Surface Energy Band and Electron Affinity of Highly Phosphorous-doped Epitaxial CVD Diamond
The surface energy band diagrams and the electron affinity of hydrogen-terminated and oxygen-terminated highly phosphorous-doped single crystal diamond (111) surfaces have been studied by ultraviolet photoelectron spectroscopy, secondary electron spectroscopy, X-ray photoelectron spectroscopy and ph...
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| Published in: | E-journal of surface science and nanotechnology Vol. 5; pp. 33 - 40 |
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| Main Authors: | , , , , , , , , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
Tokyo
The Japan Society of Vacuum and Surface Science
01-01-2007
Japan Science and Technology Agency |
| Subjects: | |
| Online Access: | Get full text |
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| Summary: | The surface energy band diagrams and the electron affinity of hydrogen-terminated and oxygen-terminated highly phosphorous-doped single crystal diamond (111) surfaces have been studied by ultraviolet photoelectron spectroscopy, secondary electron spectroscopy, X-ray photoelectron spectroscopy and photoemission electron micro-spectroscopy. A hydrogen-terminated boron-doped diamond (001) surface was used as a reference of surface energy band diagram. The electron affinity of the H-terminated heavily P-doped diamond was determined to be 0.2 ± 0.15 eV, thus close to zero. The electron affinity of the O-terminated highly P-doped diamond was determined to be 0.0 ± 0.15 eV, thus can be negative. However, the surface energy bands for the two highly P-doped samples were found to have large amounts (3 eV) of upward bending toward surface. [DOI: 10.1380/ejssnt.2007.33] |
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| ISSN: | 1348-0391 1348-0391 |
| DOI: | 10.1380/ejssnt.2007.33 |