Search Results - "TSUNODA, KOJI"
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Improvement in surface morphology of GaSb buffer layer by two-step high and low temperature growth
Published in Journal of crystal growth (01-11-2017)“…•Surface morphology of GaSb was investigated by changing growth conditions.•At high temperature growth, flat surfaces was obtained, while the pits existed.•At…”
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Field-programmable rectification in rutile TiO2 crystals
Published in Applied physics letters (10-09-2007)“…The authors report “field-programmable rectification” in crystals of rutile TiO2. A “programming” voltage is applied between two Pt electrodes on the surface…”
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Effects of As2 pressure on InAs heteroepitaxial growth on vicinal GaSb(001) substrate by molecular beam epitaxy
Published in Japanese Journal of Applied Physics (01-10-2018)“…The effects of As2 pressure on the InAs heteroepitaxial growth on a vicinal GaSb(001) substrate by solid-source molecular beam epitaxy were investigated…”
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A study of dielectric breakdown mechanism in CoFeB/MgO/CoFeB magnetic tunnel junction
Published in 2009 IEEE International Reliability Physics Symposium (01-04-2009)“…We examined the breakdown characteristics of a 1-nm-thick MgO barrier by measuring the time dependent dielectric breakdown (TDDB) and conducting atomic force…”
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Conference Proceeding -
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Sub- \hbox\mu\hbox Reset Current of Nickel Oxide Resistive Memory Through Control of Filamentary Conductance by Current Limit of MOSFET
Published in IEEE transactions on electron devices (01-05-2008)“…Resistive random access memory consisting of NiO resistive memories and control transistors was fabricated with 0.18-mum CMOS technology. An initial forming…”
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Suppression of three-dimensional pit formation of InAs on GaSb(0 0 1) by Sb-free two-step molecular beam epitaxy
Published in Journal of crystal growth (15-12-2019)“…•InAs on GaSb heteroepitaxial growth by molecular beam epitaxy was investigated.•Pits are easily formed on InAs surface at low growth temperatures.•Pits are…”
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Effects of As 2 pressure on InAs heteroepitaxial growth on vicinal GaSb(001) substrate by molecular beam epitaxy
Published in Japanese Journal of Applied Physics (01-11-2018)Get full text
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Effects of As^sub 2^ pressure on InAs heteroepitaxial growth on vicinal GaSb(001) substrate by molecular beam epitaxy
Published in Japanese Journal of Applied Physics (01-11-2018)“…The effects of As2 pressure on the InAs heteroepitaxial growth on a vicinal GaSb(001) substrate by solid-source molecular beam epitaxy were investigated…”
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Journal Article -
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Enhanced Thermal Stability in Perpendicular Top-Pinned Magnetic Tunnel Junction With Synthetic Antiferromagnetic Free Layers
Published in IEEE transactions on magnetics (01-07-2013)“…Synthetic antiferromagnetic (SAF) free layers consisting of [Co (0.3 nm)/Pd (0.7 nm)] n /Ru/Ta/CoFeB were investigated for use in the free layers of top-pinned…”
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Journal Article Conference Proceeding -
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Reduction of Offset Field in Top-Pinned MTJ With Synthetic Antiferromagnetic Free Layer
Published in IEEE transactions on magnetics (01-11-2014)“…We found that the offset field (H off ) of a top-pinned magnetic tunnel junction (MTJ) with a CoPd/Ru/Ta/CoFeB-synthetic antiferromagnetic (SAF) free layer can…”
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Novel Circuitry Configuration with Paired-Cell Erase Operation for High-Density 90-nm Embedded Resistive Random Access Memory
Published in Japanese Journal of Applied Physics (01-04-2009)Get full text
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13
Field-programmable rectification in rutile Ti O 2 crystals
Published in Applied physics letters (10-09-2007)“…The authors report "field-programmable rectification" in crystals of rutile Ti O 2 . A "programming" voltage is applied between two Pt electrodes on the…”
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14
Highly scalable STT-MRAM with MTJs of top-pinned structure in 1T/1MTJ cell
Published in 2010 Symposium on VLSI Technology (01-06-2010)“…We report on spin transfer torque magnetoresistance random access memory (STT-MRAM) with magnetic tunnel junctions (MTJs) that have a top-pinned stacking…”
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Conference Proceeding -
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Suppression of Three-Dimensional Pit Formation of InAs on GaSb(001) by Two-Step MBE
Published in 2019 Compound Semiconductor Week (CSW) (01-05-2019)“…InAs heteroepitaxial growth on GaSb by molecular beam epitaxy was investigated. Pits tend to easily form on InAs surface at low temperature growth; however,…”
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Conference Proceeding -
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Negative-resistance read and write schemes for STT-MRAM in 0.13µm CMOS
Published in 2010 IEEE International Solid-State Circuits Conference - (ISSCC) (01-02-2010)“…We present a negative-resistance read scheme and write scheme for spin-torque-transfer (STT) MRAM. A negative resistance shunting an STT-MRAM cell performs a…”
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Conference Proceeding -
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A negative-resistance sense amplifier for low-voltage operating STT-MRAM
Published in The 20th Asia and South Pacific Design Automation Conference (01-01-2015)“…This paper exhibits a 65-NM 8-Mb spin transfer torque magnetoresistance random access memory (STT-MRAM) operating at 0.38V. The proposed sense amplifier…”
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Conference Proceeding -
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EFFECTS OF PROSTAGLANDIN E1 ON CORONARY AND SYSTEMIC HEMODYNAMICS IN ANESTHETIZED DOGS
Published in Kita Kantō igaku (The Kitakanto Medical Journal) (1974)“…The effects of prostaglandin E1 on coronary and systemic circulations were studied in anesthetized open chest dogs. The prostagiandin E1 showed a potent…”
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A 0.38-V operating STT-MRAM with process variation tolerant sense amplifier
Published in 2013 IEEE Asian Solid-State Circuits Conference (A-SSCC) (01-11-2013)“…This paper exhibits a 65-nm 8-Mb spin transfer torque magnetoresistance random access memory (STT-MRAM) operating at a single supply voltage with a…”
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Conference Proceeding -
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CARDIAC LESIONS IN PROGRESSIVE SYSTEMIC SCLEROSIS: A CLINICAL STUDY
Published in The KITAKANTO Medical Journal (30-03-1977)“…Clinical evidence of cardiac involvement was present in 11 of 28 cases of progressive systemic slcerosis (PSS) between the age of 19 and 78 years. Abnormal…”
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