Search Results - "TRAMPERT, A"

GaSbBi/GaSb quantum well laser diodes by Delorme, O., Cerutti, L., Luna, E., Narcy, G., Trampert, A., Tournié, E., Rodriguez, J.-B.

“…We report on the structural and optical properties of GaSbBi single layers and GaSbBi/GaSb quantum well heterostructures grown by molecular beam epitaxy on…”
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Interfacial resistance switching characteristics in metal-chalcogenide junctions using Bi–Cu–Se, Bi–Ag–Se, and Sb–Cu–Te alloys by Takagaki, Y., Jenichen, B., Ramsteiner, M., Trampert, A.

“…Conduction properties of the junctions of chalcogenide alloys Bi–Cu–Se, Bi–Ag–Se, and Sb–Cu–Te with metals are investigated to examine the capability for…”
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Morphological and chemical instabilities of nitrogen delta-doped GaAs/(Al, Ga)As quantum wells by Luna, E., Gargallo-Caballero, R., Ishikawa, F., Trampert, A.

“…The microstructure and the element distribution across tensile-strained nitrogen δ-doped GaAs/(Al,Ga)As quantum wells (QW) are investigated by transmission…”
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Growth of Fe3Si/Ge/Fe3Si trilayers on GaAs(001) using solid-phase epitaxy by Gaucher, S., Jenichen, B., Kalt, J., Jahn, U., Trampert, A., Herfort, J.

“…Ferromagnetic Heusler alloys can be used in combination with semiconductors to create spintronic devices. The materials have cubic crystal structures, making…”
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Physical origin of the incubation time of self-induced GaN nanowires by Consonni, V., Trampert, A., Geelhaar, L., Riechert, H.

“…The nucleation process of self-induced GaN nanowires grown by molecular beam epitaxy has been investigated by reflection high-energy electron diffraction…”
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Clustering in a precipitate-free GeMn magnetic semiconductor by Bougeard, D, Ahlers, S, Trampert, A, Sircar, N, Abstreiter, G

“…We present the first study relating structural parameters of precipitate-free Ge0.95Mn0.05 films to magnetization data. Nanometer-sized clusters--areas with…”
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Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes by Waltereit, P, Brandt, O, Trampert, A, Grahn, H. T, Menniger, J, Ramsteiner, M, Reiche, M, Ploog, K. H

“…Compact solid-state lamps based on light-emitting diodes (LEDs) are of current technological interest as an alternative to conventional light bulbs. The…”
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X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films by KAGANER, V. M, BRANDT, O, TRAMPERT, A, PLOOG, K. H

“…We analyze the line shape of x-ray diffraction profiles of GaN epitaxial layers with large densities of randomly distributed threading dislocations. The peaks…”
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Reduction of the Threading Dislocation Density in GaSb Layers Grown on Si(001) by Molecular Beam Epitaxy by Gilbert, A., Graser, K., Ramonda, M., Trampert, A., Rodriguez, J.‐B., Tournié, E.

“…Abstract The monolithic integration of III‐V semiconductors on Si emerges as a promising approach for realizing photonic integrated circuits. However, the…”
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Epitaxial Fe3Si/Ge/Fe3Si thin film multilayers grown on GaAs(001) by Jenichen, B., Herfort, J., Jahn, U., Trampert, A., Riechert, H.

“…We demonstrate Fe3Si/Ge/Fe3Si/GaAs(001) structures grown by molecular-beam epitaxy and characterized by transmission electron microscopy, electron…”
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In situ investigation of self-induced GaN nanowire nucleation on Si by Chèze, C., Geelhaar, L., Trampert, A., Riechert, H.

“…The nucleation of GaN nanowires grown by molecular beam epitaxy on bare Si(111) and Si(001) has been investigated in situ by reflection high-energy electron…”
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Nanoscale Imaging of InN Segregation and Polymorphism in Single Vertically Aligned InGaN/GaN Multi Quantum Well Nanorods by Tip-Enhanced Raman Scattering by Poliani, E, Wagner, M. R, Reparaz, J. S, Mandl, M, Strassburg, M, Kong, X, Trampert, A, Sotomayor Torres, C. M, Hoffmann, A, Maultzsch, J

“…Vertically aligned GaN nanorod arrays with nonpolar InGaN/GaN multi quantum wells (MQW) were grown by MOVPE on c-plane GaN-on-sapphire templates. The chemical…”
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Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns by Albert, S., Bengoechea-Encabo, A., Kong, X., Sanchez-Garcia, M. A., Calleja, E., Trampert, A.

“…This work reports on the selective area growth by plasma-assisted molecular beam epitaxy and characterization of InGaN/GaN nanocolumnar heterostructures. The…”
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Ordered arrays of defect-free GaN nanocolumns with very narrow excitonic emission line width by Fernando-Saavedra, A., Albert, S., Bengoechea-Encabo, A., Lopez-Romero, D., Niehle, M., Metzner, S., Schmidt, G., Bertram, F., Sánchez-García, M.A., Trampert, A., Christen, J., Calleja, E.

“…•Ordered arrays of very high quality, defect-free GaN nanocolumns.•Two step process: etching and overgrowth by Molecular Beam Epitaxy.•Effective filtering of…”
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Growth, morphology, and structural properties of group-III-nitride nanocolumns and nanodisks by Calleja, E., Ristić, J., Fernández-Garrido, S., Cerutti, L., Sánchez-García, M. A., Grandal, J., Trampert, A., Jahn, U., Sánchez, G., Griol, A., Sánchez, B.

“…The growth conditions to achieve group‐III‐nitride nanocolumns and nanocolumnar heterostructures by plasma‐assisted molecular beam epitaxy are studied. The…”
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Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks by Bengoechea-Encabo, A., Barbagini, F., Fernandez-Garrido, S., Grandal, J., Ristic, J., Sanchez-Garcia, M.A., Calleja, E., Jahn, U., Luna, E., Trampert, A.

“…The influence of the substrate temperature, III/V flux ratio, and mask geometry on the selective area growth of GaN nanocolumns is investigated. For a given…”
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Nucleation and coalescence effects on the density of self-induced GaN nanowires grown by molecular beam epitaxy by Consonni, V., Knelangen, M., Trampert, A., Geelhaar, L., Riechert, H.

“…The evolution of the density of self-induced GaN nanowires as a function of the growth time, gallium rate, and growth temperature has been investigated by…”
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Origin of high-temperature ferromagnetism in (Ga,Mn)N layers grown on 4H–SiC(0001) by reactive molecular-beam epitaxy by Dhar, S., Brandt, O., Trampert, A., Däweritz, L., Friedland, K. J., Ploog, K. H., Keller, J., Beschoten, B., Güntherodt, G.

“…We report on the growth, structural as well as magnetic characterization of (Ga,Mn)N epitaxial layers grown directly on 4H–SiC(0001) by reactive molecular-beam…”
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Li2SnO3 branched nano- and microstructures with intense and broadband white-light emission by García-Tecedor, Miguel, Bartolomé, Javier, Maestre, David, Trampert, Achim, Cremades, Ana

“…Exploiting the synergy between microstructure, morphology and dimensions by suitable nanomaterial engineering, can effectively upgrade the physical properties…”
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Exciton recombination at crystal-phase quantum rings in GaAs/InxGa1−xAs core/multishell nanowires by Corfdir, P, Lewis, R B, Marquardt, O, Küpers, H, Grandal, J, Dimakis, E, Trampert, A, Geelhaar, L, Brandt, O, Phillips, R T

“…We study the optical properties of coaxial GaAs/InxGa1−xAs core/multishell nanowires with x between 0.2 and 0.4 at 10 K. The evolution of the photoluminescence…”
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