Search Results - "Tamamura, Toshiaki"

Highly ordered nanochannel-array architecture in anodic alumina by Masuda, Hideki, Yamada, Haruki, Satoh, Masahiro, Asoh, Hidetaka, Nakao, Masashi, Tamamura, Toshiaki

“…The development of the ordered channel array in the anodic porous alumina was initiated by the textured pattern of the surface made by the molding process, and…”
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Self-collimating phenomena in photonic crystals by Kosaka, Hideo, Kawashima, Takayuki, Tomita, Akihisa, Notomi, Masaya, Tamamura, Toshiaki, Sato, Takashi, Kawakami, Shojiro

“…We found that self-determining collimated light is generated in a photonic crystal fabricated on silicon. The divergence of the collimated beam is insensitive…”
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Photonic crystals for micro lightwave circuits using wavelength-dependent angular beam steering by Kosaka, Hideo, Kawashima, Takayuki, Tomita, Akihisa, Notomi, Masaya, Tamamura, Toshiaki, Sato, Takashi, Kawakami, Shojiro

“…Light-beam steering that is extremely wavelength dependent has been demonstrated by using photonic crystals fabricated on Si. The scanning span reached 50°…”
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Self-organized growth of strained InGaAs quantum disks by Nötzel, Richard, Temmyo, Jiro, Tamamura, Toshiaki

“…The self-organized formation of box-like microstructures during the interrupted epitaxial growth of strained InGaAs/AlGaAs multilayer structures on (311)B…”
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Self-repair of ordered pattern of nanometer dimensions based on self-compensation properties of anodic porous alumina by Masuda, Hideki, Yotsuya, Masato, Asano, Mari, Nishio, Kazuyuki, Nakao, Masashi, Yokoo, Atsushi, Tamamura, Toshiaki

“…The self-repair of an ordered pattern of nanometer dimensions based on the self-compensation properties of anodic porous alumina is demonstrated. In a…”
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Photonic Crystal Using Anodic Porous Alumina by Masuda, Hideki, Ohya, Masayuki, Asoh, Hidetaka, Nakao, Masashi, Nohtomi, Masaya, Tamamura, Toshiaki

“…Two-dimensional (2D) photonic crystals in the visible wavelength region were fabricated using anodic porous alumina with a highly ordered hole array…”
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Quantum Wire Fabrication by E-Beam Elithography Using High-Resolution and High-Sensitivity E-Beam Resist ZEP-520 by Nishida, Toshio, Notomi, Masaya, Ryuzo Iga, Ryuzo Iga, Toshiaki Tamamura, Toshiaki Tamamura

“…We have evaluated the resolution of the positive electron-beam (E-beam) resist ZEP-520 using finely focused E-beam exposure for the application of quantum wire…”
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30-nm-Gate InP-Based Lattice-Matched High Electron Mobility Transistors with 350 GHz Cutoff Frequency by Tetsuya Suemitsu, Tetsuya Suemitsu, Tetsuyoshi Ishii, Tetsuyoshi Ishii, Haruki Yokoyama, Haruki Yokoyama, Takatomo Enoki, Takatomo Enoki, Yasunobu Ishii, Yasunobu Ishii, Toshiaki Tamamura, Toshiaki Tamamura

“…The device characteristics and fabrication of 30-nm-gate InAlAs/InGaAs high electron mobility transistors (HEMTs) lattice-matched to InP substrates are…”
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GaAs and InP Nanohole Arrays Fabricated by Reactive Beam Etching Using Highly Ordered Alumina Membranes by Nakao, Masashi, Oku, Satoshi, Tamamura, Toshiaki, Yasui, Kenshi, Masuda, Hideki

“…Highly ordered anodic porous alumina was used as a mask for a reactive beam etching (RBE) to transform the nanochannel pattern into III-V semiconductors. The…”
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Photonic Band Gap in Anodic Porous Alumina with Extremely High Aspect Ratio Formed in Phosphoric Acid Solution by Masuda, Hideki, Ohya, Masayuki, Nishio, Kazuyuki, Asoh, Hidetaka, Nakao, Masashi, Nohtomi, Masaya, Yokoo, Atsushi, Tamamura, Toshiaki

“…Two-dimensional (2D) photonic crystals were fabricated using anodic porous alumina with a highly ordered air-hole array of triangular lattice with a high…”
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Ideally Ordered Anodic Porous Alumina Mask Prepared by Imprinting of Vacuum-Evaporated Al on Si by Masuda, Hideki, Yasui, Kenji, Sakamoto, Yasuhisa, Nakao, Masashi, Tamamura, Toshiaki, Nishio, Kazuyuki

“…Application of imprinting of vacuum-evaporated Al on a Si substrate using an SiC mold with an ordered array of hexagonally arranged convexes and subsequent…”
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Semiconductor nanostructures formed by the Turing instability by Temmyo, Jiro, Nötzel, Richard, Tamamura, Toshiaki

“…We describe the surface topography domain in a strained InGaAs/AlGaAs system on the GaAs (311)B substrate during metalorganic-vapor-phase-epitaxial growth. The…”
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High-aspect-ratio nanometer-pattern fabrication using fullerene-incorporated nanocomposite resists for dry-etching application by SHIBATA, T, ISHII, T, NOZAWA, H, TAMAMURA, T

“…This paper presents the improved performance of a nanocomposite resist system that incorporates an unseparated mixture of fullerenes C 60 and C 70 into ZEP520,…”
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Nanocomposite resist system by Ishii, Tetsuyoshi, Nozawa, Hiroshi, Tamamura, Toshiaki

“…We propose a nanocomposite resist system that incorporates sub-nm carbon particles into a resist film to enable an ultrathin film resist process for nanometer…”
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Atomic force microscopy study of strained InGaAs quantum disks self-organizing on GaAs ( n 11)B substrates by Nötzel, Richard, Fukui, Takashi, Hasegawa, Hideki, Temmyo, Jiro, Tamamura, Toshiaki

“…Strained quantum-box structures are naturally formed during the interrupted growth of AlGaAs and InGaAs films on GaAs (n11)B substrates. InGaAs films organize…”
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Self-organization of boxlike microstructures on GaAs (311)B surfaces by metalorganic vapor-phase epitaxy by NÖTZEL, R, TEMMYO, J, TAMAMURA, T

“…We have found new self-organizing phenomena in metalorganic vapor-phase epitaxy of strained InGaAs/AlGaAs heterostructures on GaAs (311)B substrates. During…”
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Tunability of one-dimensional self-faceting on GaAs (311)A surfaces by metalorganic vapor-phase epitaxy by Nötzel, Richard, Temmyo, Jiro, Tamamura, Toshiaki

“…The controlled step bunching on GaAs (311)A oriented surfaces during growth by metalorganic vapor-phase epitaxy (MOVPE) leads to one-dimensional faceting with…”
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Strong photoluminescence emission at room temperature of strained InGaAs quantum disks (200–30 nm diameter) self-organized on GaAs (311)B substrates by Nötzel, Richard, Temmyo, Jiro, Kamada, Hidehiko, Furuta, Tomofumi, Tamamura, Toshiaki

“…We have recently found that quantum-box-like structures are formed during spontaneous reorganization of a sequence of AlGaAs and strained InGaAs epitaxial…”
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Self-organization of strained GaInAs microstructures on InP (311) substrates grown by metalorganic vapor-phase epitaxy by Nötzel, Richard, Temmyo, Jiro, Kozen, Atsuo, Tamamura, Toshiaki, Fukui, Takashi, Hasegawa, Hideki

“…The evolution of low-dimensional microstructures in the growth of strained GaInAs/AlInAs and GaInAs/InP heterostructures on planar InP (311)B and (311)A…”
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Fullerene-Derivative Nanocomposite Resist for Nanometer Pattern Fabrication by Ishii, Tetsuyoshi, Tamamura, Toshiaki, Shigehara, Kiyotaka

“…A nanocomposite resist system that incorporates a fullerene derivative into a conventional positive-type electron-beam resist, ZEP520, is examined. Because of…”
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