Search Results - "Tambo, T."

Tuning the emission wavelength of Si nanocrystals in SiO2 by oxidation by Brongersma, M. L., Polman, A., Min, K. S., Boer, E., Tambo, T., Atwater, H. A.

“…Si nanocrystals (diameter 2–5 nm) were formed by 35 keV Si+ implantation at a fluence of 6×1016 Si/cm2 into a 100 nm thick thermally grown SiO2 film on Si…”
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Effect of AlSb buffer layer thickness on heteroepitaxial growth of InSb films on a Si(001) substrate by Mori, M., Murata, K., Fujimoto, N., Tatsuyama, C., Tambo, T.

“…Aluminum antimonide (AlSb) layers with various thickness ranged from about 8 to 250 nm were grown at 520 °C as the buffer layer for the heteroepitaxial growth…”
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Heteroepitaxial growth of rotated InSb films on a Si(1 1 1) substrate via 2×2-In surface reconstruction by Mori, M., Saito, M., Yamashita, Y., Nagashima, K., Hashimoto, M., Tatsuyama, C., Tambo, T.

“…The heteroepitaxial growth of InSb films via In-induced surface reconstructions such as 2×2-In and √3×√3-In on a Si(1 1 1) substrate was carried out by using a…”
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The structural deformations in the Si/SiGe system induced by thermal annealing by SHUQI ZHENG, MORI, M, TAMBO, T, TATSUYAMA, C

“…The structural deformations in Si/SiGe system during thermal annealing were investigated by means of atomic force microscope (AFM) and high-resolution X-ray…”
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Optical and structural characterization of CdSe and CdTe layers and fabrication of a CdTe/CdSe structure by Alam, S., Pathan, M.A.K., Siddiquee, K.A.M.H., Islam, A.B.M.O., Gafur, M.A., Saha, D.K., Mori, M., Tambo, T.

“…CdTe/CdSe heterojunction solar cell structure is fabricated using a simple, easy and low-cost electrodeposition method. To fabricate this solar cell structure,…”
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Low-temperature growth of InSb(1 1 1) on Si(1 1 1) substrate by Murata, K., Ahmad, N.B., Tamura, Y., Mori, M., Tatsuyama, C., Tambo, T.

“…Low-temperature growth of InSb films on Si(1 1 1) substrate was performed in an ultra-high vacuum chamber by coevaporation of elemental Indium and Antimony…”
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Interdiffusion at Si/SiGe interface analyzed by high-resolution X-ray diffraction by Zheng, Shuqi, Kawashima, M., Mori, M., Tambo, T., Tatsuyama, C.

“…The interdiffusion at Si/SiGe interface with Ge mole fraction of 19.2%, and SiGe layer thickness of 283 nm was studied by high-resolution X-ray diffraction…”
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Heteroepitaxial growth of InSb films on a Si(0 0 1) substrate via AlSb buffer layer by Mori, M., Akae, N., Uotani, K., Fujimoto, N., Tambo, T., Tatsuyama, C.

“…AlSb is a more suitable material as buffer layers for the heteroepitaxial growth of InSb films on a Si(0 0 1) substrate than Ge. It reduces the large lattice…”
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Heteroepitaxy of InSb films grown on a Si(0 0 1) substrate with AlSb buffer layer by Mori, M., Fujimoto, N., Akae, N., Uotani, K., Tambo, T., Tatsuyama, C.

“…The growth of InSb films on a Si(0 0 1) substrate with AlSb buffer layer was performed in an ultra high vacuum chamber (UHV) by a co-evaporation of elemental…”
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Sb adsorption onto In nanocluster array structure formed on a Si(1 1 1)–(7 × 7) by Saito, M., Takeuchi, C., Mori, M., Tambo, T., Tatsuyama, C.

“…The application of self organized growth method (magic clustering method) for the formation of new type of nanocluster is reported. Sb has been deposited onto…”
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Atomic H-mediated (Si14/Ge1)20 superlattice buffers for the growth of Si0.75Ge0.25 alloy layers with low residual strain by Rahman, M.M., Tambo, T., Tatsuyama, C.

“…We report on the growth of high-quality 2000-A -thick Si0.75Ge0.25 alloy layers using short-period (Si14/Ge1)20 superlattice (SSL) buffer with atomic H…”
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Surfactant mediated growth of Sb clusters on Si(1 1 1) surface by Gruznev, D.V., Ohmura, K., Saitoh, M., Tsukabayashi, S., Tambo, T., Lifshits, V.G., Tatsuyama, C.

“…Adsorption kinetics of Sb onto the Si(1 1 1) surface has been modified by incorporation of a Si(1 1 1)–In(√3×√3) surface phase (θ In = 1 3 ML) . In contrast to…”
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Surface structure evolution during Sb adsorption on Si(1 1 1)–In(4×1) reconstruction by Gruznev, D.V., Rao, B.V., Tambo, T., Tatsuyama, C.

“…The Sb adsorption process on the Si(1 1 1)–In(4×1) surface phase was studied in the temperature range 200–400 °C. The formation of a Si(1 1 1)–InSb (2×2)…”
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Atomic structure and formation process of the Si(1 1 1)–Sb(√7 × √7) surface phase by Gruznev, D., Rao, B.V., Furukawa, Y., Mori, M., Tambo, T., Lifshits, V.G., Tatsuyama, C.

“…During the study of Sb condensation on the Si(111)–In(√3×√3) surface phase we observed the formation of a new Sb-induced surface structure with (√7×√7) lattice…”
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Modification of Sb/Si(001) interface by incorporation of In(4 × 3) surface reconstruction by GRUZNEV, D, OHMURA, K, MORI, M, TAMBO, T, LIFSHITS, V, TATSUYAMA, C

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Study of epitaxial SrTiO3 (STO) thin films grown on Si(0 0 1)–2 × 1 substrates by molecular beam epitaxy by Bhuiyan, M.N.K., Matsuda, A., Yasumura, T., Tambo, T., Tatsuyama, C.

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Twinned InSb molecular layer on Si(1 1 1) substrate by RAO, B. V, GRUZNEV, D, MORI, M, TAMBO, T, TATSUYAMA, C

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Study of Sb adsorption on the Si(0 0 1)–In(4 × 3) surface by Gruznev, D, Furukawa, Y, Mori, M, Tambo, T, Lifshits, V.G, Tatsuyama, C

“…The process of Sb adsorption onto Si(0 0 1)–In(4×3) surface phase has been studied using scanning tunneling microscopy (STM), reflection high-energy electron…”
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Modification of Sb/Si(0 0 1) interface by incorporation of In(4 × 3) surface reconstruction by Gruznev, D.V., Ohmura, K., Mori, M., Tambo, T., Lifshits, V.G., Tatsuyama, C.

“…The formation of a Sb/Si(001) interface with artificial surface structure is achieved by Sb adsorption onto the In(4 × 3) surface phase at RT followed by…”
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Epitaxial growth of Bi2Sr2CuOx films onto Si(001) by molecular beam epitaxy by Tambo, T, Arakawa, T, Shimizu, A, Hori, S, Tatsuyama, C

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