Search Results - "Takeya, Motonobu"

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  1. 1

    GaN-Based High Power Blue-Violet Laser Diodes by Tojyo, Tsuyoshi, Asano, Takeharu, Takeya, Motonobu, Hino, Tomonori, Kijima, Satoru, Goto, Shu, Uchida, Shiro, Ikeda, Masao

    “…The epitaxial lateral overgrowth (ELO) technique is an important technology for improving the characteristics of GaN-based laser diodes (LDs). The…”
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    Journal Article
  2. 2

    Novel Methods of p-type Activation in Mg-doped GaN by Takeya, Motonobu, Ikeda, Masao

    “…We have developed two methods for the p-type activation of Mg-doped GaN; a low-temperature long-time annealing method and a RF input activation method. In the…”
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    Journal Article
  3. 3

    Isovector quadrupole resonance in 13C(γ, n) reaction by MAEDA, Kazushige, ITO, Sachiko, ITOH, Hideaki, KONNO, Osamu, MATSUYAMA, Hideto, MURAKAMI, Tetsuya, SASAKI, Takaoki, SUDA, Toshimi, TAKEYA, Motonobu, TERASAWA, Tatuo

    Published in Journal of the Physical Society of Japan (01-03-2006)
    “…The photoneutron cross section for 13C was measured in the tagged photon energy range Eγ=17-70 MeV. Substantial forward to backward asymmetry was observed…”
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    Journal Article
  4. 4

    High-Power AlGaInN Laser Diodes with High Kink Level and Low Relative Intensity Noise by Tojyo, Tsuyoshi, Uchida, Shiro, Mizuno, Takashi, Asano, Takeharu, Takeya, Motonobu, Hino, Tomonori, Kijima, Satoru, Goto, Shu, Yabuki, Yoshifumi, Ikeda, Masao

    “…High-power AlGaInN laser diodes with both high kink level and low relative intensity noise (RIN) are fabricated. A kink level of higher than 100 mW is obtained…”
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    Journal Article
  5. 5

    Dislocation related issues in the degradation of GaN-based laser diodes by Tomiya, S., Hino, T., Goto, S., Takeya, M., Ikeda, M.

    “…We investigate degraded GaN-based laser diodes (LDs) on epitaxial lateral overgrown GaN layers in terms of dislocations. Almost all of the threading…”
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    Journal Article
  6. 6

    Recent progress in high-power blue-violet lasers by Uchida, S., Takeya, M., Ikeda, S., Mizuno, T., Fujimoto, T., Matsumoto, O., Goto, S., Tojyo, T., Ikeda, M.

    “…The property of GaInN-AlGaN heterostructures and GaInN multiple quantum well (MQW) gain GaInN laser diodes with low internal loss are described. GaInN…”
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    Journal Article
  7. 7

    Defects in degraded GaN-based laser diodes by Tomiya, Shigetaka, Goto, Shu, Takeya, Motonobu, Ikeda, Masao

    Published in Physica status solidi. A, Applied research (01-11-2003)
    “…We investigate degraded GaN‐based laser diodes (LDs) fabricated on epitaxial lateral overgrown (ELO) GaN layers using transmission electron microscopy. The…”
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    Journal Article Conference Proceeding
  8. 8

    100-mW kink-free blue-violet laser diodes with low aspect ratio by Asano, T., Tojyo, T., Mizuno, T., Takeya, M., Ikeda, S., Shibuya, K., Hino, T., Uchida, S., Ikeda, M.

    Published in IEEE journal of quantum electronics (01-01-2003)
    “…400-nm-band GaN-based laser diodes (LDs) operating with a kink-free output power of over 100 mW and having a low aspect ratio of 2.3 have been successfully…”
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    Journal Article
  9. 9
  10. 10

    AlGaInN high-power lasers grown on an ELO-GaN layer by Takeya, Motonobu, Yanashima, Katsunori, Asano, Takeharu, Hino, Tomonori, Ikeda, Shinro, Shibuya, Katsuyoshi, Kijima, Satoru, Tojyo, Tsuyoshi, Ansai, Shinichi, Uchida, Shiro, Yabuki, Yoshifumi, Aoki, Tsuneyoshi, Asatsuma, Tsunenori, Ozawa, Masafumi, Kobayashi, Toshimasa, Morita, Etsuo, Ikeda, Masao

    Published in Journal of crystal growth (01-12-2000)
    “…Epitaxially laterally overgrown (ELO)-GaN substrates with dislocation-free regions can be prepared with a relatively small thickness using atmospheric pressure…”
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    Journal Article Conference Proceeding