Search Results - "Takamiya, Saburo"

Oxidation of InAlAs and Its Application to Gate Insulator of InAlAs/InGaAs Metal Oxide Semiconductor High Electron Mobility Transistor by Paul, Narayan Chandra, Nakamura, Kazuki, Seto, Hiroki, Iiyama, Koichi, Takamiya, Saburo

“…InAlAs was oxidized by UV and ozone process. Nanometer-order thin-oxide layers were generated in proportion to the square root of the process period, although…”
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Mechanical Stress Caused by Adsorption of O or N on Ga-terminated (100) GaAs Surface and InAl-terminated (100) InAlAs Surface: Degradation of Insulator/Semiconductor Interface by Seto, Hiroki, Miyamura, Satoshi, Inokuma, Takao, Iiyama, Koichi, Takamiya, Saburo

“…Mechanical stress at the surfaces of GaAs and InAlAs, caused by adsorption of O or N on their group III surfaces, was calculated using small cluster models and…”
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Studies of Effects of Adsorption of Silicon or Germanium on the Electronic States of (100) GaAs Surfaces by Miyamura, Satoshi, Seto, Hiroki, Inokuma, Takao, Iiyama, Koichi, Takamiya, Saburo

“…The electronic states of both bare Ga-terminated and As-terminated (100)-(1×1) GaAs surfaces and the same surfaces with adsorbed Si or Ge were studied by…”
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High-efficiency and highly reliable 20 W GaAs power field-effect transistor in C band by SONODA, T, SAKAMOTO, S, KASAI, N, YAMANOUCHI, M, TAKAMIYA, S, KASHIMOTO, Y

“…This paper describes a high-performance and highly reliable GaAs field-effect transistor (FET) with a new gate structure employing the stepped gate recess…”
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Chromatic dispersion measurements of long optical fibers by means of optical ranging system using a frequency-shifted feedback laser by Jiyama, K., Maeda, T., Takamiya, S.

“…We describe the experimental results on the chromatic dispersion measurement of long optical fibers by means of optical ranging system using a…”
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Structural and Electrical Characterization of Oxidated, Nitridated and Oxi-nitridated (100) GaAs Surfaces by Paul, Narayan Chandra, Nakamura, Kazuki, Takebe, Masahide, Takemoto, Akira, Inokuma, Takao, Iiyama, Koichi, Takamiya, Saburo, Higashimine, Koichi, Ohtsuka, Nobuo, Yonezawa, Yasuto

“…Oxidation by the UV & ozone process, nitridation by the N helicon-wave-excited plasma process, and the combination of these processes are applied to (100) GaAs…”
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I–V Characteristics of Schottky/Metal-Insulator-Semiconductor Diodes with Tunnel Thin Barriers by Sugimura, Tomoyuki, Tsuzuku, Tatsutoshi, Kasai, Yuhki, Iiyama, Kouichi, Takamiya, Saburo

“…Current–voltage ( I – V ) characteristics and their temperature dependence, of Schottky and metal-insulator-semiconductor diodes with tunnel thin insulating…”
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Two Levels of Ni/n-GaAs Schottky Barrier Heights Formed on a Wafer by Controlling pH of Pretreatment Chemicals: Effect of Oxygen Adsorption by Tsuzuku, Tatsutoshi, Sugimura, Tomoyuki, Kasai, Yuuki, Inokuma, Takao, Iiyama, Kouichi, Takamiya, Saburo

“…Schottky barrier heights of Ni/n-GaAs junctions were controlled by changing the pH of pretreatment chemicals. An effective barrier height of 0.8 eV was…”
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Source-drain burnout mechanism of GaAs power MESFETS: Three terminal effects by Takamiya, Saburo, Sonoda, Takuji, Yamanouchi, Masahide, Fujioka, Takashi, Kohno, Masaki

“…Theoretical expressions for thermal and electrical feedback effects are derived. These limit the power capability of a power FET and lead a device to…”
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Reduction of interface contamination in regrown GaAs on AlGaAs using a novel two-step HCl gas etching process by Kizuki, Hirotaka, Fujii, Nariaki, Miyashita, Motoharu, Mihashi, Yutaka, Takamiya, Saburo

“…A two-step HCl gas etching process followed by regrowth using metalorganic chemical vapor deposition (MOCVD) has been developed. Two-step HCl gas etching…”
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Metalorganic vapor phase epitaxy growth of Be-doped InP using bismethylcyclopentadienyl-berylium by KIMURA, T, ISHIDA, T, SONODA, T, MIHASHI, Y, TAKAMIYA, S, MITSUI, S

“…We have applied Be as a p-type dopant for the InP layer grown by metalorganic vapor phase epitaxy. Very good control of Be doping has been obtained with…”
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Ultra-high throughput of GaAs and (AlGa)As layers grown by molecular beam epitaxy (MBE) with a specially designed MBE system by SONODA, T, ITO, M, SEGAWA, K, TAKAMIYA, S, MITSUI, S

“…The ultra-high throughput of extremely uniform GaAs and (AlGa)As layers with excellent surface morphology can be realized by MBE with a new MBE system designed…”
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(Invited) Visible Semiconductor Laser by Susaki, Wataru, Takamiya, Saburo

“…The state-of-the-art visible semiconductor lasers are reviewed. The characteristics and reliability problems of ternary and quarternary lasers grown on GaAsP…”
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Current Multiplication Rate at the Peripheries of Buried Junctions by Takamiya, Saburo, Kondo, Akihiro, Shirahata, Kiyoshi

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15 mW Single Mode CW Operation of Crank Structure TJS Laser Diodes at High Temperature by Kumabe, Hisao, Tanaka, Toshio, Nita, Shigeyuki, Seiwa, Yoshito, Sogo, Toshio, Takamiya, Saburo

“…A new high power AlGaAs laser with a window structure, crank type TJS laser, has been developed. The laser operates in a fundamental transverse mode even at 20…”
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GaAs-MISFETs with insulating gate films formed by direct oxidation and by oxinitridation of recessed GaAs surfaces by Takebe, M., Nakamura, K., Paul, N.C., Iiyama, K., Takamiya, S.

“…Direct oxidation by an ultraviolet (UV) and ozone process and oxinitridation (plasma nitridation after oxidation) of GaAs surfaces were used to form…”
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Fabrication of GaAs MISFET with nm-thin oxidized layer formed by UV and ozone process by Iiyama, K., Kita, Y., Ohta, Y., Nasuno, M., Takamiya, S., Higashimine, K., Ohtsuka, N.

“…A gate insulating layer with single nm-order thickness for suppressing gate leakage current is one of the key factors in extending downsizing limits, based…”
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Effect of Oxidation using Ultraviolet Light and Ozone and Subsequent Nitridation using Electron Cyclotron Resonance Plasma on Gate Portion of GaAs Field-Effect Transistors by Seto, Hiroki, Fujino, Yuhki, Iiyama, Koichi, Takamiya, Saburo, Hisaka, Takayuki, Totsuka, Masahiro, Aihara, Yasuki

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GaAs Metal Insulator Semiconductor Field Effect Transistor with Oxi-Nitrided Gate Film Formed by New Process Utilizing Al Layer as Resist Film for Selective Etching, Oxi-Nitridation and Lift-Off by Fujino, Yuhki, Seto, Hiroki, Takebe, Masahide, Tametou, Mitoko, Paul, Narayan Chandra, Iiyama, Koichi, Takamiya, Saburo

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n-Channel p-channel enhancement/inversion mode GaAs-MISFETs with gate insulating layers formed by dry oxi-nitridation by Tametou, Mitoko, Takebe, Masahide, Paul, Narayan Chandra, Iiyama, Kouichi, Takamiya, Saburo

“…Test fabrication of n‐channel p‐channel enhancement/inversion mode GaAs‐MISFET with a GaAs oxy‐nitrided gate insulation film formed by nitriding after…”
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