Search Results - "Tan, J.B."

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  1. 1

    Ultraprecision 3D probing system based on spherical capacitive plate by Tan, J.B., Cui, J.N.

    Published in Sensors and actuators. A. Physical. (01-04-2010)
    “…In order to make ultraprecision dimensional and profile measurement of small structures with large aspect ratio possible, a 3D probing system based on a…”
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    Journal Article
  2. 2

    Deformation behaviors of Cu bicrystals with an inclined twin boundary at multiple scales by Li, L.L., Zhang, Z.J., Zhang, P., Tan, J., Yang, J.B., Zhang, Z.F.

    Published in Journal of materials science & technology (01-07-2017)
    “…Cu bicrystals of different sizes with a sole twin boundary(TB) inclined at 45?with respect to the loading direction were deformed under unidirectional and…”
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    Journal Article
  3. 3

    Comparison of attitudes between Generation X and Baby Boomer veterinary faculty and residents by Freeman, Lisa M, Trower, Cathy A, Tan, Rachael J B, Terkla, Dawn Geronimo

    Published in Journal of veterinary medical education (01-01-2009)
    “…Understanding the characteristics and preferences of the different generations in the veterinary workforce is important if we are to help optimize current and…”
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    Journal Article
  4. 4

    ChatGPT for assessment writing by Zuckerman, Matthew, Flood, Ryan, Tan, Rachael J B, Kelp, Nicole, Ecker, David J, Menke, Jonathan, Lockspeiser, Tai

    Published in Medical teacher (01-11-2023)
    “…Medical schools invest significant resources into the creation of multiple-choice items for assessments. This process is costly and requires faculty training…”
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    Journal Article
  5. 5

    SSEST: A new approach to higher accuracy cylindricity measuring instrument by Zhao, W.Q., Xue, Z., Tan, J.B., Wang, Z.B.

    “…The spatial rotation error of a cylindricity measuring instrument (CMI) spindle is one of the biggest obstacles to further improvement of CMI accuracy, and in…”
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    Journal Article
  6. 6

    Replication of micro optical element with continuous relief profile in fused silica using UV-embossing and Reactive Ion Etching by Jin, P., Liu, N., Liu, T.T., Tan, J.B.

    Published in Microelectronic engineering (01-05-2010)
    “…In order to replicate micro optical element with continuous relief profile into fused silica, UV-embossing and Reactive Ion Etching process were used. Micro…”
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    Journal Article Conference Proceeding
  7. 7

    Wafer level microarcing model in 90 nm chemical-vapor deposition low- k via etch on 300 mm silicon-on-insulator substrate by Cong, Hai, Low, Chun Hui, Pradeep, Yelehanka Ramachandramurthy, Zhang, Xin, Chandima, Perera, Liu, Wu Ping, Tan, Juan Boon, Hsia, Liang Choo

    “…In SiOCH (C-doped Si O 2 ) via etch application, high polymer deposition chemistry is needed for better selectivity to both photoresist and underlying barrier…”
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    Journal Article
  8. 8

    Optimization of the Thermomechanical Reliability of a 65 nm Cu/Low-[Formula Omitted] Large-Die Flip Chip Package by Ong, J.M.G, Tay, A.A.O, Zhang, X, Kripesh, V, Lim, Y.K, Yeo, D, Chan, K.C, Tan, J.B, Hsia, L.C, Sohn, D.K

    “…[...] the low-k materials have lower modulus and poorer adhesion compared to the common dielectric materials. [...] thermomechanical failure is one of the…”
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    Journal Article
  9. 9

    Optimization of the Thermomechanical Reliability of a 65 nm Cu/Low- k Large-Die Flip Chip Package by Ong, J.M.G., Tay, A.A.O., Zhang, X., Kripesh, V., Lim, Y.K., Yeo, D., Chan, K.C., Tan, J.B., Hsia, L.C., Sohn, D.K.

    “…The trend toward finer pitch and higher performance integrated circuit devices has driven the semiconductor industry to incorporate copper and low-k dielectric…”
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    Journal Article
  10. 10

    Effect of chemical mechanical polishing scratch on TDDB reliability and its reduction in 45nm BEOL process by Liu, W., Lim, Y.K., Zhang, F., Zhang, W.Y., Chen, C.Q., Zhang, B.C., Tan, J.B., Sohn, D.K., Hsia, L.C.

    “…The correlation of time-dependent dielectric breakdown (TDDB) reliability failure with scratches generated from chemical mechanical polishing (CMP) in 45 nm…”
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    Conference Proceeding
  11. 11

    TDDB robustness of highly dense 65NM BEOL vertical natural capacitor with competitive area capacitance for RF and mixed-signal applications by Fischer, A.H., Lim, Y.K., Riess, P., Pompl, T., Zhang, B.C., Chua, E.C., Keller, W.W., Tan, J.B., Klee, V., Tan, Y.C., Souche, D., Sohn, D.K., von Glasow, A.

    “…The integration of vertical natural capacitors (VNCap) into existing backend-of-line (BEOL) stacks is an important aspect to enable radio-frequency and mixed…”
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    Conference Proceeding
  12. 12

    Design for Manufacturability and its Role in Enhancing Stress Migration Reliability of Porous Ultra Low-k Copper Interconnects by Lim, Y.K., Pey, K.L., Lee, P.S., Lee, Y.H., Kamat, N.R., Tan, J.B., Fu, T., Hsia, L.C.

    “…The integration of copper (Cu) and low-k dielectrics has posed challenges for stress migration (SM) reliability. Besides process tuning, design for…”
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    Conference Proceeding
  13. 13

    Polarisation contrast imaging of thin films in scanning microscopy by Shatalin, S.V, Tan, J.B, Juškaitis, R, Wilson, T

    Published in Optics communications (01-05-1995)
    “…We consider the form of the optical field in the exit pupil of a high numerical aperture microscope objective when the lens is focussed onto an isotropic thin…”
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    Journal Article
  14. 14

    A novel methodology to analyze time-dependent dielectric breakdown failure mechanism of copper/low-k interconnects by Tong, Y., Lim, Y.K., Chen, C.Q., Zhang, W.Y., Tan, J.B., Sohn, D.K., Hsia, L.C.

    “…A novel industry methodology has been developed to analyze TDDB reliability failure on Cu/low-k SiCOH interconnects. Initial breakdown point is at interface…”
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    Conference Proceeding
  15. 15

    The effects of dielectric slots on Copper/Low-k interconnects reliability by Heryanto, A., Lim, Y.K., Pey, K.L., Liu, W., Tan, J.B., Sohn, D.K., Hsia, L.C.

    “…The effects of dielectric slots on Cu/Low-k interconnects reliability were studied. Dielectric slots were proven to be effective in suppressing stress-induced…”
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    Conference Proceeding
  16. 16

    Development of slurry concentration adjustable tungsten chemical mechanical planarization process by Wang, X.B., Tan, J.B., Tan, P.S., Charles Lin, Zhao, H.J.

    “…Understanding the interaction of slurry component and concentration with polishing condition is necessary for developing a tightly controlled chemical…”
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    Conference Proceeding
  17. 17

    Effects of pulsed current on electromigration lifetime by Lim, M.K., Gan, C.L., Tan, T.L., Ee, Y.C., Ng, C.M., Zhang, B.C., Tan, J.B.

    “…Asymmetrical Cu interconnect structure, where one end of the metal-2 (M2) test line is connected to M1 while the opposite end is connected to M3, was subjected…”
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    Conference Proceeding
  18. 18

    Optimization of reliability of copper-low-k flip chip package with variable interconnect compliance by Ong, J.M.G., Tay, A.A.O., Zhang, X., Kripesh, V., Lim, Y.K., Tan, J.B., Sohn, D.K.

    “…The trend toward finer pitch and higher performance integrated circuits (ICs) devices has driven the semiconductor industry to incorporate copper and low-k…”
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    Conference Proceeding
  19. 19

    BEOL Advance Interconnect Technology Overview and Challenges by Liang Choo Hsia, Tan, J.B., Bei Chao Zhang, Wu Ping Liu, Yeow Kheng Lim, Dong Kyun Sohn

    “…An overview of the semiconductor roadmap of interconnects process transition from 0.13μm to 45nm using current proven state- of-the-art manufacturing…”
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    Conference Proceeding
  20. 20

    Design for Manufacturability in Backend Reliability and Packaging of Nanoscale Technologies by Lim, Y.K., Tan, J.B., Pey, K.L., Chua, E.C., Yeo, Y.H., Fu, T., Hsia, L.C.

    “…Integration of copper (Cu) and low-k dielectrics has posed significant challenges for device reliability and packaging. For faster and successful semiconductor…”
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    Conference Proceeding