Search Results - "Tachi, Shin’ichi"

Deposition in dry-etching gas plasmas by ARAI, S, TSUJIMOTO, K, TACHI, S

“…Polymer deposition on Si and SiO 2 surfaces has been investigated in CH 2 F 2 , CHF 3 , CF 4 , and CHClF 2 gas plasmas, using a microwave plasma etching…”
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Estimation of ion incident angle from Si etching profiles by GOTOH, Y, KURE, T, TACHI, S

“…The distribution of angles of incident etching ions was measured using a test sample having an overhanging mask structure. The standard deviation of ion…”
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Short‐gas‐residence‐time electron cyclotron resonance plasma etching by Tsujimoto, Kazunori, Kumihashi, Takao, Kofuji, Naoyuki, Tachi, Shin’ichi

“…This paper describes short‐gas‐residence‐time electron cyclotron resonance plasma etching for high etch rates, reduced contamination, and highly anisotropic…”
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Reduction in microloading by high-gas-flow-rate electron cyclotron resonance plasma etching by KOFUJI, N, TSUJIMOTO, K, KUMIHASHI, T, TACHI, S

“…High-gas-flow-rate electron cyclotron resonance plasma etching was employed to reduce microloading in Si etching with Cl 2 at low pressure. Microloading…”
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Low-temperature reactive ion etching and microwave plasma etching of silicon by TACHI, S, TSUJIMOTO, K, OKUDAIRA, S

“…A new low-temperature reactive ion etching and microwave plasma etching method is described. Highly anisotropic silicon etching with extremely small width…”
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Chemical and Physical Roles of Individual Reactive Ions in Si Dry Etching by Tachi, Shin'ichi, Miyake, Kiyoshi, Tokuyama, Takashi

“…Chemical and physical sputtering yields of silicon by fluorocarbon ions such as F + , CF + , CF 2 + , CF 3 + and C + were investigated as a function of…”
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Chemical and Physical Sputtering in F + Ion Beam Etching of Si by Tachi, Shin'ichi, Miyake, Kiyoshi, Tokuyama, Takashi

“…Silicon etching was performed by a mass-selected, low-energy, F + ion beam in an ultrahigh vacuum and the amount of etched Si was measured by the “in situ”…”
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Low-temperature microwave plasma etching of crystalline silicon by TSUJIMOTO, K, OKUDAIRA, S, TACHI, S

“…Low-temperature microwave plasma etching of crystalline silicons is described. Vertical and lateral etch rates of Si and the selectivities of Si to photoresist…”
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Low‐temperature dry etching by Tachi, Shinichi, Tsujimoto, Kazunori, Arai, Shin, Kure, Tokuo

“…Low‐temperature electron‐cyclotron‐resonance microwave plasma etching and reactive ion etching are described for ULSI device fabrication. Highly selective…”
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Novel short-gas-residence-time electron cyclotron resonance plasma etching by TSUJIMOTO, K, KUMIHASHI, T, TACHI, S

“…Novel short-gas-residence-time electron cyclotron resonance (ECR) plasma etching is described. Using a newly equipped high-pumping-rate etching system (5000…”
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Impact of plasma processing on integrated circuit technology migration: From 1 μm to 100 nm and beyond by Tachi, Shinichi

“…Plasma processing has been a key technology for large-volume integrated circuit manufacturing for more than 30 years. In particular, various configurations of…”
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Response to ‘‘Comment on ‘Low-temperature reactive ion etching and microwave plasma etching of silicon’ ’’ [Appl. Phys. Lett. 5 3 , 1665 (1988)] by Tachi, Shinichi, Tsujimoto, Kazunori, Okudaira, Sadayuki

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Low-temperature etching for deep-submicron trilayer resist by KURE, T, KAWAKAMI, H, TACHI, S, ENAMI, H

“…The effects of Cl 2 addition to O 2 plasma used for deep-submicron trilayer resist etching are investigated. The bottom-layer organic resist is etched using a…”
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Electrical properties of focused-ion-beam boron-implanted silicon by TAMURA, M, SHUKURI, S, TACHI, S, ISHITANI, T, TAMURA, H

“…Electrical properties of 16 keV, focused-ion-beam (FIB) (beam diameter: 1 µm, current density: 50 mA/cm 2 ) boron-implanted silicon layers have been…”
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Unusual development of acute compartment syndrome caused by a suction injury: a case report by Tachi, M, Hirabayashi, S, Kuroda, E

“…There have been recent reports of acute compartment syndrome secondary to suction injuries of the hands of children. We report the case of a 68-year-old…”
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Chemical sputtering of silicon by F+, Cl+, and Br+ ions: Reactive spot model for reactive ion etching by Tachi, Shin’ichi, Okudaira, Sadayuki

“…Chemical sputtering yields of silicon resulting from the incidence of isotopically pure 1 9F+, 3 5Cl+, and 8 1Br+ ion beams were measured in the 100–3000 eV…”
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A Two-Dimensional Etching Profile Simulator: ESPRIT by Yamamoto, S., Kure, T., Ohgo, M., Matsuzawa, T., Tachi, S., Sunami, H.

“…A two-dimensional etching simulator named ESPRIT (FOOTNOTE: ESPRIT--Etching Simulation PRogram with an Improved sTring model.) has been developed to simulate…”
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Near-surface interactions and their etching-reaction model in metal plasma-assisted etching by Tachi, Shinichi, Izawa, Masaru, Tsujimoto, Kazunori, Kure, Tokuo, Kofuji, Naoyuki, Suzuki, Keizo, Hamasaki, Ryoji, Kojima, Masayuki

“…Reactive interactions in plasma etching have been investigated. Simple gas-phase transport of etchants and the reaction by-products in the wafer near-surface…”
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High-rate-gas-flow microwave plasma etching of silicon by Tsujimoto, K., Kumihashi, T., Kohuji, N., Tachi, S.

“…A high-rate-gas-flow plasma etching technique using a very low gas pressure and very high pumping rate is described. The principle of high-flow etching is…”
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