Search Results - "Takagishi, S"

High somatostatin receptor expression and efficacy of somatostatin analogues in patients with metastatic Merkel cell carcinoma by Akaike, T., Qazi, J., Anderson, A., Behnia, F.S., Shinohara, M.M., Akaike, G., Hippe, D.S., Thomas, H., Takagishi, S.R., Lachance, K., Park, S.Y., Tarabadkar, E.S., Iyer, J.G., Blom, A., Parvathaneni, U., Vesselle, H., Nghiem, P., Bhatia, S.

“…Summary Background Merkel cell carcinoma (MCC) is an aggressive, high‐grade, cutaneous neuroendocrine tumour (NET). Agents blocking programmed death…”
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Associations between early sleep-disordered breathing following moderate-to-severe traumatic brain injury and long-term chronic pain status: a Traumatic Brain Injury Model Systems study by Martin, Aaron M, Pinto, Shanti M, Tang, Xinyu, Hoffman, Jeanne M, Wittine, Lara, Walker, William C, Schwartz, Daniel J, Kane, Georgia, Takagishi, S Curtis, Nakase-Richardson, Risa

“…To explore the relationship between polysomnography-derived respiratory indices and chronic pain status among individuals following traumatic brain injury…”
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Role of Postoperative Radiation Therapy in Favorable Stage IA Merkel Cell Carcinoma by Parvathaneni, U, Takagishi, S, Marx, T, Lewis, C, Shantha, E, Blom, A, Iyer, J, Fu, T, Liao, J.J, Tseng, Y.D, Nghiem, P

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Near-field photoluminescence study of GaNAs alloy epilayer at room and cryogenic temperature by Matsuda, K., Saiki, T., Takahashi, M., Moto, A., Takagishi, S.

“…We have measured the spatial distribution of the optical properties of a GaNAs (N∼0.8%) epilayer to investigate the carrier recombination mechanism at both…”
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Photoluminescence properties of localized states caused by nitrogen alloying in a GaInNAs/GaAs single quantum well by Nomura, K., Yamada, T., Iguchi, Y., Takagishi, S., Nakayama, M.

“…We have investigated photoluminescence (PL) properties of localized states induced by nitrogen alloying in a Ga 1− x In x N y As 1− y /GaAs single quantum well…”
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Optical characterization of improvement of carrier localization in InGaAsN/GaAs single quantum wells by addition of Sb flux to interfaces by Iguchi, Y., Ishizuka, T., Yamada, T., Takagishi, S., Nomura, K., Nakayama, M.

“…We have investigated effects of a trimethylantimony (TMSb) flow to the interface between GaAs buffer layer and InGaAsN quantum-well layer on localization of…”
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Hydrogen and carbon incorporation in GaInNAs by Moto, A, Takahashi, M, Takagishi, S

“…We have investigated the dependence of impurity incorporation of GaInNAs on the In concentration, substrate orientation, and growth temperature by secondary…”
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Spatial distribution of deep level traps in GaNAs crystals by Tanaka, So, Moto, A, Takahashi, M, Tanabe, T, Takagishi, S

“…GaNAs crystals grown by the metalorganic vapor-phase epitaxy (MOVPE) method are characterized by plane-view electron beam induced current (EBIC) and deep-level…”
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Localization characteristics of photoluminescence decay dynamics in an InxGa1−xAs1−yNy/GaAs single quantum well by Nakayama, M., Tokuoka, K., Nomura, K., Yamada, T., Moto, A., Takagishi, S.

“…We have investigated photoluminescence (PL) properties of an InxGa1−xAs1−yNy/GaAs single quantum well from an aspect of carrier localization. The sample was…”
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Raman characterization of lattice-matched GaInAsN layers grown on GaAs (0 0 1) substrates by Hashimoto, A, Kitano, T, Nguyen, A.K, Masuda, A, Yamamoto, A, Tanaka, S, Takahashi, M, Moto, A, Tanabe, T, Takagishi, S

“…First systematic Raman scattering characterization for the nearly lattice-matched GaInAsN layers has been discussed to investigate the local structural changes…”
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0632 Early sleep-disordered breathing in moderate-to-severe traumatic brain injury (TBI) is linked with chronic pain status at long-term follow-up: A TBI Model Systems study by Martin, Aaron, Tang, Xinyu, Pinto, Shanti, Hoffman, Jeanne, Schwartz, Daniel, Wittine, Lara, Walker, William, Kane, Georgia, Takagishi, S, Nakase-Richardson, Risa

“…Abstract Introduction Sleep disorders and chronic pain (pain of >3 months duration) are common after traumatic brain injury (TBI). A recently completed…”
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An Environmental Scan to Identify Current Chronic Pain Treatment Practices for Persons with Traumatic Brain Injury by Cotner, Bridget, Ching, Deveney, Nakase-Richardson, Risa, Murphy, Jennifer, Martin, Aaron, Takagishi, S. Curtis, Kane, Georgia, Scott, Steven, Hoffman, Jeanne

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COVID-19 Impact on Delivery of Rehabilitation For Persons With Traumatic Brain Injury by Cotner, Bridget, Nakase-Richardson, Risa, Agtarap, Stephanie, Martin, Aaron, Takagishi, S. Curtis, Rabinowitz, Amanda, Ching, Deveney, O'Connor, Danielle R., Hoffman, Jeanne

“…To describe how the COVID-19 pandemic influenced treatment practices for chronic pain in persons with traumatic brain injury (TBI) and facilitators and…”
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0629 Correlates of sleep quality among individuals with chronic pain after moderate to severe traumatic brain injury by Martin, Aaron, Almeida, Emily J, Hoffman, Jeanne M, Pinto, Shanti M, Walker, William C, Douglas, Megan E, Wittine, Lara, Schwartz, Daniel J, Takagishi, S Curtis, Kane, Georgia, Nakase-Richardson, Risa

“…Abstract Introduction Sleep disturbance and chronic pain are very common after moderate to severe traumatic brain injury (msTBI). Despite having a…”
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0674 The role of PTSD symptoms in the relationship between sleep quality and pain following Moderate-to-Severe Traumatic Brain Injury by Martin, Aaron, Rudd, Robert, Luongo, Kristen, Almeida, Emily J, Hoffman, Jeanne M, Pinto, Shanti M, Walker, William, Douglas, Megan E, Wittine, Lara, Schwartz, Daniel J, Takagishi, S Curtis, Kane, Georgia, Nakase-Richardson, Risa

“…Abstract Introduction Poor sleep quality and chronic pain are common after moderate-to-severe traumatic brain injury (msTBI). Prior studies have not examined…”
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InGaP/GaAs and InGaAs mechanically-stacked triple-junction solar cells by Takamoto, T., Ikeda, E., Agui, T., Kurita, H., Tanabe, T., Tanaka, S., Matsubara, H., Mine, Y., Takagishi, S., Yamaguchi, M.

“…Triple-junction cells with AM1.5 efficiencies of over 33% have been demonstrated. A planar type InGaP/GaAs monolithic dual-junction cell was fabricated on a…”
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Origin of non-radiative center of GaInNAs grown by MOVPE by Yamada, T., Ishizuka, T., Sawamura, A., Iguchi, Y., Saito, T., Katsuyama, T., Takagishi, S., Nomura, K., Nakayama, M.

“…The origins of non-radiative centers of GaInNAs grown by metalorganic vapor phase epitaxy (MOVPE) are discussed. The relations of the photoluminescence (PL)…”
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High-radiation-resistant InGaP, InGaAsP, and InGaAs solar cells for multijuction solar cells by Dharmarasu, Nethaji, Yamaguchi, Masafumi, Khan, Aurangzeb, Yamada, Takashi, Tanabe, Tatsuya, Takagishi, Shigenori, Takamoto, Tatsuya, Ohshima, Takeshi, Itoh, Hisayoshi, Imaizumi, Mitsuru, Matsuda, Sumio

“…The radiation response of 3 MeV proton-irradiated InGaP, InGaAsP and InGaAs solar cells was measured and analyzed in comparison with those of InP and GaAs. The…”
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GaAs solar cell with GaInP window grown by all metalorganic source MOVPE by Matsubara, H., Tanabe, T., Saegusa, A., Takagishi, S., Shirakawa, T.

“…Tertiarybutylarsine (tBAs) and tertiarybutylphosphine (tBP) are expected as safe alternatives to conventional hazardous hydrides, AsH/sub 3/ and PH/sub 3/. We…”
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Stretched exponential profiles of photoluminescence decays related to localized states in InGaAsN/GaAs single-quantum wells by Nakayama, M., Iguchi, Y., Nomura, K., Hashimoto, J., Yamada, T., Takagishi, S.

“…We have investigated photoluminescence (PL) dynamics related to localized states in In x Ga 1− x As 1− y N y /GaAs single-quantum wells (SQWs) with the…”
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