Search Results - "Taft, R C"

A 100-MS/s 8-b CMOS subranging ADC with sustained parametric performance from 3.8 V down to 2.2 V by Taft, R.C., Tursi, M.R.

“…A 100-MS/s 8-b CMOS analog-to-digital converter (ADC) designed for very low supply voltage and power dissipation is presented. This single-ended-input ADC is…”
Get full text

A 1.8 V 1.0 GS/s 10b Self-Calibrating Unified-Folding-Interpolating ADC With 9.1 ENOB at Nyquist Frequency by Taft, Robert C., Francese, Pier Andrea, Tursi, Maria Rosaria, Hidri, Ols, MacKenzie, Alan, Hohn, Tobias, Schmitz, Philipp, Werker, Heinz, Glenny, Andrew

“…An advance in folding-interpolating analog-to-digital converters (ADCs) is demonstrated which simplifies their extension to higher resolution by building the…”
Get full text

A 1.8-V 1.6-GSample/s 8-b self-calibrating folding ADC with 7.26 ENOB at Nyquist frequency by Taft, R.C., Menkus, C.A., Tursi, M.R., Hidri, O., Pons, V.

“…This study demonstrates for the first time the significant performance enhancement that calibration brings to folding-interpolating analog-to-digital…”
Get full text

Demonstration of a p-channel BICFET in the GexSi1-x/Si system by TAFT, R. C, PLUMMER, J. D, IYER, S. S

Get full text

A quadruple well, quadruple polysilicon BiCMOS process for fast 16 Mb SRAM's by Hayden, J.D., Taft, R.C., Kenkare, P., Mazure, C., Gunderson, C., Nguyen, B.-Y., Woo, M., Lage, C., Roman, B.J., Radhakrishna, S., Subrahmanyan, R., Sitaram, A.R., Pelley, P., Lin, J.-H., Kemp, K., Kirsch, H.

“…An advanced, high-performance, quadruple well, quadruple polysilicon BiCMOS technology has been developed for fast 16 Mb SRAM's. A split word-line bitcell…”
Get full text

The SCC BJT: a high-performance bipolar transistor compatible with high-density deep-submicrometer BiCMOS SRAM technologies by Taft, R.C., Lage, C.S., Hayden, J.D., Kirsch, H.C., Lin, J.-H., Denning, D.J., Shapiro, F.B., Bockelman, D.E., Camilleri, N.

“…We present the process development and device characterization of the Selectively Compensated Collector (SCC) BJT specifically designed for high-density…”
Get full text

An eight-terminal Kelvin-tapped bipolar transistor for extracting parasitic series resistances by Taft, R.C., Plummer, J.D.

“…A novel DC method for determining the components of series resistance in bipolar transistors is presented. As a DC technique, it shows unprecedented accuracy…”
Get full text

Design techniques for very low power ADCs by Taft, R.C., Tursi, M.R., Glenny, A.

“…The three low-power ADC techniques of interleaving-by-4 with an amplifier reset and master sampling clock, using self-regulating CMOS push-pull amplifiers, and…”
Get full text

Very-low RF noise and high-performance (4.8 fJ) bipolar device in a 0.35 mu m high-density BiCMOS SRAM technology by Taft, R C, Lin, J-H, Shapiro, F, Bockelman, D, Camilleri, N

“…This article presents RF and CML performance of a bipolar device integrated into a high-density 0.35 mu m BiCMOS technology specifically designed for fast…”
Get full text

A scaled, high-performance (4.5 fJ) bipolar device in a 0.35 μm high-density BiCMOS SRAM technology by Taft, R.C., Hayden, J.D.

“…We present the performance improvements obtained both by scaling the Selectively Compensated Collector (SCC) BJT and by using a modified Current-Mode Logic…”
Get full text

GexSi1-x/silicon inversion-base transistors : theory of operation by TAFT, R. C, PLUMMER, J. D

Get full text

GexSi1-x/silicon inversion-base transistors : experimental demonstration by TAFT, R. C, PLUMMER, J. D, IYER, S. S

Get full text

A 1.8V 1.0GS/s 10b self-calibrating unified-folding-interpolating ADC with 9.1 ENOB at Nyquist frequency by Taft, R.C., Francese, P.A., Tursi, M.R., Hidri, O., MacKenzie, A., Hoehn, T., Schmitz, P., Werker, H., Glenny, A.

“…An advance in folding-interpolating ADCs is presented that simplifies their extension to higher resolution by building the converter out of identical but…”
Get full text

Reversibility of clip sterilizations by Hulka, J F, Noble, A D, Letchworth, A T, Lieberman, B, Owen, E, Gomel, V, Taft, R C, Haney, A F, Wheeless, C R, Imrie, A H, Winston, R L, Loeffler, F E

Get more information

A scaled, high-performance (4.5 fJ) bipolar device in a 0.35 mu mhigh-density BiCMOS SRAM technology by Taft, R C, Hayden, J D

“…We present the performance improvements obtained both by scaling the Selectively Compensated Collector (SCC) BJT and by using a modified Current-Mode Logic…”
Get full text

Ge(x)Si(1-x)/silicon inversion-base transistors: theory of operation by Taft, R C, Plummer, J D

“…A theoretical study of the device characteristics of the Ge(x )Si(1-x)/silicon inversion-base transistor (BICFET) is presented. This transistor uses the space…”
Get full text

Ge(x)Si(1-x)/silicon inversion-base transistors:experimental demonstration by Taft, R C, Plummer, J D, Iyer, S S

“…The fabrication, material characterization, and electrical evaluation of the p-channel Ge(x)Si(1-x)/silicon inversion-base transistor (BICFET) are described…”
Get full text

Demonstration of a p-channel BICFET in the Ge sub(x)Si sub(1-x)/Si system by Taft, R C, Plummer, J D, Iyer, S S

“…The first operational bipolar inversion-channel field-effect transistors (BICFET's) based on the Ge sub(x)Si sub(1-x)/Si system have been successfully…”
Get full text

Demonstration of a p-channel BICFET in the Ge(x)Si(1-x)/Si system ((bipolar inversion-channel field effect transitors)) by Taft, R C, Plummer, J D, Iyer, S S

“…Operational bipolar inversion-channel field-effect transistors (BICFETs) based on the Ge(x)Si(1-x)/Si system are discussed. The 300 K current gain of beta =…”
Get full text

A novel DC measurement method for the accurate extraction of bipolar resistive parasitics by Taft, R.C., Plummer, J.D.

“…A novel DC method for determining the components of series resistance in bipolar transistors is presented. As a DC technique, it shows unprecedented accuracy…”
Get full text