Search Results - "Tai-Chin Lo"
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1
Emitter-ballasting-resistor-free SiGe microwave power heterojunction bipolar transistor
Published in IEEE electron device letters (01-07-1999)“…The emitter ballasting resistor is used to equalize the current distribution between the emitter stripes in power transistor, but it will degrade the output…”
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Journal Article -
2
Reaction mechanism of selective plating between TiW and Au:An innovative metallization scheme for high-speed electronics
Published in Japanese Journal of Applied Physics (1996)“…In our previous letter, we presented a novel fabrication process which allows us to form submicron gold interconnections with high aspect ratio. The process…”
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Journal Article -
3
Optimization of a novel self-planarizing Au metallization process for practical VLSI applications
Published in Japanese Journal of Applied Physics (1996)“…A self-planarizing Au metallization process by selective electrolytic plating was developed for metal interconnections in the submicron range. Problems still…”
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Journal Article -
4
Effects of Oxygen Addition in the CCl 4 Reactive Ion Etching of a-SiC:H Films
Published in Japanese Journal of Applied Physics (01-12-1992)“…We have studied the effects of oxygen addition in the CCl 4 reactive ion etching of hydrogenated amorphous silicon carbide (a-SiC:H) films. The effects of…”
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Journal Article -
5
Downsizing gold wires to submicron range : a self-planarized Au metallization process by selective electroplating for Si LSI applications
Published in Japanese Journal of Applied Physics (1995)“…A self-planarized Au metallization process by electrolytic plating has been developed for metal interconnections in the submicron range. Gold wires with…”
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Journal Article -
6
Cross-sectional transmission electron microscopy study of Si/SiGe heterojunction bipolar transistor structure grown by ultra-high vacuum chemical vapor deposition
Published in Japanese Journal of Applied Physics (01-07-1997)“…Si/SiGe heterojunction bipolar transistor (HBT) structure, grown by ultra-high vacuum chemical vapor deposition (UHVCVD), was investigated with cross-sectional…”
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Journal Article -
7
Fabrication of a novel oxygen sensor with CMOS compatible processes
Published in Sensors and actuators. B, Chemical (15-02-1998)“…A novel miniature dissolved oxygen sensor as a transducer for medical and environmental measurements is fabricated with a CMOS compatible process. The sensor…”
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Journal Article -
8
Characterization of SiGe base layer in Si/SiGe heterojunction bipolar transistor layer structure
Published in Thin solid films (23-11-1998)“…Si/SiGe heterojunction bipolar transistor (HBT) layer structures, grown by ultra high vacuum chemical vapor deposition (UHVCVD), were investigated by high…”
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Journal Article -
9
High-quality n-Si/i-p+-i SiGe/n-Si structure grown by ultra high vacuum chemical molecular epitaxy
Published in Journal of materials science. Materials in electronics (01-09-1999)“…The n-Si/i-p^sup +^-i SiGe/n-Si structure was grown by ultra high vacuum chemical molecular epitaxy, and analysed by high resolution X-ray diffraction,…”
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Journal Article -
10
Effects of oxygen addition in the CCl4 reactive ion etching of a-SiC:H films
Published in Japanese journal of applied physics (1992)Get full text
Journal Article -
11
High-quality n-Si/i-p super(+)-i SiGe/n-Si structure grown by ultra high vacuum chemical molecular epitaxy
Published in Journal of materials science. Materials in electronics (01-09-1999)“…The n-Si/i-p super(+)-i SiGe/n-Si structure was grown by ultra high vacuum chemical molecular epitaxy, and analysed by high resolution X-ray diffraction,…”
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Journal Article -
12
Effects of oxygen addition in the CCl sub(4) reactive ion etching of a-SiC:H films
Published in JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE (01-01-1992)“…We have studied the effects of oxygen addition in the CCl sub(4) reactive ion etching of hydrogenated amorphous silicon carbide (a-SiC:H) films. The effects of…”
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Journal Article -
13
Fabrication of gated wedge-shaped field emitter array by plasma etching and gold plating
Published in 1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings (1995)“…A gated wedge-shaped field emitter has been fabricated by anisotropic etching and gold plating. The structure displays high emitter aspect ratio, sharp emitter…”
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Conference Proceeding
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14
900 MHz 7.4 W SiGe heterojunction bipolar transistor
Published in Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) (1999)“…The SiGe heterojunction bipolar transistor (HBT) suitable for microwave power applications was fabricated by a simple planar process compatible with Si…”
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Conference Proceeding -
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On the intrinsic spacer layer in Si/SiGe heterojunction bipolar transistor grown by ultra high vacuum chemical vapor deposition
Published in 1997 Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits (1997)“…In this paper, we report the study on the intrinsic SiGe spacer layer in Si/SiGe HBT and a novel phenomenon in Si/SiGe HBT layer structure grown by ultra high…”
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Conference Proceeding -
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DYNAMICS OF DISSOCIATIVE CHEMISORPTION: METHANE ON TUNGSTEN SINGLE CRYSTAL SURFACES
Published 1983“…Chemisorption of simple molecular gases on clean metal surfaces is usually rapid, with vanishingly small activation energies and large sticking coefficients…”
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Dissertation -
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DYNAMICS OF DISSOCIATIVE CHEMISORPTION: METHANE ON TUNGSTEN SINGLE CRYSTAL SURFACES
Published 01-01-1983“…Chemisorption of simple molecular gases on clean metal surfaces is usually rapid, with vanishingly small activation energies and large sticking coefficients…”
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Dissertation