Search Results - "Takeuchi, Yukihiro"

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  1. 1

    Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive Cosputtering by Akiyama, Morito, Kamohara, Toshihiro, Kano, Kazuhiko, Teshigahara, Akihiko, Takeuchi, Yukihiro, Kawahara, Nobuaki

    Published in Advanced materials (Weinheim) (02-02-2009)
    “…A high‐temperature piezoelectric material exhibits a good balance between high maximum use temperature and large piezoelectricity. This is achieved by the…”
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    Journal Article
  2. 2

    Fatigue Testing of Polycrystalline Silicon Thin-Film Membrane Using Out-of-Plane Bending Vibration by Tanemura, Tomoki, Yamashita, Shuichi, Wado, Hiroyuki, Takeuchi, Yukihiro, Tsuchiya, Toshiyuki, Tabata, Osamu

    Published in Japanese Journal of Applied Physics (01-11-2012)
    “…This paper describes a new fatigue testing method for polycrystalline-silicon (polysilicon) thin-film membrane to evaluate its mechanical reliability not…”
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    Journal Article
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    Development of RIE-lag Reduction Technique for Si Deep Etching Using Double Protection Layer Method by Ohara, Junji, Asami, Kazushi, Takeuchi, Yukihiro, Sato, Kazuo

    “…In this study, we have developed a new reactive ion etching (RIE)‐lag reduction technique in Si deep etching. The conventional RIE‐lag reduction technique has…”
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    Journal Article
  5. 5

    Development of Si DRIE process allowing simultaneous etching from narrow and wide mask openings by Ohara, Junji, Takeuchi, Yukihiro, Sato, Kazuo

    Published in Electronics and communications in Japan (01-04-2011)
    “…We have developed a new Si DRIE process, which allows simultaneous etching of both narrow and wide mask opening patterns. MEMS devices often contain a wide…”
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    Journal Article
  6. 6

    Critical-layer thickness of a pseudomorphic In0.8Ga0.2As heterostructure grown on InP by TACANO, M, SUGIYAMA, Y, TAKEUCHI, Y

    Published in Applied physics letters (27-05-1991)
    “…A very high electron mobility pseudomorphic In0.8Ga0.2As heterostructure is successfully grown on InP both by the elimination of the overshoot of flux…”
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    Journal Article
  7. 7

    Infrared absorption sensor for multiple gas sensing. Development of a Fabry-Perot spectrometer with ultrawide wavelength range by Enomoto, Tetsuya, Suzuki, Megumi, Iwaki, Takao, Wado, Hiroyuki, Takeuchi, Yukihiro

    Published in Electronics and communications in Japan (01-05-2013)
    “…We report on a novel MEMS (microelectromechanical system) based on a Fabry–Perot spectrometer with an ultrawide wavelength range (3.2 to 8.4 µm) compared to…”
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    Journal Article
  8. 8

    Development of fabrication process for integrated micro-optical elements on Si substrate by Ohara, Junji, Kano, Kazuhiko, Takeuchi, Yukihiro

    Published in Sensors and actuators. A. Physical. (02-05-2008)
    “…We have developed a new process for fabricating micro-optical elements by applying deep reactive ion etching (DRIE) process and thermal oxidation. This…”
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    Journal Article
  9. 9

    Temperature dependence of piezoelectric properties of sputtered AlN on silicon substrate by Kano, Kazuhiko, Arakawa, Kazuki, Takeuchi, Yukihiro, Akiyama, Morito, Ueno, Naohiro, Kawahara, Nobuaki

    Published in Sensors and actuators. A. Physical. (14-08-2006)
    “…We report for the first time the temperature dependence of the piezoelectric coefficient d 33 of the aluminum nitride (AlN) film measured at temperatures up to…”
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    Journal Article
  10. 10

    In-depth distribution of ion irradiation defects evaluated by mobility of Al0.3Ga0.7As/GaAs two-dimensional electron gas by TAKEUCHI, Y, SOGA, H, UENO, Y, KANAYAMA, T, SUGIYAMA, Y, TACANO, M

    Published in Applied physics letters (26-10-1992)
    “…It has been found that the low-temperature (<100 K) mobility of two-dimensional electron gas is a sensitive and quantitative measure for ion irradiation…”
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    Journal Article
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    The law of the iterated logarithm for subsequences: A simple proof by Fukuyama, K., Takeuchi, Y.

    Published in Lobachevskii journal of mathematics (01-07-2008)
    “…We give a simple proof of the law of the iterated logarithm for subsequences of sums of i.i.d…”
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    Journal Article
  17. 17

    Critical-layer thickness of a pseudomorphic In(0.8)Ga(0.2)As heterostructure grown on InP by TACANO, MUNECAZU, Sugiyama, Yoshinobu, Takeuchi, Yukihiro

    Published in Applied physics letters (27-05-1991)
    “…A very high electron mobility pseudomorphic In(0.8)Ga(0.2)As heterostructure is successfully grown on InP both by the elimination of the overshoot of flux…”
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    Journal Article
  18. 18

    A Process-Variation-Adaptive Network-on-Chip with Variable-Cycle Routers by Nakata, Y., Takeuchi, Y., Kawaguchi, H., Yoshimoto, M.

    “…As process technology is scaled down, a typical system on a chip (SoC) becomes denser. In scaled process technology, process variation becomes greater and…”
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    Conference Proceeding
  19. 19

    Scalable parallel processing for H.264 encoding application to multi/many-core processor by Takeuchi, Y, Nakata, Y, Kawaguchi, H, Yoshimoto, M

    “…Although valuable, the high-quality video compression format H.264/AVC workload complicates real-time encoding. This paper describes scalable parallel…”
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    Conference Proceeding
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    In situ Hall measurement of two-dimensional electron gas at Al0.3Ga0.7As/GaAs interface irradiated with 10-keV Ar ions by KANAYAMA, T, TAKEUCHI, Y, SUGIYAMA, Y, TACANO, M

    Published in Applied physics letters (21-09-1992)
    “…In situ Hall measurements reveal that the mobility of two-dimensional electron gas 80-nm-deep from the surface decreases simultaneously with 10-keV Ar-ion…”
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    Journal Article