Search Results - "Tackhwi Lee"

Reduced Gate-Leakage Current and Charge Trapping Characteristics of Dysprosium-Incorporated \hbox Gate-Oxide n-MOS Devices by Tackhwi Lee, Banerjee, S K

“…The higher effective barrier height of Dy 2 O 3 , which is around 2.32 eV calculated from the Fowler-Nordheim plot, accounts for the reduced leakage current in…”
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Investigation of transient relaxation under static and dynamic stress in Hf-based gate oxides by Akbar, M.S., Changhwan Choi, Se Jong Rhee, Krishnan, S.A., Chang Yong Kang, Man Hong Zhang, Tackhwi Lee, Ok, I., Feng Zhu, Hyoung-Sub Kim, Lee, J.C.

“…Transient relaxation, which has been addressed as an undesirable issue in high-k alternate gate dielectrics, has been studied systematically. In Hf-based…”
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Hafnium Titanate bilayer structure multimetal dielectric nMOSCAPs by Se Jong Rhee, Feng Zhu, Hyoung-Sub Kim, Chang Hwan Choi, Chang Yong Kang, Manhong Zhang, Tackhwi Lee, Ok, I., Krishnan, S.A., Lee, J.C.

“…A novel approach of fabricating laminated TiO/sub 2//HfO/sub 2/ bilayer multimetal oxide dielectric has been developed for high-performance CMOS applications…”
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Systematic analysis of silicon oxynitride interfacial layer and its effects on electrical characteristics of high-k HfO2 transistor by Rhee, Se Jong, Zhu, Feng, Kim, Hyoung-Sub, Kang, Chang Yong, Choi, Chang Hwan, Zhang, Manhong, Lee, Tackhwi, Ok, Injo, Krishnan, Siddarth A., Lee, Jack C.

“…High-k hafnium oxide dielectric metal-oxide-semiconductor field-effect transistors with several physical thicknesses of silicon oxynitride interfacial layers…”
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Structural advantage for the EOT scaling and improved electron channel mobility by incorporating dysprosium oxide (Dy/sub 2/O/sub 3/) into HfO/sub 2/ n-MOSFETs by Tackhwi Lee, Se Jong Rhee, Chang Yong Kang, Feng Zhu, Hyoung-sub Kim, Changhwan Choi, Ok, I., Manhong Zhang, Krishnan, S., Thareja, G., Lee, J.C.

“…A structural approach of fabricating laminated Dy 2 O 3 -incorporated HfO 2 multimetal oxide dielectric has been developed for high-performance CMOS…”
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Metal gate-HfO/sub 2/ MOS structures on GaAs substrate with and without Si interlayer by Ok, I., Hyoung-sub Kim, Manhong Zhang, Chang-Yong Kang, Se Jong Rhee, Changhwan Choi, Krishnan, S.A., Tackhwi Lee, Feng Zhu, Thareja, G., Lee, J.C.

“…In this letter, we studied the effects of post-deposition anneal (PDA) time and Si interface control layer (ICL) on the electrical characteristics of the MOS…”
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Aggressively scaled ultra thin undoped HfO/sub 2/ gate dielectric (EOT<0.7 nm) with TaN gate electrode using engineered interface layer by Changhwan Choi, Chang-Yong Kang, Se Jong Rhee, Akbar, M.S., Krishnan, S.A., Manhong Zhang, Hyoung-Sub Kim, Tackhwi Lee, Ok, I., Feng Zhu, Lee, J.C.

“…The ultrathin HfO/sub 2/ gate dielectric (EOT<0.7 nm) has been achieved by using a novel "oxygen-scavenging effect" technique without incorporation of nitrogen…”
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Reduced Gate-Leakage Current and Charge Trapping Characteristics of Dysprosium-Incorporated [Formula Omitted] Gate-Oxide n-MOS Devices by Lee, Tackhwi, Banerjee, Sanjay K

“…The higher effective barrier height of [Formula Omitted], which is around 2.32 eV calculated from the Fowler-Nordheim plot, accounts for the reduced leakage…”
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Reduced Gate-Leakage Current and Charge Trapping Characteristics of Dysprosium-Incorporated hbox HfO 2 Gate-Oxide n-MOS Devices by Lee, Tackhwi, Banerjee, Sanjay K

“…The higher effective barrier height of hbox Dy 2 hbox O 3 , which is around 2.32 eV calculated from the Fowler-Nordheim plot, accounts for the reduced leakage…”
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Reduced Gate-Leakage Current and Charge Trapping Characteristics of Dysprosium-Incorporated Hf02 Gate-Oxide n-MOS Devices by LEE, Tackhwi, BANERJEE, Sanjay K

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Metal gate-HfO2 metal-oxide-semiconductor capacitors on n-GaAs substrate with silicon/germanium interfacial passivation layers by Kim, Hyoung-Sub, Ok, Injo, Zhang, Manhong, Lee, Tackhwi, Zhu, Feng, Yu, Lu, Lee, Jack C.

“…In this letter, the authors present the capacitance-voltage and current-voltage characteristics of TaN∕HfO2∕n-GaAs metal-oxide-semiconductor capacitors with…”
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Space Program Scheme for 3-D NAND Flash Memory Specialized for the TLC Design by Kang, Ho-Jung, Choi, Nagyong, Lee, Dong Hwan, Lee, Tackhwi, Chung, Sungyong, Bae, Jong-Ho, Park, Byung-Gook, Lee, Jong-Ho

“…A new space program (PGM) scheme is proposed to achieve reliable triple-level-cell (TLC) 3-D NAND flash memory. Considering the lateral diffusion issue of…”
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Ultrathin HfO2 (equivalent oxide thickness=1.1nm) metal-oxide-semiconductor capacitors on n-GaAs substrate with germanium passivation by Kim, Hyoung-Sub, Ok, Injo, Zhang, Manhong, Choi, Changhwan, Lee, Tackhwi, Zhu, Feng, Thareja, Gaurav, Yu, Lu, Lee, Jack C.

“…We present the capacitance-voltage characteristics of TaN∕HfO2∕n-GaAs metaloxide-semiconductor capacitors, with an equivalent oxide thickness (EOT) of 10.9Å,…”
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Neuromorphic Technology Based on Charge Storage Memory Devices by Lee, Sung-Tae, Lim, Suhwan, Choi, Nagyong, Bae, Jong-Ho, Kim, Chul-Heung, Lee, Soochang, Lee, Dong Hwan, Lee, Tackhwi, Chung, Sungyong, Park, Byung-Gook, Lee, Jong-Ho

“…Four synaptic devices are introduced for spiking neural networks (SNNs) and deep neural networks (DNNs). Unsupervised learning is successfully demonstrated by…”
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Metal Gate-HfO2 MOS structures on GaAs substrate with and without Si interlayer by OK, Injo, KIM, Hyoung-Sub, LEE, Jack C, MANHONG ZHANG, KANG, Chang-Yong, SE JONG RHEE, CHOI, Changhwan, KRISHNAN, Siddarth A, LEE, Tackhwi, FENG ZHU, THAREJA, Gaurav

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Structural advantage for the EOT scaling and improved electron channel mobility by incorporating dysprosium oxide (Dy2O3) into HfO2 n-MOSFETs by LEE, Tackhwi, SE JONG RHEE, LEE, Jack C, CHANG YONG KANG, FENG ZHU, KIM, Hyoung-Sub, CHOI, Changhwan, OK, Injo, MANHONG ZHANG, KRISHNAN, Siddarth, THAREJA, Gaurav

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Metal gate- Hf O 2 metal-oxide-semiconductor capacitors on n - Ga As substrate with silicon/germanium interfacial passivation layers by Kim, Hyoung-Sub, Ok, Injo, Zhang, Manhong, Lee, Tackhwi, Zhu, Feng, Yu, Lu, Lee, Jack C.

“…In this letter, the authors present the capacitance-voltage and current-voltage characteristics of Ta N ∕ Hf O 2 ∕ n - Ga As metal-oxide-semiconductor…”
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Ultrathin Hf O 2 (equivalent oxide thickness = 1.1 nm )metal-oxide-semiconductor capacitors on n - Ga As substrate with germanium passivation by Kim, Hyoung-Sub, Ok, Injo, Zhang, Manhong, Choi, Changhwan, Lee, Tackhwi, Zhu, Feng, Thareja, Gaurav, Yu, Lu, Lee, Jack C.

“…We present the capacitance-voltage characteristics of Ta N ∕ Hf O 2 ∕ n - Ga As metal oxide-semiconductor capacitors, with an equivalent oxide thickness (EOT)…”
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Aggressively scaled ultrathin undoped HfO2 gate dielectric (EOT < 0.7 nm) with TaN gate electrode using engineered interface layer by CHOI, Changhwan, KANG, Chang-Yong, LEE, Jack C, SE JONG RHEE, AKBAR, Mohammad Shahariar, KRISHNAN, Siddarth A, MANHONG ZHANG, KIM, Hyoung-Sub, LEE, Tackhwi, OK, Injo, FENG ZHU

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Systematic analysis of silicon oxynitride interfacial layerand its effects on electrical characteristics of high- k Hf O 2 transistor by Rhee, Se Jong, Zhu, Feng, Kim, Hyoung-Sub, Kang, Chang Yong, Choi, Chang Hwan, Zhang, Manhong, Lee, Tackhwi, Ok, Injo, Krishnan, Siddarth A., Lee, Jack C.

“…High- k hafnium oxide dielectric metal-oxide-semiconductor field-effect transistors with several physical thicknesses of silicon oxynitride interfacial layers…”
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