Search Results - "TSENG, W. F"

Integration of CNS survival and differentiation by HIF2α by Ko, C-Y, Tsai, M-Y, Tseng, W-F, Cheng, C-H, Huang, C-R, Wu, J-S, Chung, H-Y, Hsieh, C-S, Sun, C-K, Hwang, S-P L, Yuh, C-H, Huang, C-J, Pai, T-W, Tzou, W-S, Hu, C-H

“…Hypoxia-inducible factor (HIF) 1 α and HIF2 α and the inhibitor of apoptosis survivin represent prominent markers of many human cancers. They are also widely…”
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Current Practices in Hyaluronic Acid Dermal Filler Treatment in Asia Pacific and Practical Approaches to Achieving Safe and Natural-Looking Results by Corduff, Niamh, Juniarti, Lanny, Lim, Ting Song, Lin, Frank, Mariwalla, Kavita, Pavicic, Tatjana, Quiambao, Arnelle, Siew, Tuck Wah, Suwanchinda, Atchima, Tseng, Fang Wen, Vachiramon, Vasanop, Youn, Choon Shik, Ho, Wilson WS

“…Complications such as delayed inflammatory reactions (DIRs) and unnatural outcomes can sometimes arise from hyaluronic acid (HA) dermal filler treatments and…”
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Thermal and chemical stability of Schottky metallization on GaAs by LAU, S. S, CHEN, W. X, MARSHALL, E. D, PAI, C. S, TSENG, W. F, KUECH, T. F

“…The high-temperature stability of Schottky barriers on GaAs has been correlated with the thermodynamic driving force for chemical reaction between the metallic…”
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An interdigitated stacked p-i-n multiple-quantum-well modulator by Huang, X.R., Cheung, S.K., Cartwright, A.N., Smirl, A.L., Tseng, W.F.

“…We demonstrate low-voltage operation of a strained InGaAs-GaAs interdigitated hetero n-i-p-i modulator (or stacked SEED) that is grown and fabricated using a…”
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Interdigitated hetero InGaAs/GaAs n-i-p-i modulators by Tseng, W.F., Chandler-Horowitz, D., Papanicolaou, N.A., Boos, J.B.

“…Interdigitated hetero InGaAs n-i-p-i InGaAs/GaAs modulators have been grown and fabricated by a shadow mask technique for selectively making contacts to n- and…”
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Coherent plasma oscillations in bulk semiconductors by Sha, W, Smirl, AL, Tseng, WF

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Scaling of the nonlinear optical cross sections of GaAs-AlGaAs multiple quantum-well hetero n-i-p-i's by McCallum, D.S., Cartwright, A.N., Smirl, A.L., Tseng, W.F., Pellegrino, J.G., Comas, J.

“…We study the dependence of the Stark shift optical nonlinearity of GaAs-AlGaAs multiple quantum-well hetero n-i-p-i's on the number of quantum wells per…”
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Formation of epitaxial Si1-xGex films produced by wet oxidation of amorphous SiGe layers deposited on Si(100) by PROKES, S. M, TSENG, W. F, CHRISTOU, A

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Solid-state epitaxial growth of deposited Si films by von Allmen, M., Lau, S. S., Mayer, J. W., Tseng, W. F.

“…Epitaxial growth by furnace annealing of amorphous Si layers deposited onto 〈100〉 Si substrates is demonstrated. Substrate cleaning prior to the evaporation…”
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Theory of a Heat Sensing Velocimeter by Tseng, W. F., Lin, S. P.

“…The Navier-Stokes equation and the energy equation, with the Bousinessq approximation, are solved for the initial value problem of heat transfer from a…”
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Grain size dependence in a self-implanted silicon layer on laser irradiation energy density by Tseng, W. F., Mayer, J. W., Campisano, S. U., Foti, G., Rimini, E.

“…The transformation of amorphous Si layers to polycrystalline material induced by Q-switched ruby laser single pulses of 20 and 50 nsec duration has been…”
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Transient Radiation Effects in AlGaAs/GaAs MODFETs by Anderson, W. T., Simons, M., Tseng, W. F., Herb, J. A., Bandy, S.

“…Transient radiation effects were measured in AlGaAs/GaAs MODFETs. The temperature dependence of the long-term transients was measured using 3 ns flash X-ray…”
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Epitaxial growth of Si deposited on (100) Si by Hung, L. S., Lau, S. S., von Allmen, M., Mayer, J. W., Ullrich, B. M., Baker, J. E., Williams, P., Tseng, W. F.

“…Epitaxial growth of deposited amorphous Si on chemically cleaned (100) Si has been found and layer-by-layer growth occurred at rates comparable to those in…”
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Characterization of tantalum-silicon films on GaAs at elevated temperatures by Tseng, W.F., Zhang, B., Scott, D., Lau, S.S., Christou, A., Wilkins, B.R.

“…RF sputter-deposited tantalum-silicon films on GaAs have been investigated using four-point probe, glancing-angle X-ray diffraction, Auger electron…”
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Epitaxial growth of deposited amorphous layer by laser annealing by Lau, S. S., Tseng, W. F., Nicolet, M-A., Mayer, J. W., Eckardt, R. C., Wagner, R. J.

“…We demonstrate that a single short pulse of laser irradiation of appropriate energy is capable of recrystallizing in open air an amorphous Si layer deposited…”
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Simultaneous gettering of Au in silicon by phosphorus and dislocations by Tseng, W. F., Koji, T., Mayer, J. W., Seidel, T. E.

“…Gettering in Si may be achieved by either phosphorus diffusion (ion pairing) or by dislocations (strain). We show here by use of backscattering spectrometry…”
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Subthreshold characteristics of laterally gated AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors fabricated with focused ion beam implantation by Tseng, Wen F, Monk, David H

“…We have used a focused ion beam (FIB) technique to fabricate laterally gated AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors (pHEMTs), and have…”
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Effects of various implant species and post-anneal treatments on Si N-channel MOSFETs by TSENG, W. F, HEVEY, R. H, CORAZZI, R. J, CHRISTOU, A, DAVIS, G. E

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Solar furnace annealing of amorphous Si layers by Lau, S. S., von Allmen, M., Golecki, I., Nicolet, M-A., Kennedy, E. F., Tseng, W. F.

“…We demonstrate that a simple Al solar reflector can be used to induce solid-phase epitaxy of amorphous Si layers obtained either by ion-implantation or…”
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Heteroepitaxy of deposited amorphous layer by pulsed electron-beam irradiation by Lau, S. S., Tseng, W. F., Nicolet, M-A., Mayer, J. W., Minnucci, J. A., Kirkpatrick, A. R.

“…We demonstrate that a single short pulse of electron irradiation of appropriate energy is capable of recrystallizing epitaxially an amorphous Ge layer…”
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