Search Results - "Takeya, Motonobu"
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GaN-Based High Power Blue-Violet Laser Diodes
Published in Japanese Journal of Applied Physics (2001)“…The epitaxial lateral overgrowth (ELO) technique is an important technology for improving the characteristics of GaN-based laser diodes (LDs). The…”
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2
Novel Methods of p-type Activation in Mg-doped GaN
Published in Japanese Journal of Applied Physics (2001)“…We have developed two methods for the p-type activation of Mg-doped GaN; a low-temperature long-time annealing method and a RF input activation method. In the…”
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3
Isovector quadrupole resonance in 13C(γ, n) reaction
Published in Journal of the Physical Society of Japan (01-03-2006)“…The photoneutron cross section for 13C was measured in the tagged photon energy range Eγ=17-70 MeV. Substantial forward to backward asymmetry was observed…”
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4
High-Power AlGaInN Laser Diodes with High Kink Level and Low Relative Intensity Noise
Published in Japanese Journal of Applied Physics (2002)“…High-power AlGaInN laser diodes with both high kink level and low relative intensity noise (RIN) are fabricated. A kink level of higher than 100 mW is obtained…”
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5
Dislocation related issues in the degradation of GaN-based laser diodes
Published in IEEE journal of selected topics in quantum electronics (01-11-2004)“…We investigate degraded GaN-based laser diodes (LDs) on epitaxial lateral overgrown GaN layers in terms of dislocations. Almost all of the threading…”
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6
Recent progress in high-power blue-violet lasers
Published in IEEE journal of selected topics in quantum electronics (01-09-2003)“…The property of GaInN-AlGaN heterostructures and GaInN multiple quantum well (MQW) gain GaInN laser diodes with low internal loss are described. GaInN…”
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7
Defects in degraded GaN-based laser diodes
Published in Physica status solidi. A, Applied research (01-11-2003)“…We investigate degraded GaN‐based laser diodes (LDs) fabricated on epitaxial lateral overgrown (ELO) GaN layers using transmission electron microscopy. The…”
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Journal Article Conference Proceeding -
8
100-mW kink-free blue-violet laser diodes with low aspect ratio
Published in IEEE journal of quantum electronics (01-01-2003)“…400-nm-band GaN-based laser diodes (LDs) operating with a kink-free output power of over 100 mW and having a low aspect ratio of 2.3 have been successfully…”
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9
Isovector Quadrupole Resonance in 13 C(γ, n ) Reaction
Published in Journal of the Physical Society of Japan (15-03-2006)Get full text
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10
AlGaInN high-power lasers grown on an ELO-GaN layer
Published in Journal of crystal growth (01-12-2000)“…Epitaxially laterally overgrown (ELO)-GaN substrates with dislocation-free regions can be prepared with a relatively small thickness using atmospheric pressure…”
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Journal Article Conference Proceeding