Search Results - "TSCHERPTNER, N"

Recent advances in avalanche photodiodes by Campbell, J.C., Demiguel, S., Feng Ma, Beck, A., Xiangyi Guo, Shuling Wang, Xiaoguang Zheng, Xiaowei Li, Beck, J.D., Kinch, M.A., Huntington, A., Coldren, L.A., Decobert, J., Tscherptner, N.

“…The development of high-performance optical receivers has been a primary driving force for research on III-V compound avalanche photodiodes (APDs). The…”
Get full text

Correction to "Recent Advances in Avalanche Photodiodes" by Campbell, J.C., Demiguel, S., Ma, F., Beck, A., Guo, X., Wang, S., Zheng, X., Li, X., Beck, J.D., Kinch, M.A., Huntington, A., Coldren, L.A., Decobert, J., Tscherptner, N.

Get full text

High temperature (Ga)InAsP/high band gap GaInAsP barriers 1.3 μm SL-MQW lasers grown by gas source MBE by Pagnod-Rossiaux, Ph, Gaborit, F., Tscherptner, N., Roux, L., Starck, C., Fernier, B.

“…We report on an experimental investigation of the temperature sensitivity of (Ga)InAsP compressively strained multi-quantum well (MQW) 1.3 μm broad area lasers…”
Get full text

Low threshold current BH lasers fabricated by UHV chemical beam etching and GSMBE regrowth by Gentner, J., Jarry, P., Tscherptner, N., Goldstein, L.

“…A new chlorine-based chemical beam etching technique (CBET) compatible with MBE or CBE technology has been introduced recently. The process sequence combining…”
Get full text

High-efficiency 1.3 /spl mu/m Fabry-Perot laser diode based on hydrogenated passive spot-size converter by Tregoat, D., Barthe, F., Berthier, P., Bordes, M., Colson, V., Gentner, J.L., Hubert, S., Leclerc, D., Le Gouezigou, L., Lestra, A., Rao, E.V.K., Tscherptner, N., Fernier, B.

“…We present recent developments on the fabrication process of Buried Ridge Stripe (BRS) Laser Diodes (LDs) integrated with a butt-coupled passive Spot Size…”
Get full text

High temperature (Ga)InAsP/high band gap GaInAsP barriers 1.3 μm SL-MQW lasers grown by gas source MBE by PAGNOD-ROSSIAUX, P, GABORIT, F, TSCHERPTNER, N, ROUX, L, STARCK, C, FERNIER, B

Get full text

Evanescently-coupled avalanche photodiodes integrating a short multimode waveguide for high-responsivity and high- speed applications by Demiguel, S., Xiaoguang Zheng, Ning LI, Xiaowei Li, Campbell, J.C., Decobert, J., Tscherptner, N., Anselm, A.

“…We demonstrate evanescently-coupled avalanche photodiodes utilizing a planar short multimode waveguide. These devices exhibit high-responsivity (> 0.62 A/W at…”
Get full text

Selection-free WDM DFB lasers for high power applications by Mallfcot, F., Thddrez, B., Legat, D., Gaborit, D., Garreau, A., Leclerc, D., Lelarge, F., Tscherptner, N., Colson, V., Martineau, M.F., Riou, B.

“…A selection-free DFB structure is proposed for the fabrication of high power CW single mode lasers. The spectral uniformity is experimentally demonstrated on…”
Get full text

New, process tolerant, high performance 1.55 /spl mu/m polarization insensitive semiconductor optical amplifier based on low tensile bulk GaInAsP by Emery, J.-Y., Doussiere, P., Goldstein, L., Pommereau, F., Fortin, C., Ngo, R., Tscherptner, N., Lafragette, J.-L., Aubert, P., Brillouet, F., Laube, G., Barrau, J.

“…We demonstrate a polarization independent semiconductor optical amplifier using low tensile bulk separate confinement heterostructure. Internal gain as high as…”
Get full text