Search Results - "Takai, Kazuaki"

Ferroelectric capacitor with an asymmetric double-layer PLZT structure for FRAM by Wang, Wensheng, Nakamura, Ko, Eshita, Takashi, Nomura, Kenji, Takai, Kazuaki, Yamaguchi, Hideshi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi, Kojima, Manabu

“…We developed a lanthanum-doped Pb(Zr0.4,Ti0.6)O3 (PLZT)-based ferroelectric capacitor for low-voltage operation of ferroelectric memory for use in edge devices…”
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A ferroelectric capacitor with an asymmetric double-layered ferroelectric structure comprising a liquid-delivery MOCVD Pb(Zr, Ti)O3 layer and a sputter-deposited La-doped Pb(Zr, Ti)O3 for highly reliable FeRAM by Wang, Wensheng, Nakamura, Ko, Nakabayashi, Masaaki, Eshita, Takashi, Takai, Kazuaki, Suezawa, Kenkichi, Oikawa, Mitsuaki, Sato, Nozomi, Ozawa, Soichiro, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi, Nagai, Kouichi

“…We have developed a double-layered ferroelectric capacitor comprising a liquid-delivery metal–organic chemical vapor deposition-based Pb(Zr, Ti)O3 (PZT) lower…”
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High Speed Pulse Measurement of Micro Ferroelectric Capacitors Using a Multi-Probe Atomic Force Microscope by Kin, Nobuhiro, Takai, Kazuaki, Honda, Koichiro

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Development of a Pb(Zr,Ti)O3 capacitor employing an IrO x /Ir bottom electrode for highly reliable ferroelectric random access memories by Sato, Nozomi, Wang, Wensheng, Eshita, Takashi, Oikawa, Mitsuaki, Nakabayashi, Masaaki, Takai, Kazuaki, Nakamura, Ko, Nagai, Kouichi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi

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Development of a Pb(Zr,Ti)O 3 capacitor employing an IrO x /Ir bottom electrode for highly reliable ferroelectric random access memories by Sato, Nozomi, Wang, Wensheng, Eshita, Takashi, Oikawa, Mitsuaki, Nakabayashi, Masaaki, Takai, Kazuaki, Nakamura, Ko, Nagai, Kouichi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi

“…A highly {111}-oriented metal-organic CVD Pb(Zr,Ti)O 3 (PZT) is successfully developed using IrO x /Ir instead of Ir as the bottom electrode. The {111} PZT…”
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Development of a Pb(Zr,Ti)O3 capacitor employing an IrOx/Ir bottom electrode for highly reliable ferroelectric random access memories by Sato, Nozomi, Wang, Wensheng, Eshita, Takashi, Oikawa, Mitsuaki, Nakabayashi, Masaaki, Takai, Kazuaki, Nakamura, Ko, Nagai, Kouichi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi

“…A highly {111}-oriented metal-organic CVD Pb(Zr,Ti)O3 (PZT) is successfully developed using IrOx/Ir instead of Ir as the bottom electrode. The {111} PZT…”
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An improvement of low temperature characteristics of an La-doped Pb(Zr,Ti)O3 capacitor by Wang, Wensheng, Eshita, Takashi, Takai, Kazuaki, Nomura, Kenji, Yamaguchi, Hideshi, Nakamura, Ko, Ozawa, Soichiro, Nagai, Kouichi, Watanabe, Junichi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi, Kojima, Manabu

“…We developed a lanthanum-doped Pb(Zr0.4,Ti0.6)O3 (PLZT)-based ferroelectric capacitor (FE) aiming at low-voltage operation of ferroelectric random access…”
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An improvement of low temperature characteristics of an La-doped Pb(Zr,Ti)O 3 capacitor by Wang, Wensheng, Eshita, Takashi, Takai, Kazuaki, Nomura, Kenji, Yamaguchi, Hideshi, Nakamura, Ko, Ozawa, Soichiro, Nagai, Kouichi, Watanabe, Junichi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi, Kojima, Manabu

“…We developed a lanthanum-doped Pb(Zr 0.4 ,Ti 0.6 )O 3 (PLZT)-based ferroelectric capacitor (FE) aiming at low-voltage operation of ferroelectric random access…”
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Ferroelectric random access memory with high electric properties and high production yield realized by employing an AlO x underlying layer of Pt bottom electrode for a La-doped lead zirconate titanate capacitor by Wang, Wensheng, Nomura, Kenji, Nakamura, Ko, Eshita, Takashi, Ozawa, Soichiro, Yamaguchi, Hideshi, Takai, Kazuaki, Watanabe, Junichi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi, Kataoka, Yuji, Kojima, Manabu

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Ferroelectric random access memory with high electric properties and high production yield realized by employing an AlOx underlying layer of Pt bottom electrode for a La-doped lead zirconate titanate capacitor by Wang, Wensheng, Nomura, Kenji, Nakamura, Ko, Eshita, Takashi, Ozawa, Soichiro, Yamaguchi, Hideshi, Takai, Kazuaki, Watanabe, Junichi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi, Kataoka, Yuji, Kojima, Manabu

“…Although ferroelectric random access memory (FRAM) has superior electric properties, its downside is that it has a relatively larger cell area in comparison…”
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Control of La-doped Pb(Zr,Ti)O3 crystalline orientation and its influence on the properties of ferroelectric random access memory by Wang, Wensheng, Nomura, Kenji, Yamaguchi, Hideshi, Nakamura, Ko, Eshita, Takashi, Ozawa, Soichiro, Takai, Kazuaki, Mihara, Satoru, Hikosaka, Yukinobu, Hamada, Makoto, Kataoka, Yuji

“…We investigated the crystallization mechanisms of sputter-deposited La-doped Pb(Zr,Ti)O3 (PLZT) on a Pt/Ti metal stack in the postdeposition annealing (PDA) at…”
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Control of La-doped Pb(Zr,Ti)O 3 crystalline orientation and its influence on the properties of ferroelectric random access memory by Wang, Wensheng, Nomura, Kenji, Yamaguchi, Hideshi, Nakamura, Ko, Eshita, Takashi, Ozawa, Soichiro, Takai, Kazuaki, Mihara, Satoru, Hikosaka, Yukinobu, Hamada, Makoto, Kataoka, Yuji

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Ferroelectric random access memory with high electric properties and high production yield realized by employing an AlO^sub x^ underlying layer of Pt bottom electrode for a La-doped lead zirconate titanate capacitor by Wang, Wensheng, Nomura, Kenji, Nakamura, Ko, Eshita, Takashi, Ozawa, Soichiro, Yamaguchi, Hideshi, Takai, Kazuaki, Watanabe, Junichi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi, Kataoka, Yuji, Kojima, Manabu

“…Although ferroelectric random access memory (FRAM) has superior electric properties, its downside is that it has a relatively larger cell area in comparison…”
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Improvement of ferroelectric random access memory manufacturing margin by employing Pt/AlO x bottom electrode for the La-doped Pb(Zr,Ti)O 3 ferroelectric capacitor by Nomura, Kenji, Wang, Wensheng, Yamaguchi, Hideshi, Nakamura, Ko, Eshita, Takashi, Ozawa, Soichiro, Takai, Kazuaki, Mihara, Satoru, Hikosaka, Yukinobu, Hamada, Makoto, Kojima, Manabu, Kataoka, Yuji

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Improvement of ferroelectric random access memory manufacturing margin by employing Pt/AlO ^sub x^ bottom electrode for the La-doped Pb(Zr,Ti)O^sub 3^ ferroelectric capacitor by Nomura, Kenji, Wang, Wensheng, Yamaguchi, Hideshi, Nakamura, Ko, Eshita, Takashi, Ozawa, Soichiro, Takai, Kazuaki, Mihara, Satoru, Hikosaka, Yukinobu, Hamada, Makoto, Kojima, Manabu, Kataoka, Yuji

“…In our previous works on La-doped Pb(Zr,Ti)O3 (PLZT) growth on a Pt/Ti bottom electrode, the O2 content in postdeposition annealing (PDA) was found to play an…”
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Improvement of ferroelectric random access memory manufacturing margin by employing Pt/AlOx bottom electrode for the La-doped Pb(Zr,Ti)O3 ferroelectric capacitor by Nomura, Kenji, Wang, Wensheng, Yamaguchi, Hideshi, Nakamura, Ko, Eshita, Takashi, Ozawa, Soichiro, Takai, Kazuaki, Mihara, Satoru, Hikosaka, Yukinobu, Hamada, Makoto, Kojima, Manabu, Kataoka, Yuji

“…In our previous works on La-doped Pb(Zr,Ti)O3 (PLZT) growth on a Pt/Ti bottom electrode, the O2 content in postdeposition annealing (PDA) was found to play an…”
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Control of La-doped Pb(Zr,Ti)O^sub 3^ crystalline orientation and its influence on the properties of ferroelectric random access memory by Wang, Wensheng, Nomura, Kenji, Yamaguchi, Hideshi, Nakamura, Ko, Eshita, Takashi, Ozawa, Soichiro, Takai, Kazuaki, Mihara, Satoru, Hikosaka, Yukinobu, Hamada, Makoto

“…We investigated the crystallization mechanisms of sputter-deposited La-doped Pb(Zr,Ti)O3 (PLZT) on a Pt/Ti metal stack in the postdeposition annealing (PDA) at…”
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Influence of electrode contacts on leakage current of SrTiO3 capacitors by TAMURA, T, TAKAI, K, NOSHIRO, H, KIMURA, M, OTANI, S, YAMADA, M

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A new electrode structure of IrOx/Bi-doped SrRuO3 for highly reliable La-doped Pb (Zr, Ti)O3-based ferroelectric memories by Wang, Wensheng, Takai, Kazuaki, Nakamura, Ko, Oikawa, Mitsuaki, Ozawa, Soichiro, Nagai, Kouichi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi, Kojima, Manabu, Eshita, Takashi, Nomura, Kenji, Yamaguchi, Hideshi

“…We successfully developed a lanthanum (La)-doped Pb (Zr, Ti)O 3 (PLZT) based ferroelectric capacitor (FC) using a new electrode material of bismuth (Bi) doped…”
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A Triple-Protection Structured COB FRAM with 1.2-V Operation and 1017-Cycle Endurance by Saito, Hitoshi, Sugimachi, Tatsuya, Nakamura, Ko, Ozawa, Soichiro, Sashida, Naoya, Mihara, Satoru, Hikosaka, Yukinobu, Wensheng Wang, Hori, Tomoyuki, Takai, Kazuaki, Nakazawa, Mitsuharu, Kosugi, Noboru, Okuda, Masaki, Hamada, Makoto, Kawashima, Shoichiro, Eshita, Takashi, Matsumiya, M.

“…We have developed a ferroelectric RAM (FRAM) with a low operation voltage of 1.2 V and a high switching endurance up to 1017 cycles. Our newly developed…”
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