Search Results - "TSUO, Y. S"
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Enhancement and stabilization of porous silicon photoluminescence by oxygen incorporation with a remote-plasma treatment
Published in Applied physics letters (08-03-1993)“…We report a treatment that enhances and stabilizes the photoluminescence (PL) from porous Si films. Films prepared by anodization in a 50% HF/ethanol solution…”
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2
Remote plasma hydrogenation of ion beam amorphized silicon
Published in Applied physics letters (05-08-1991)“…In this investigation, the efficacy of remote plasma hydrogenation, in the passivation of bonding and other electronic defects in amorphous silicon, has been…”
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3
Structural studies of hydrogen‐bombarded silicon using ellipsometry and transmission electron microscopy
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-03-1986)“…Hydrogen‐bombardment‐induced structural changes in single‐crystal silicon were studied using ellipsometry and transmission electron microscopy techniques…”
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4
Improved Efficiency and Stability of Silicon Photocathodes by Electrochemical Etching
Published in Journal of physical chemistry (1952) (01-03-1995)Get full text
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5
Doping and hydrogenation by ion implantation of glow discharge deposited amorphous silicon films
Published in Applied physics letters (15-01-1990)“…We have studied the effects of ion implanting boron into glow discharge deposited hydrogenated amorphous silicon films (a-Si:H). Electrical activity more than…”
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Potential applications of porous silicon in photovoltaics
Published in Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9) (1993)“…Porous Si formed on crystalline Si wafers using electrochemical etching exhibits photoluminescent and electroluminescent properties. The authors report on the…”
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7
Ion beam hydrogenation of amorphous silicon
Published in Applied physics letters (02-11-1987)“…A Kaufman ion beam source was used to implant hydrogen atoms into glow-discharge-deposited amorphous silicon materials in which the hydrogen content had been…”
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8
Hydrogen passivation of silicon sheet solar cells
Published in Applied physics letters (01-11-1984)“…Significant improvements in the efficiencies of dendritic web and edge-supported-pulling silicon sheet solar cells have been obtained after hydrogen ion beam…”
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9
Grain boundary and dislocation effects on the PV performance of high-purity silicon
Published in Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9) (1993)“…To quantify the effects of grain size and dislocation defects on the minority charge carrier lifetime /spl tau/ and photovoltaic (PV) efficiency of silicon,…”
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10
Solar cell structures combining amorphous, microcrystalline, and single-crystalline silicon
Published in Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9) (1993)“…Single- or multiple-junction solar cells combining hydrogenated amorphous silicon (a-Si:H) and/or microcrystalline silicon (/spl mu/c-Si) thin films with a…”
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Conference Proceeding Journal Article -
11
Electron channeling and EBIC studies of edge-supported pulling silicon sheets
Published in IEEE transactions on electron devices (01-05-1984)“…The dominant grain structure in edge-supported pulling silicon sheets has been studied by electron channeling in a scanning electron microscope. For unseeded…”
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12
High-flux solar furnace processing of silicon solar cells
Published in Solar energy materials and solar cells (1996)“…We used a 10-kW, high-flux solar furnace (HFSF) to diffuse the front-surface n +-p junction and the back-surface p-p + junction of single-crystal silicon solar…”
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13
Improvement of a-Si1-xCx:H/a-Si:Hp/i interface by hydrogen-plasma flushing studied by photoluminescence
Published in Journal of materials research (01-09-1991)Get full text
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14
Correlation of stress with light-induced defects in hydrogenated amorphous silicon films
Published in Applied physics letters (13-10-1986)“…No correlation was found between the stress in hydrogenated amorphous silicon films and the light-induced effect, as measured by the photoconductivity. An…”
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15
Porous silicon gettering
Published in Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 (1996)“…We have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step…”
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Conference Proceeding -
16
High-flux solar furnace processing of silicon solar cells
Published in Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) (1994)“…We used a 10-kW high-flux solar furnace (HFSF) to diffuse the front-surface n/sup +/-p junction and the back-surface p-p/sup +/ junction of single-crystal…”
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Conference Proceeding -
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Recent results on ion-beam hydrogenation of amorphous silicon
Published in Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference (1988)“…The ion-beam hydrogenation of undoped amorphous silicon for solar cells obtained by dehydrogenation of glow-discharge-deposited a-Si:H, by glow-discharge…”
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Conference Proceeding -
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PV electrification in India and China: the NREL's experience in international cooperation
Published in Progress in photovoltaics (01-09-1998)“…The US Department of Energy (DOE) through its National Renewable Energy Laboratory (NREL) has initiated rural development projects in India and China to…”
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Improvement of a-Si sub(1-x)C sub(x):H/a-Si:H p/i interface by hydrogen-plasma flushing studied by photoluminescence
Published in Journal of materials research (01-01-1991)“…A hydrogen-plasma reactive flush of the glow discharge reactor after boron-doped a-Si sub(1-x)C sub(x):H film deposition has been used to reduce boron…”
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Improvement of a–Si1−xCx: H/a–Si: H p/i interface by hydrogen–plasma flushing studied by photoluminescence
Published in Journal of materials research (01-09-1991)“…A hydrogen–plasma reactive flush of the glow discharge reactor after boron–doped a–Si1−xCx : H film deposition has been used to reduce boron contamination of…”
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