Search Results - "Tamamushi, T."

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  1. 1

    A low-loss high-speed switching device: The 2500-V 300-A static induction thyristor by Nishizawa, J., Muraoka, K., Kawamura, Y., Tamamushi, T.

    Published in IEEE transactions on electron devices (01-04-1986)
    “…An anode-emitter shorted-type 2500-V 300-A buried-gate static induction (SI) thyristor was fabricated and resulted in a very-high-speed turn-on time of 2.0 µs…”
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    Journal Article
  2. 2

    Current-voltage characteristics and noise performance of a static induction transistor for video frequency by Tamamushi, T., Akiyama, T., Nishizawa, J.

    Published in IEEE transactions on electron devices (01-07-1988)
    “…The current-voltage characteristics and the noise properties of the triode-like-mode static induction transistor (SIT) have been examined to estimate the noise…”
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    Journal Article
  3. 3

    Spectral response of an SIT image sensor with an improved structure by Nishizawa, J., Tamamushi, T., Ushirozawa, M., Kim, J.H.

    Published in IEEE electron device letters (01-04-1990)
    “…A static-induction-transistor (SIT) image sensor with an n/sup +/ buried drain region is discussed. This region acts as a filter to eliminate the optical…”
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    Journal Article
  4. 4

    Functional integration of the light-triggered static induction thyristor and the static induction phototransistor by Nishizawa, J., Tamamushi, T., Nonaka, K.

    Published in IEEE electron device letters (01-04-1986)
    “…An integrated structure of the Light-Triggered and Light-Quenched Static Induction (LTQ SI) thyristor is introduced and is fabricated by the combination of the…”
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    Journal Article
  5. 5

    Low-loss high-speed switching devices, 2300-V 150-A static induction thyristor by Nishizawa, J., Muraoka, K., Tamamushi, T., Kawamura, Y.

    Published in IEEE transactions on electron devices (01-04-1985)
    “…Focussing attention to the performance of high-speed high off-state voltage and large current provided in the buried-gate-type static induction (SI) thyristor,…”
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    Journal Article
  6. 6

    Characteristics of the high-speed SI thyristor and its application to the 60-kHz 100-kW high-efficiency inverter by Muraoka, K., Kawamura, Y., Ohtsubo, Y., Sugawara, S., Tamamushi, T., Nishizawa, J.

    Published in IEEE transactions on power electronics (01-01-1989)
    “…The authors describe fabrication results for the 1200 V, 300 A class of the single-buried-gate, n-buffer free and anode-emitter-shorted, normally-on-type,…”
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    Journal Article
  7. 7

    Fabrication and optical-switching results on the integrated light-triggered and quenched static induction thyristor by Nishizawa, J., Tamamushi, T., Nonaka, K., Watanabe, H.

    Published in IEEE transactions on electron devices (01-12-1986)
    “…An integrated structure of the light-triggered and light-quenched (LTQ) static induction (SI) thyristor is introduced and is fabricated by the combination of…”
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    Journal Article
  8. 8

    Fabrication and optical-switching results of the double-gate static-induction thyristor with the first planar-gate and the second buried-gate structure by Nishizawa, J.I., Tamamushi, T., Nonaka, K., Shimomura, S.

    Published in IEEE electron device letters (01-03-1986)
    “…A new thyristor structure-a class of the double-gate (DG) static-induction (SI) thyristors-was fabricated and showed quick dual-gate current controllability…”
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    Journal Article
  9. 9

    A very high gain and a wide dynamic range static induction phototransistor by Nishizawa, J.-I., Tamamushi, T., Nonaka, K.-I., Suzuki, S.

    Published in IEEE electron device letters (01-01-1985)
    “…This letter describes a new phototransistor based on the static induction transistor (SIT) structure. A D/C optical gain and a gain-bandwidth product of a…”
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    Journal Article
  10. 10

    Static induction transistor image sensors by Nishizawa, J., Tamamushi, T., Ohmi, T.

    Published in IEEE transactions on electron devices (01-12-1979)
    “…New image sensors, based on the operational principle of static induction transistor (SIT), are described in this paper. Two operational modes of SIT image…”
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    Journal Article
  11. 11

    High speed and high density static induction transistor memory by Nishizawa, J., Tamamushi, T., Mochida, Y., Nonaka, T.

    Published in IEEE journal of solid-state circuits (01-10-1978)
    “…Describes a high speed and high density dynamic RAM utilizing a static induction transistor (SIT) structure. The main conduction mechanism of an SIT is carrier…”
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    Journal Article
  12. 12
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  14. 14

    Fabrication and Optical Switching Results on the Integrated Light Triggered and Quenched (LTQ) Static Induction Thyristor by Nishizawa, J., Tamamushi, T., Nonaka, K., Shimomura, S., Watanabe, H.

    “…An integrated structure of the Light Triggered and Light Quenched Static Induction Thyristor (LTQ SI Thy) is introduced and is fabricated by the combination of…”
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    Conference Proceeding
  15. 15

    A very high sensitivity and very high speed light triggered and light quenched static induction thyristor (LTQSIThy) by Nishizawa, J., Tamamushi, T., Nonaka, K.

    “…The purpose of this paper is to describe a new operational mode of the Static Induction Thyristor (SIThy), namely the Light Triggered and Light Quenched Static…”
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    Conference Proceeding
  16. 16

    Low Distortion, High Efficiency and High Carrier Frequency, Static Induction Transistor (SIT) Type Sinusoidal PWM Inverter for Uninterruptible Power Supplies (UPS) by Nishizawa, J., Mitsui, K., Mitamura, K., Maruyama, S., Ikehara, M., Tamamushi, T.

    “…Focusing attention to the very high speed switching performance of the 1KW class of the power static induction transistors (SITs), the very low harmonics…”
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    Conference Proceeding
  17. 17

    Low-loss high speed switching device, 2500V-300A Static Induction Thyristor by Nishizawa, J., Muraoka, K., Kawamura, Y., Tamamushi, T.

    “…An anode-emitter-shorted type 2500V-300A buried-gate Static Induction Thyristor is fabricated and resulted in the very high speed turn-on time of 2.0µS and…”
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    Conference Proceeding
  18. 18

    Quasi-resonant DC/DC converter using a single SI thyristor by Nishizawa, J., Tamamushi, T., Koga, T., Sugawara, S., Hayashi, H., Sekimoto, H.

    “…The authors have test-fabricated a quasiresonant DC/DC converter to reduce the switching loss of the static-induction (SI) thyristor, and have conducted…”
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    Conference Proceeding
  19. 19

    1 MHz, 1 kW series resonant converter for ultrasonic transducer using the high frequency power SITs by Tatsuta, M., Yamanaka, E., Wada, H., Tamamushi, T., Nishizawa, J.-I.

    “…A 1000 V, 30 A high-breakdown-voltage power static induction transistor (SIT) has been developed. It has a unity gain frequency of 50 MHz and a drain power…”
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    Conference Proceeding
  20. 20

    60kHz, 100kW Static Induction (SI) thyristor type voltage-controlled series resonant inverter for induction heating by Nishizawa, J., Tamamushi, T., Koga, T., Sugawara, S., Hayashi, H., Nozaki, T.

    “…60kHz, 100kW and the DC to AC efficiency of 91%, Static Induction (SI) thyristor type voltage-controlled series resonant inverter is developed using the…”
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    Conference Proceeding