Search Results - "Tae-Yon Lee"

Fullerene thermal insulation for phase change memory by Kim, Cheolkyu, Suh, Dong-Seok, Kim, Kijoon H. P., Kang, Youn-Seon, Lee, Tae-Yon, Khang, Yoonho, Cahill, David G.

“…Phase change random access memory (PRAM) is unique among semiconductor devices because heat is intrinsic to the operation of the device, not just a by-product…”
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A Time-of-Flight 3-D Image Sensor With Concentric-Photogates Demodulation Pixels by Tae-Yon Lee, Yong-Jei Lee, Dong-Ki Min, Seung-Hoon Lee, Wang-Hyun Kim, Jung-Kyu Jung, Ovsiannikov, Ilia, Young-Gu Jin, Yoondong Park, Fossum, Eric R.

“…In this paper, we develop pixels with concentric-photogates for applications in time-of-flight 3-D image sensors with single-tap architecture. The pixel uses a…”
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Growth and surface alloying of Fe on Pt(9 9 7) by Lee, Tae-Yon, Sarbach, Samuel, Kuhnke, Klaus, Kern, Klaus

“…The growth of ultra-thin layers of Fe on the vicinal Pt(9 9 7) surface is studied by thermal energy He atom scattering (TEAS) and Auger Electron Spectroscopy…”
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Rapid crystallization of GeTe–Bi2Te3 mixed layer by Lee, Tae-Yon, Kim, Cheolkyu, Kang, Younseon, Suh, Dong-Seok, Kim, Kijoon H. P., Khang, Yoonho

“…We report rapid crystallization of GeTe–Bi2Te3 mixed layers. The as-deposited (GeTe)1−x(Bi2Te3)x (GBT) layers with x>0.5 are fcc crystalline, while the layers…”
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Effect of indium on phase-change characteristics and local chemical states of In-Ge-Sb-Te alloys by Shin, H. J., Kang, Youn-Seon, Benayad, Anass, Kim, Ki-Hong, Lee, Y. M., Jung, M.-C., Lee, Tae-Yon, Suh, Dong-Seok, Kim, Kijoon H. P., Kim, CheolKyu, Khang, Yoonho

“…We introduce single-phase In-Ge-Sb-Te (IGST) quaternary thin film (fcc structure when crystallized) deposited by cosputtering from Ge 2 Sb 2 Te 5 ( GST ) and…”
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Organic-on-silicon complementary metal–oxide–semiconductor colour image sensors by Lim, Seon-Jeong, Leem, Dong-Seok, Park, Kyung-Bae, Kim, Kyu-Sik, Sul, Sangchul, Na, Kyoungwon, Lee, Gae Hwang, Heo, Chul-Joon, Lee, Kwang-Hee, Bulliard, Xavier, Satoh, Ryu-Ichi, Yagi, Tadao, Ro, Takkyun, Im, Dongmo, Jung, Jungkyu, Lee, Myungwon, Lee, Tae-Yon, Han, Moon Gyu, Jin, Yong Wan, Lee, Sangyoon

“…Complementary metal–oxide–semiconductor (CMOS) colour image sensors are representative examples of light-detection devices. To achieve extremely high…”
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Thin film alloy mixtures for high speed phase change optical storage: A study on (Ge1Sb2Te4)1−x(Sn1Bi2Te4)x by Lee, Tae-Yon, Kim, Ki-Bum, Cheong, Byung-ki, Lee, Taek Sung, Park, Sung Jin, Lee, Kyeong Seok, Kim, Won Mok, Kim, Soon Gwang

“…An approach is proposed to develop recording materials for high speed phase change optical data storage. It utilizes a thin film alloy mixture between a…”
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Direct evidence of phase separation in Ge2Sb2Te5 in phase change memory devices by Kim, Cheolkyu, Kang, Dongmin, Lee, Tae-Yon, Kim, Kijoon H. P., Kang, Youn-Seon, Lee, Junho, Nam, Sung-Wook, Kim, Ki-Bum, Khang, Yoonho

“…Phase change materials in phase change random access memory (PRAM) undergo very high electrical stress as well as thermal stress during operation. These can…”
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Thermoelectric heating of Ge2Sb2Te5 in phase change memory devices by Suh, Dong-Seok, Kim, Cheolkyu, Kim, Kijoon H. P., Kang, Youn-Seon, Lee, Tae-Yon, Khang, Yoonho, Park, Tae Sang, Yoon, Young-Gui, Im, Jino, Ihm, Jisoon

“…We report on the demonstration of the active thermoelectric application to nanometer-scaled semiconductor devices. The thermoelectric heating already exists…”
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Optical properties of (GeTe, Sb2Te3) pseudobinary thin films studied with spectroscopic ellipsometry by Park, Jun-Woo, Baek, Seoung Ho, Kang, Tae Dong, Lee, Hosun, Kang, Youn-Seon, Lee, Tae-Yon, Suh, Dong-Seok, Kim, Ki Joon, Kim, Cheol Kyu, Khang, Yoon Ho, Da Silva, Juarez L. F., Wei, Su-Huai

“…The authors measure the dielectric functions of (GeTe, Sb2Te3) pseudobinary thin films by using spectroscopic ellipsometry. By using standard critical point…”
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Low thermal conductivity in Ge2Sb2Te5–SiOx for phase change memory devices by Lee, Tae-Yon, Kim, Kijoon H. P., Suh, Dong-Seok, Kim, Cheolkyu, Kang, Youn-Seon, Cahill, David G., Lee, Dongbok, Lee, Min-Hyun, Kwon, Min-Ho, Kim, Ki-Bum, Khang, Yoonho

“…Nanometer scale Ge2Sb2Te5 (GST) domains formed by immiscible mixture of GST-SiOx at room temperature and 180 °C show remarkable suppression in electrical and…”
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High Speed Phase Change Random Access Memory with (Ge 1 Sb 2 Te 4 ) 0.9 (Sn 1 Bi 2 Te 4 ) 0.1 Complete Solid Solution by Ahn, Dong-Ho, Lee, Tae-Yon, Lee, Dong-Bok, Yim, Sung-Soo, Wi, Jung-Sub, Jin, Kyung-Bae, Lee, Min-Hyun, Kim, Ki-Bum, Kang, Dae-Hwan, Jeong, Han-ju, Cheong, Byung-ki

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Valence band structures of the phase change material Ge2Sb2Te5 by Lee, Dohyun, Lee, Sang Sun, Kim, Wondong, Hwang, Chanyong, Hossain, M. B., Hung, Ngyuen Le, Kim, Hyojin, Kim, C. G., Lee, Hangil, Hwang, Han Na, Hwang, Chan-Cuk, Lee, Tae-Yon, Kang, Younseon, Kim, Cheolkyu, Suh, Dong-Seok, Kim, Kijoon H. P., Khang, Yoonho

“…We report the experimental evidence of significant change of the valence band structure during crystallization of Ge2Sb2Te5 (GST). Amorphous GST, prepared by…”
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Phase separation behavior of Ge2Sb2Te5 line structure during electrical stress biasing by Nam, Sung-Wook, Kim, Cheolkyu, Kwon, Min-Ho, Lee, Hyo-Sung, Wi, Jung-Sub, Lee, Dongbok, Lee, Tae-Yon, Khang, Yoonho, Kim, Ki-Bum

“…We report the breakdown behavior of a patterned Ge2Sb2Te5 multiline structure during the voltage-driven electric stress biasing. Scanning Auger microscope…”
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Perspectives on 3D ToF sensor SoC integration for user interface application by Tae-Yon Lee, Jung-Kyu Jung, Dong-Ki Min, Yoondong Park, Kwanghyuk Bae, Tae-Chan Kim

“…System-on-a-chip integration of three dimensional time-of-flight image sensor invokes several technical issues, which are different from the case of…”
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Hierarchical structure and phase transition of ( GeTe ) n ( Sb 2 Te 3 ) m used for phase-change memory by Im, Jino, Eom, Jae-Hyeon, Park, Changwon, Park, Kimin, Suh, Dong-Seok, Kim, Kijoon, Kang, Youn-Seon, Kim, Cheolkyu, Lee, Tae-Yon, Khang, Yoonho, Yoon, Young-Gui, Ihm, Jisoon

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Separate domain formation in Ge2Sb2Te5–SiOx mixed layer by Lee, Tae-Yon, Yim, Sung-Soo, Lee, Dongbok, Lee, Min-Hyun, Ahn, Dong-Ho, Kim, Ki-Bum

“…We report separate domain formation in cosputtered Ge2Sb2Te5–SiOx mixed layer, with SiOx amount less than 10mol%. As-prepared Ge2Sb2Te5–SiOx layer exhibits…”
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Thermoelectric heating of Ge 2 Sb 2 Te 5 in phase change memory devices by Suh, Dong-Seok, Kim, Cheolkyu, Kim, Kijoon H. P., Kang, Youn-Seon, Lee, Tae-Yon, Khang, Yoonho, Park, Tae Sang, Yoon, Young-Gui, Im, Jino, Ihm, Jisoon

“…We report on the demonstration of the active thermoelectric application to nanometer-scaled semiconductor devices. The thermoelectric heating already exists…”
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Rapid crystallization of Ge Te - Bi 2 Te 3 mixed layer by Lee, Tae-Yon, Kim, Cheolkyu, Kang, Younseon, Suh, Dong-Seok, Kim, Kijoon H. P., Khang, Yoonho

“…We report rapid crystallization of Ge Te - Bi 2 Te 3 mixed layers. The as-deposited ( Ge Te ) 1 − x ( Bi 2 Te 3 ) x (GBT) layers with x > 0.5 are fcc…”
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Direct evidence of phase separation in Ge 2 Sb 2 Te 5 in phase changememory devices by Kim, Cheolkyu, Kang, Dongmin, Lee, Tae-Yon, Kim, Kijoon H. P., Kang, Youn-Seon, Lee, Junho, Nam, Sung-Wook, Kim, Ki-Bum, Khang, Yoonho

“…Phase change materials in phase change random access memory (PRAM) undergo very high electrical stress as well as thermal stress during operation. These can…”
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