Search Results - "TURNER, Steven Eugene"

Phase Coherent Frequency Hopping in Direct Digital Synthesizers and Phase Locked Loops by Turner, Steven Eugene, Cali, Joseph D.

“…Phase coherent, frequency hopping direct digital synthesizer (DDS) and Type-II phase locked loop (PLL) circuits are presented in this paper. The proposed…”
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Microresonator photonic wire bond integration for Kerr-microcomb generation by Takabayashi, Alain Yuji, Pavlov, Nikolay, Rosborough, Victoria, Hoffman, Galen, Kanger, Lou, Koushyar, Farzad Mokhtari, Huffman, Taran, Nelson, Mike, Turner, Charles, Johansson, Leif, Musolf, Juergen, Garrett, Henry, Liu, Thomas, Morrison, Gordon, Chembo, Yanne, Mattis, Brian, Nguyen, Thien-An, Van Camp, Mackenzie, Turner, Steven Eugene, Karpov, Maxim, Jost, John, Burkley, Zakary

“…Extremely high- Q microresonators provide an attractive platform for a plethora of photonic applications including optical frequency combs, high-precision…”
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Front-End Programmable 40 GS/s Monobit ADC in 45 nm SOI Technology by Huang, Cameron, Bonner-Stewart, Jeffrey F., Turner, Steven Eugene, Wang, Renyuan

“…A 40 GS/s monobit analog-to-digital converter (ADC) with programmable RF input conditioning implemented in an RF 45 nm silicon-on-insulator (GF 45RFSOI)…”
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Direct Digital Synthesizer With Sine-Weighted DAC at 32-GHz Clock Frequency in InP DHBT Technology by Turner, S.E., Kotecki, D.E.

“…A direct digital synthesizer (DDS) implemented in InP double heterojunction bipolar transistor (DHBT) technology is reported. This DDS uses a sine-weighted…”
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Direct Digital Synthesizer with 14 GS/s Sampling Rate Heterogeneously Integrated in InP HBT and GaN HEMT on CMOS by Turner, Steven Eugene, Meredith, James M., Byrd, Justin M., Kushner, Lawrence J., Stuenkel, Mark E., Madison, Gary M., Cartwright, Justin A., Harwood, Richard L., Cali, Joseph D., Chadwick, Steve A., Oh, Michael, Matta, John T.

“…A 14 GS/s direct digital synthesizer (DDS) heterogeneously integrated with InP and GaN on CMOS is presented. The DDS includes over 6 million 45 nm CMOS FETs,…”
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ROM-Based Direct Digital Synthesizer at 24 GHz Clock Frequency in InP DHBT Technology by Turner, S.E., Chan, R.T., Feng, J.T.

“…A direct digital synthesizer (DDS) implemented in InP double heterojunction bipolar transistor technology is reported. The DDS has a 12 b phase accumulator and…”
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Direct digital synthesizer with ROM-Less architecture at 13-GHz clock frequency in InP DHBT technology by Turner, S.E., Kotecki, D.E.

“…A direct digital synthesizer (DDS) implemented in InP double heterojunction bipolar transistor (DHBT) technology is reported. The DDS has a ROM-less…”
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Single-Chip 30 GHz SiGe Sub-Sampling PLL with 28.3 fs Jitter by Dimitrov, Dimitre, Hickle, Mark D., Speir, Matthew, Krzyzek, Joseph M., Lacroix, Daniel P., Srinivas, Shail, Sepanek, Robert, Desrochers, Spencer, Turner, Steven Eugene

“…We demonstrate a phase locked loop (PLL) in a 45 nm PDSOI process with SiGe heterojunction bipolar devices (HBTs). The PLL has an output frequency centered…”
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36-GHz, 16 \times 6-Bit ROM in InP DHBT Technology Suitable for DDS Application by Manandhar, S., Turner, S.E., Kotecki, D.E.

“…A 16times6-bit read-only memory (ROM), employing an architecture suitable for use as a phase to amplitude converter for direct digital synthesizers (DDS), has…”
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36-GHz, 16×6-bit ROM in InP DHBT technology suitable for DDS application by MANANDHAR, Sanjeev, TURNER, Steven Eugene, KOTECKI, David E

“…A 16times6-bit read-only memory (ROM), employing an architecture suitable for use as a phase to amplitude converter for direct digital synthesizers (DDS), has…”
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A Single-Chip 25.3-28.0 GHz SiGe BiCMOS PLL with −134 dBc/Hz Phase Noise at 10 MHz Offset and −96 dBc Reference Spurs by Hickle, Mark D., Grout, Kevin, Grens, Curtis, Flewelling, Gregory, Turner, Steven Eugene

“…This paper presents a 25.3-28.0 GHz integer-N PLL in a 90 nm SiGe BiCMOS process. The PLL heavily utilizes SiGe HBTs for high-speed and low-noise operation,…”
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4-bit adder-accumulator at 41-GHz clock frequency in InP DHBT technology by Turner, S.E., Elder, R.B., Jansen, D.S., Kotecki, D.E.

“…A 41-GHz 4-b adder-accumulator test circuit implemented in InP double heterojunction bipolar transistor (DHBT) technology using 624 transistors is reported…”
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High-speed digital and mixed-signal components for X- and K(U)-band direct digital synthesizers in indium phosphide DHBT technology by Turner, Steven Eugene

“…Recently reported double heterojunction bipolar transistor (DHBT) devices manufactured in Indium Phosphide (InP) technology with ft and fmax both over 300 GHz…”
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High-speed digital and mixed-signal components for X- and K(U)-band direct digital synthesizers in indium phosphide DHBT technology by Turner, Steven Eugene

“…Recently reported double heterojunction bipolar transistor (DHBT) devices manufactured in Indium Phosphide (InP) technology with ft and fmax both over 300 GHz…”
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Benchmark results for high-speed 4-bit accumulators implemented in indium phosphide DHBT technology by Turner, S.E., Kotecki, D.E.

“…High-speed accumulators are frequently used as a benchmark of the high-speed performance and ability to yield large scale circuits in InP double heterojunction…”
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BENCHMARK RESULTS FOR HIGH-SPEED 4-BIT ACCUMULATORS IMPLEMENTED IN INDIUM PHOSPHIDE DHBT TECHNOLOGY by TURNER, STEVEN EUGENE, KOTECKI, DAVID E.

“…High-speed accumulators are frequently used as a benchmark of the high-speed performance and ability to yield large scale circuits in InP double…”
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