3N4, and GaP) to realize compact high…”
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Bandgap-Engineered Ga-Rich GaZnO Thin Films for UV Transparent Electronics by Zhao, Junliang, Sun, Xiao Wei, Tan, Swee Tiam

“…Ga-rich GaZnO thin films were prepared by metal-organic chemical vapor deposition. The optical bandgap of GaZnO films can be engineered from 3.3 to 4.9 eV by…”
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A hole accelerator for InGaN/GaN light-emitting diodes by Zhang, Zi-Hui, Liu, Wei, Tan, Swee Tiam, Ji, Yun, Wang, Liancheng, Zhu, Binbin, Zhang, Yiping, Lu, Shunpeng, Zhang, Xueliang, Hasanov, Namig, Sun, Xiao Wei, Demir, Hilmi Volkan

“…The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the…”
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Augmenting Light‐to‐Heat Conversion Through 3D Scalable Palm Fiber for Energy Efficient Photothermal Solar Steam Generation by Lim, Kok‐Loong, Liow, Jo‐Ey, Ong, Wee‐Jun, Khiew, Poi Sim, Jani, Nur Aimi, Chiu, Wee Siong, Tan, Swee‐Tiam, Haw, Choon‐Yian

“…Tackling water scarcity is a pressing challenge, propelling recent advancements in solar steam generation (SSG). Recently, 3D photoabsorbers have outperformed…”
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Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency by Zhang, Zi-Hui, Liu, Wei, Ju, Zhengang, Tiam Tan, Swee, Ji, Yun, Zhang, Xueliang, Wang, Liancheng, Kyaw, Zabu, Wei Sun, Xiao, Volkan Demir, Hilmi

“…InGaN/GaN light-emitting diodes (LEDs) grown along the [0001] orientation inherit very strong polarization induced electric fields. This results in a reduced…”
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On the origin of the electron blocking effect by an n -type AlGaN electron blocking layer by Zhang, Zi-Hui, Ji, Yun, Liu, Wei, Tiam Tan, Swee, Kyaw, Zabu, Ju, Zhengang, Zhang, Xueliang, Hasanov, Namig, Lu, Shunpeng, Zhang, Yiping, Zhu, Binbin, Wei Sun, Xiao, Volkan Demir, Hilmi

“…In this work, the origin of electron blocking effect of n-type Al0.25Ga0.75N electron blocking layer (EBL) for c+ InGaN/GaN light-emitting diodes has been…”
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A hole modulator for InGaN/GaN light-emitting diodes by Zhang, Zi-Hui, Kyaw, Zabu, Liu, Wei, Ji, Yun, Wang, Liancheng, Tan, Swee Tiam, Sun, Xiao Wei, Demir, Hilmi Volkan

“…The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole…”
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Light Generation in Lead Halide Perovskite Nanocrystals: LEDs, Color Converters, Lasers, and Other Applications by Yan, Fei, Tan, Swee Tiam, Li, Xiao, Demir, Hilmi Volkan

“…Facile solution processing lead halide perovskite nanocrystals (LHP‐NCs) exhibit superior properties in light generation, including a wide color gamut, a high…”
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Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes by Kyaw, Zabu, Zhang, Zi-Hui, Liu, Wei, Tiam Tan, Swee, Gang Ju, Zhen, Liang Zhang, Xue, Ji, Yun, Hasanov, Namig, Zhu, Binbin, Lu, Shunpeng, Zhang, Yiping, Hua Teng, Jing, Xiao Wei, Sun, Volkan Demir, Hilmi

“…A three-step graded undoped-InGaN layers embedded between the GaN last quantum barrier layer and the p-AlGaN electron blocking layer was proposed and its…”
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Highly Efficient Visible Colloidal Lead-Halide Perovskite Nanocrystal Light-Emitting Diodes by Yan, Fei, Xing, Jun, Xing, Guichuan, Quan, Lina, Tan, Swee Tiam, Zhao, Jiaxin, Su, Rui, Zhang, Lulu, Chen, Shi, Zhao, Yawen, Huan, Alfred, Sargent, Edward H, Xiong, Qihua, Demir, Hilmi Volkan

“…Lead-halide perovskites have been attracting attention for potential use in solid-state lighting. Following the footsteps of solar cells, the field of…”
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Highly Flexible, Electrically Driven, Top-Emitting, Quantum Dot Light-Emitting Stickers by Yang, Xuyong, Mutlugun, Evren, Dang, Cuong, Dev, Kapil, Gao, Yuan, Tan, Swee Tiam, Sun, Xiao Wei, Demir, Hilmi Volkan

“…Flexible information displays are key elements in future optoelectronic devices. Quantum dot light-emitting diodes (QLEDs) with advantages in color quality,…”
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High brightness formamidinium lead bromide perovskite nanocrystal light emitting devices by Perumal, Ajay, Shendre, Sushant, Li, Mingjie, Tay, Yong Kang Eugene, Sharma, Vijay Kumar, Chen, Shi, Wei, Zhanhua, Liu, Qing, Gao, Yuan, Buenconsejo, Pio John S., Tan, Swee Tiam, Gan, Chee Lip, Xiong, Qihua, Sum, Tze Chien, Demir, Hilmi Volkan

“…Formamidinium lead halide (FAPbX 3 ) has attracted greater attention and is more prominent recently in photovoltaic devices due to its broad absorption and…”
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MoS2 functionalized AlGaN/GaN transistor based room temperature NO2 gas sensor by Sharma, Nipun, Kumar, Sumit, Gupta, Ankur, Dolmanan, Surani Bin, Patil, Dharmraj Subhash Kotekar, Tan, Swee Tiam, Tripathy, Sudhiranjan, Kumar, Mahesh

“…The ability to monitor toxic gases under room-temperature conditions, with enhanced response and selectivity present in the atmosphere, is still considered as…”
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InGaN/GaN light-emitting diode with a polarization tunnel junction by Zhang, Zi-Hui, Tiam Tan, Swee, Kyaw, Zabu, Ji, Yun, Liu, Wei, Ju, Zhengang, Hasanov, Namig, Wei Sun, Xiao, Volkan Demir, Hilmi

“…We report InGaN/GaN light-emitting diodes (LED) comprising in situ integrated p+-GaN/InGaN/n+-GaN polarization tunnel junctions. Improved current spreading and…”
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Solution Processed Tungsten Oxide Interfacial Layer for Efficient Hole-Injection in Quantum Dot Light-Emitting Diodes by Yang, Xuyong, Mutlugun, Evren, Zhao, Yongbiao, Gao, Yuan, Leck, Kheng Swee, Ma, Yanyan, Ke, Lin, Tan, Swee Tiam, Demir, Hilmi Volkan, Sun, Xiao Wei

“…A highly efficient and stable QLED using an inorganic WO3 nanoparticle film as a hole injection layer is demonstrated.The resulting WO3 nanoparticle‐based…”
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A bright cadmium-free, hybrid organic/quantum dot white light-emitting diode by Yang, Xuyong, Divayana, Yoga, Zhao, Dewei, Swee Leck, Kheng, Lu, Fen, Tiam Tan, Swee, Putu Abiyasa, Agus, Zhao, Yongbiao, Volkan Demir, Hilmi, Wei Sun, Xiao

“…We report a bright cadmium-free, InP-based quantum dot light-emitting diode (QD-LED) with efficient green emission. A maximum brightness close to 700 cd/m2…”
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Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes by Zhang, Yiping, Zhang, Zi-Hui, Tan, Swee Tiam, Hernandez-Martinez, Pedro Ludwig, Zhu, Binbin, Lu, Shunpeng, Kang, Xue Jun, Sun, Xiao Wei, Demir, Hilmi Volkan

“…Due to the limitation of the hole injection, p-type doping is essential to improve the performance of InGaN/GaN multiple quantum well light-emitting diodes…”
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Structure and optical properties of La-doped ZnO thin films at room temperature by Sugihartono Iwan, Soegijono Bambang, Handoko Erfan, Tiam Tan Swee, Umar Akrajas Ali

“…La-doped ZnO (with 0, 1, 5 and 7 wt.% La) thin films were deposited on Si substrates by ultrasonic spray pyrolysis, using frequency of 1.7MHz, and heated at…”
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Editorial: Advanced Nanomaterials for Light-Emitting Diodes and Solar Cells by Liu, Baiquan, Xue, Qifan, Yang, Xuyong, Tan, Swee Tiam

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