Search Results - "TSUO, Y. S"

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  1. 1

    Enhancement and stabilization of porous silicon photoluminescence by oxygen incorporation with a remote-plasma treatment by XIAO, Y, HEBEN, M. J, MCCULLOUGH, J. M, TSUO, Y. S, PANKOVE, J. I, DEB, S. K

    Published in Applied physics letters (08-03-1993)
    “…We report a treatment that enhances and stabilizes the photoluminescence (PL) from porous Si films. Films prepared by anodization in a 50% HF/ethanol solution…”
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    Journal Article
  2. 2

    Remote plasma hydrogenation of ion beam amorphized silicon by KAR, S, PANKOVE, J. I, TSUO, Y. S

    Published in Applied physics letters (05-08-1991)
    “…In this investigation, the efficacy of remote plasma hydrogenation, in the passivation of bonding and other electronic defects in amorphous silicon, has been…”
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    Journal Article
  3. 3

    Structural studies of hydrogen‐bombarded silicon using ellipsometry and transmission electron microscopy by Collins, R. W., Yacobi, B. G., Jones, K. M., Tsuo, Y. S.

    “…Hydrogen‐bombardment‐induced structural changes in single‐crystal silicon were studied using ellipsometry and transmission electron microscopy techniques…”
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    Journal Article
  4. 4
  5. 5

    Doping and hydrogenation by ion implantation of glow discharge deposited amorphous silicon films by GALLONI, R, TSUO, Y. S, BAKER, D. W, ZIGNANI, F

    Published in Applied physics letters (15-01-1990)
    “…We have studied the effects of ion implanting boron into glow discharge deposited hydrogenated amorphous silicon films (a-Si:H). Electrical activity more than…”
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    Journal Article
  6. 6

    Potential applications of porous silicon in photovoltaics by Tsuo, Y.S., Xiao, Y., Heben, M.J., Wu, X., Pern, F.J., Deb, S.K.

    “…Porous Si formed on crystalline Si wafers using electrochemical etching exhibits photoluminescent and electroluminescent properties. The authors report on the…”
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    Conference Proceeding Journal Article
  7. 7

    Ion beam hydrogenation of amorphous silicon by TSUO, Y. S, SMITH, E. B, DEB, S. K

    Published in Applied physics letters (02-11-1987)
    “…A Kaufman ion beam source was used to implant hydrogen atoms into glow-discharge-deposited amorphous silicon materials in which the hydrogen content had been…”
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    Journal Article
  8. 8

    Hydrogen passivation of silicon sheet solar cells by TSUO, Y. S, MILSTEIN, J. B

    Published in Applied physics letters (01-11-1984)
    “…Significant improvements in the efficiencies of dendritic web and edge-supported-pulling silicon sheet solar cells have been obtained after hydrogen ion beam…”
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    Journal Article
  9. 9

    Grain boundary and dislocation effects on the PV performance of high-purity silicon by Ciszek, T.F., Wang, T.H., Burrows, R.W., Wu, X., Alleman, J., Bekkedahl, T., Tsuo, Y.S.

    “…To quantify the effects of grain size and dislocation defects on the minority charge carrier lifetime /spl tau/ and photovoltaic (PV) efficiency of silicon,…”
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    Conference Proceeding Journal Article
  10. 10

    Solar cell structures combining amorphous, microcrystalline, and single-crystalline silicon by Tsuo, Y.S., Wu, X., Alleman, J.L., Li, X., Qu, Y., Ciszek, T.F., Hollingsworth, R.E., Bhat, P.K.

    “…Single- or multiple-junction solar cells combining hydrogenated amorphous silicon (a-Si:H) and/or microcrystalline silicon (/spl mu/c-Si) thin films with a…”
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    Conference Proceeding Journal Article
  11. 11

    Electron channeling and EBIC studies of edge-supported pulling silicon sheets by Tsuo, Y.S., Hurd, J.L., Matson, R.J., Ciszek, T.F.

    Published in IEEE transactions on electron devices (01-05-1984)
    “…The dominant grain structure in edge-supported pulling silicon sheets has been studied by electron channeling in a scanning electron microscope. For unseeded…”
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  12. 12

    High-flux solar furnace processing of silicon solar cells by Tsuo, Y.S., Pitts, J.R., Landry, M.D., Menna, P., Bingham, C.E., Lewandowski, A., Ciszek, T.F.

    “…We used a 10-kW, high-flux solar furnace (HFSF) to diffuse the front-surface n +-p junction and the back-surface p-p + junction of single-crystal silicon solar…”
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  13. 13
  14. 14

    Correlation of stress with light-induced defects in hydrogenated amorphous silicon films by KURTZ, S. R, TSUO, Y. S, TSU, R

    Published in Applied physics letters (13-10-1986)
    “…No correlation was found between the stress in hydrogenated amorphous silicon films and the light-induced effect, as measured by the photoconductivity. An…”
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    Journal Article
  15. 15

    Porous silicon gettering by Tsuo, Y.S., Menna, P., Pitts, J.R., Jantzen, K.R., Asher, S.E., Al-Jassim, M.M., Ciszek, T.F.

    “…We have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step…”
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    Conference Proceeding
  16. 16

    High-flux solar furnace processing of silicon solar cells by Tsuo, Y.S., Pitts, J.R., Landry, M.D., Bingham, C.E., Lewandowski, A., Ciszek, T.F.

    “…We used a 10-kW high-flux solar furnace (HFSF) to diffuse the front-surface n/sup +/-p junction and the back-surface p-p/sup +/ junction of single-crystal…”
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    Conference Proceeding
  17. 17

    Recent results on ion-beam hydrogenation of amorphous silicon by Tsuo, Y.S., Xu, Y., Mascarenhas, A., Deb, S.K., Barua, A.K.

    “…The ion-beam hydrogenation of undoped amorphous silicon for solar cells obtained by dehydrogenation of glow-discharge-deposited a-Si:H, by glow-discharge…”
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    Conference Proceeding
  18. 18

    PV electrification in India and China: the NREL's experience in international cooperation by Stone, J. L., Tsuo, Y. S., Ullal, H. S., Wallace, W. L., Sastry, E. V. R., Baoshan, Li

    Published in Progress in photovoltaics (01-09-1998)
    “…The US Department of Energy (DOE) through its National Renewable Energy Laboratory (NREL) has initiated rural development projects in India and China to…”
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    Journal Article
  19. 19

    Improvement of a-Si sub(1-x)C sub(x):H/a-Si:H p/i interface by hydrogen-plasma flushing studied by photoluminescence by Han, D-X, Pankove, J I, Tsuo, Y S, Qiu, C H, Xu, Y

    Published in Journal of materials research (01-01-1991)
    “…A hydrogen-plasma reactive flush of the glow discharge reactor after boron-doped a-Si sub(1-x)C sub(x):H film deposition has been used to reduce boron…”
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    Journal Article
  20. 20

    Improvement of a–Si1−xCx: H/a–Si: H p/i interface by hydrogen–plasma flushing studied by photoluminescence by Han, Daxing, Pankove, J.I., Tsuo, Y.S., Qiu, C.H., Xu, Y.

    Published in Journal of materials research (01-09-1991)
    “…A hydrogen–plasma reactive flush of the glow discharge reactor after boron–doped a–Si1−xCx : H film deposition has been used to reduce boron contamination of…”
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    Journal Article