Search Results - "TSUNODA, KOJI"

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  1. 1

    Improvement in surface morphology of GaSb buffer layer by two-step high and low temperature growth by Okumura, Shigekazu, Tomabechi, Shuichi, Suzuki, Ryo, Matsukura, Yusuke, Tsunoda, Koji, Kon, Jun-ichi, Nishino, Hironori

    Published in Journal of crystal growth (01-11-2017)
    “…•Surface morphology of GaSb was investigated by changing growth conditions.•At high temperature growth, flat surfaces was obtained, while the pits existed.•At…”
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    Journal Article
  2. 2

    Field-programmable rectification in rutile TiO2 crystals by Jameson, John R., Fukuzumi, Yoshiaki, Wang, Zheng, Griffin, Peter, Tsunoda, Koji, Meijer, G. Ingmar, Nishi, Yoshio

    Published in Applied physics letters (10-09-2007)
    “…The authors report “field-programmable rectification” in crystals of rutile TiO2. A “programming” voltage is applied between two Pt electrodes on the surface…”
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    Journal Article
  3. 3

    Effects of As2 pressure on InAs heteroepitaxial growth on vicinal GaSb(001) substrate by molecular beam epitaxy by Okumura, Shigekazu, Tomabechi, Shuichi, Suzuki, Ryo, Tsunoda, Koji, Kon, Jun-ichi, Nishino, Hironori

    Published in Japanese Journal of Applied Physics (01-10-2018)
    “…The effects of As2 pressure on the InAs heteroepitaxial growth on a vicinal GaSb(001) substrate by solid-source molecular beam epitaxy were investigated…”
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    Journal Article
  4. 4

    A study of dielectric breakdown mechanism in CoFeB/MgO/CoFeB magnetic tunnel junction by Yoshida, C., Kurasawa, M., Young Min Lee, Tsunoda, K., Aoki, M., Sugiyama, Y.

    “…We examined the breakdown characteristics of a 1-nm-thick MgO barrier by measuring the time dependent dielectric breakdown (TDDB) and conducting atomic force…”
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    Conference Proceeding
  5. 5

    Sub- \hbox\mu\hbox Reset Current of Nickel Oxide Resistive Memory Through Control of Filamentary Conductance by Current Limit of MOSFET by Sato, Yoshihiro, Tsunoda, Koji, Kinoshita, Kentaro, Noshiro, Hideyuki, Aoki, Masaki, Sugiyama, Yoshihiro

    Published in IEEE transactions on electron devices (01-05-2008)
    “…Resistive random access memory consisting of NiO resistive memories and control transistors was fabricated with 0.18-mum CMOS technology. An initial forming…”
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    Journal Article
  6. 6

    Suppression of three-dimensional pit formation of InAs on GaSb(0 0 1) by Sb-free two-step molecular beam epitaxy by Okumura, Shigekazu, Suzuki, Ryo, Tsunoda, Koji, Nishino, Hironori, Sugiyama, Masakazu

    Published in Journal of crystal growth (15-12-2019)
    “…•InAs on GaSb heteroepitaxial growth by molecular beam epitaxy was investigated.•Pits are easily formed on InAs surface at low growth temperatures.•Pits are…”
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    Journal Article
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  9. 9

    Effects of As^sub 2^ pressure on InAs heteroepitaxial growth on vicinal GaSb(001) substrate by molecular beam epitaxy by Okumura, Shigekazu, Tomabechi, Shuichi, Suzuki, Ryo, Tsunoda, Koji, Kon, Jun-ichi, Nishino, Hironori

    Published in Japanese Journal of Applied Physics (01-11-2018)
    “…The effects of As2 pressure on the InAs heteroepitaxial growth on a vicinal GaSb(001) substrate by solid-source molecular beam epitaxy were investigated…”
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    Journal Article
  10. 10

    Enhanced Thermal Stability in Perpendicular Top-Pinned Magnetic Tunnel Junction With Synthetic Antiferromagnetic Free Layers by Yoshida, Chikako, Aoki, Masaki, Sugii, Toshihiro, Takenaga, Takashi, Iba, Yoshihisa, Yamazaki, Yuichi, Noshiro, Hideki, Tsunoda, Koji, Hatada, Akiyoshi, Nakabayashi, Masaaki, Takahashi, Atsushi

    Published in IEEE transactions on magnetics (01-07-2013)
    “…Synthetic antiferromagnetic (SAF) free layers consisting of [Co (0.3 nm)/Pd (0.7 nm)] n /Ru/Ta/CoFeB were investigated for use in the free layers of top-pinned…”
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    Journal Article Conference Proceeding
  11. 11

    Reduction of Offset Field in Top-Pinned MTJ With Synthetic Antiferromagnetic Free Layer by Yoshida, Chikako, Takenaga, Takashi, Yamazaki, Yuichi, Uehara, Haruka, Noshiro, Hideyuki, Tsunoda, Koji, Iba, Yoshihisa, Hatada, Akiyoshi, Nakabayashi, Masaaki, Takahashi, Atsushi, Aoki, Masaki, Sugii, Toshihiro

    Published in IEEE transactions on magnetics (01-11-2014)
    “…We found that the offset field (H off ) of a top-pinned magnetic tunnel junction (MTJ) with a CoPd/Ru/Ta/CoFeB-synthetic antiferromagnetic (SAF) free layer can…”
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    Journal Article
  12. 12
  13. 13

    Field-programmable rectification in rutile Ti O 2 crystals by Jameson, John R., Fukuzumi, Yoshiaki, Wang, Zheng, Griffin, Peter, Tsunoda, Koji, Meijer, G. Ingmar, Nishi, Yoshio

    Published in Applied physics letters (10-09-2007)
    “…The authors report "field-programmable rectification" in crystals of rutile Ti O 2 . A "programming" voltage is applied between two Pt electrodes on the…”
    Get full text
    Journal Article
  14. 14

    Highly scalable STT-MRAM with MTJs of top-pinned structure in 1T/1MTJ cell by Young Min Lee, Yoshida, C, Tsunoda, K, Umehara, S, Aoki, M, Sugii, T

    Published in 2010 Symposium on VLSI Technology (01-06-2010)
    “…We report on spin transfer torque magnetoresistance random access memory (STT-MRAM) with magnetic tunnel junctions (MTJs) that have a top-pinned stacking…”
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    Conference Proceeding
  15. 15

    Suppression of Three-Dimensional Pit Formation of InAs on GaSb(001) by Two-Step MBE by Okumura, Shigekazu, Suzuki, Ryo, Tsunoda, Koji, Nishino, Hironori, Sugiyama, Masakazu

    Published in 2019 Compound Semiconductor Week (CSW) (01-05-2019)
    “…InAs heteroepitaxial growth on GaSb by molecular beam epitaxy was investigated. Pits tend to easily form on InAs surface at low temperature growth; however,…”
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    Conference Proceeding
  16. 16

    Negative-resistance read and write schemes for STT-MRAM in 0.13µm CMOS by Halupka, D., Huda, S., Song, W., Sheikholeslami, A., Tsunoda, K., Yoshida, C., Aoki, M.

    “…We present a negative-resistance read scheme and write scheme for spin-torque-transfer (STT) MRAM. A negative resistance shunting an STT-MRAM cell performs a…”
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    Conference Proceeding
  17. 17

    A negative-resistance sense amplifier for low-voltage operating STT-MRAM by Umeki, Yohei, Yanagida, Koji, Yoshimoto, Shusuke, Izumi, Shintaro, Yoshimoto, Masahiko, Kawaguchi, Hiroshi, Tsunoda, Koji, Sugii, Toshihiro

    “…This paper exhibits a 65-NM 8-Mb spin transfer torque magnetoresistance random access memory (STT-MRAM) operating at 0.38V. The proposed sense amplifier…”
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    Conference Proceeding
  18. 18

    EFFECTS OF PROSTAGLANDIN E1 ON CORONARY AND SYSTEMIC HEMODYNAMICS IN ANESTHETIZED DOGS by TSUNODA, KOJI, WATABE, MASATOSHI, ARISAKA, MINORU, SETA, KATSUYUKI

    “…The effects of prostaglandin E1 on coronary and systemic circulations were studied in anesthetized open chest dogs. The prostagiandin E1 showed a potent…”
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    Journal Article
  19. 19

    A 0.38-V operating STT-MRAM with process variation tolerant sense amplifier by Umeki, Yohei, Yanagida, Koji, Yoshimoto, Shusuke, Izumi, Shintaro, Yoshimoto, Masahiko, Kawaguchi, Hiroshi, Tsunoda, Koji, Sugii, Toshihiro

    “…This paper exhibits a 65-nm 8-Mb spin transfer torque magnetoresistance random access memory (STT-MRAM) operating at a single supply voltage with a…”
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    Conference Proceeding
  20. 20

    CARDIAC LESIONS IN PROGRESSIVE SYSTEMIC SCLEROSIS: A CLINICAL STUDY by MURATA, KAZUHIKO, TOMINAGA, KEIGO, TSUNODA, KOJI, BABA, NOBORU, HOJO, YOSHIMICHI, SHINKAI, TETSU, HASHIMOTO, TOYOZO, SUGA, HIDEAKI, YAMANE, OSAMU, HASEGAWA, AKIRA

    Published in The KITAKANTO Medical Journal (30-03-1977)
    “…Clinical evidence of cardiac involvement was present in 11 of 28 cases of progressive systemic slcerosis (PSS) between the age of 19 and 78 years. Abnormal…”
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    Journal Article