Search Results - "Takayanagi, Mariko"
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Tamibarotene-loaded citric acid-crosslinked alkali-treated collagen matrix as a coating material for a drug-eluting stent
Published in Science and technology of advanced materials (01-12-2012)“…Tamibarotene-loaded biodegradable matrices with antithrombogenic and drug-releasing properties were prepared in a crosslinking reaction between amino groups of…”
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Sustaining Effect of Gold Colloids on the Amorphous Titanium Dioxide Particles
Published in Chemistry letters (05-01-2008)“…We have reported that TiO2 particles prepared in reverse micelles showed high photocatalytic activity in an amorphous rather than anatase state and that the…”
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Characterization of Inversion-Layer Capacitance of Electrons in High- k/Metal Gate Stacks
Published in IEEE transactions on electron devices (01-11-2010)“…The inversion-layer capacitance C inv of electrons in high- k /metal gate stacks (HKMGs) is studied theoretically and experimentally from the viewpoint of the…”
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Experimental Evidence of Inversion-Layer Mobility Lowering in Ultrathin Gate Oxide Metal-Oxide-Semiconductor Field-Effect-Transistors with Direct Tunneling Current
Published in Japanese Journal of Applied Physics (01-01-2002)“…Results of the direct measurement of inversion-layer mobility for MOSFETs with ultrathin gate oxides based on the split C-V method are reported…”
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Gate Capacitance Reduction Due to the Inversion Layer in High- k/Metal Gate Stacks Within a Subnanometer EOT Regime
Published in IEEE transactions on electron devices (01-04-2011)“…We investigate the determining mechanisms of the inversion-layer capacitance C inv in the high-k/metal gate stacks, focusing on the two perturbative effects…”
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Intrinsic Effects of the Crystal Orientation Difference between (100) and (110) Silicon Substrates on Characteristics of High-$k$/Metal Gate Metal--Oxide--Semiconductor Field-Effect Transistors
Published in Japanese Journal of Applied Physics (01-06-2011)“…A detailed comparison of high-$k$/metal gate stacks fabricated on the (100)- and (110)-oriented substrates has been made. We have verified that there is no…”
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Characteristics of La2O3- and Al2O3-Capped HfO2 Dielectric Metal--Oxide--Semiconductor Field-Effect Transistors Fabricated on (110)-Oriented Silicon Substrates
Published in Jpn J Appl Phys (01-05-2011)“…The influence of the crystal orientation difference between (100) and (110) silicon substrates on characteristics of La 2 O 3 - and Al 2 O 3 -capped HfO 2…”
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Effects of Electron Current and Hole Current on Dielectric Breakdown in HfSiON Gate Stacks
Published in Japanese Journal of Applied Physics (01-04-2012)Get full text
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Effects of Electron Current and Hole Current on Dielectric Breakdown in HfSiON Gate Stacks
Published in Japanese Journal of Applied Physics (01-04-2012)“…The roles of electrons and holes in the dielectric breakdown of HfSiON have been investigated by controlling the numbers of injected hot electrons and hot…”
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Supuramolecular structure of self-assembly fabricated with novel aromatic polyether on Si-wafers
Published in Journal of oleo science (2008)“…A new synthetic polymer of aromatic polyether (APE), having a narrow distribution of molecular weight, formed a specific self-assembly of Langmuir film (L…”
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Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness
Published in Japanese Journal of Applied Physics (01-04-2002)“…A new model of the roughness correlation function S(r) has been proposed in order to explain the different behavior of high field mobility limited by surface…”
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An Antithrombogenic Citric Acid-Crosslinked Gelatin with Endothelialization Activity
Published in Advanced healthcare materials (01-09-2012)“…A novel citric acid‐crosslinked gelatin matrix with endothelialization activity and anti‐adhesive properties for platelets is prepared. The matrix is…”
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Characterization of Inversion-Layer Capacitance of Electrons in High- [Formula Omitted]/Metal Gate Stacks
Published in IEEE transactions on electron devices (01-11-2010)“…The inversion-layer capacitance [Formula Omitted] of electrons in high-[Formula Omitted]/metal gate stacks (HKMGs) is studied theoretically and experimentally…”
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Characterization of high-k materials for the advancement of high-speed ULSIs
Published in E-journal of surface science and nanotechnology (2003)“…Insulators with high dielectric constants (so-called high-k) have been intensively investigated for the replacement of SiO2 gate dielectric of MOS transistors…”
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Photocatalytic Activity of Au/TiOx Particles Stimulated with Visible Light: Gas-phase Reactions of Formaldehyde, Acetaldehyde, and Phenol
Published in Chemistry letters (05-03-2008)“…This document will communicate that the Au/TiOx photocatalyst shows a high activity with tremendous efficiency for the degradation of volatile organic…”
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Gate Capacitance Reduction Due to the Inversion Layer in High- [Formula Omitted]/Metal Gate Stacks Within a Subnanometer EOT Regime
Published in IEEE transactions on electron devices (01-04-2011)“…We investigate the determining mechanisms of the inversion-layer capacitance [Formula Omitted] in the high-[Formula Omitted]/metal gate stacks, focusing on the…”
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Photocatalytic Activity of Au/TiO x Particles Stimulated with Visible Light: Gas-phase Reactions of Formaldehyde, Acetaldehyde, and Phenol
Published in Chemistry letters (05-03-2008)“…This document will communicate that the Au/TiOx photocatalyst shows a high activity with tremendous efficiency for the degradation of volatile organic…”
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Photocatalytic Activity of Au/TiOx Particles Stimulated with Visible Light
Published in Chemistry letters (01-03-2008)“…This document will communicate that the Au/TiOx photocatalyst shows a high activity with tremendous efficiency for the degradation of volatile organic…”
Get full text
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