Search Results - "TOROPOV, A. I"

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  1. 1

    Substitution of Phosphorus at the InP(001) Surface Upon Annealing in an Arsenic Flux by Dmitriev, D. V., Kolosovsky, D. A., Fedosenko, E. V., Toropov, A. I., Zhuravlev, K. S.

    Published in Semiconductors (Woodbury, N.Y.) (01-11-2021)
    “…Changes in the structure and elemental composition of the surface of the epitaxy-ready InP(001) substrate in an As flux in ultrahigh vacuum are studied in situ…”
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  2. 2

    High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures by Zhuravlev, K. S., Gilinsky, A. M., Chistokhin, I. B., Valisheva, N. A., Dmitriev, D. V., Toropov, A. I., Aksenov, M. S., Chizh, A. L., Mikitchuk, K. B.

    Published in Technical physics (01-09-2021)
    “…The design and fabrication technology of high-power Schottky-barrier microwave mesa photodiodes from 10 to 40 μm in diameter back-illuminated through the…”
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  3. 3

    Nonclassical Light Sources Based on Selectively Positioned Deterministic Microlens Structures and (111) In(Ga)As Quantum Dots by Derebezov, I. A., Gaisler, V. A., Gaisler, A. V., Dmitriev, D. V., Toropov, A. I., von Helversen, M., de la Haye, C., Bounouar, S., Reitzenstein, S.

    Published in Semiconductors (Woodbury, N.Y.) (01-10-2019)
    “…The results of investigations of the optical characteristics of nonclassical light sources based on selectively positioned microlens structures and single…”
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  4. 4

    Spectroscopy of Single AlInAs and (111)-Oriented InGaAs Quantum Dots by Derebezov, I. A., Gaisler, V. A., Gaisler, A. V., Dmitriev, D. V., Toropov, A. I., von Helversen, M., de la Haye, C., Bounouar, S., Reitzenstein, S.

    Published in Semiconductors (Woodbury, N.Y.) (01-11-2018)
    “…A system of AlInAs- and InGaAs(111)-based quantum dots is studied. The use of wide-gap Al x In 1 – x As alloys as a basis for quantum dots provides a means for…”
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  5. 5

    Quantum Hall ferromagnet at high filling factors: A magnetic-field-induced Stoner transition by Piot, B. A., Maude, D. K., Henini, M., Wasilewski, Z. R., Friedland, K. J., Hey, R., Ploog, K. H., Toropov, A. I., Airey, R., Hill, G.

    “…Spin splitting in the integer quantum Hall effect is investigated for a series of Al$_{x}$Ga$_{1-x}$As/GaAs heterojunctions and quantum wells…”
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  6. 6

    Non-classical light emission from a single electrically driven quantum dot by Scholz, M, Büettner, S, Benson, O, Toropov, A I, Bakarov, A K, Kalagin, A K, Lochmann, A, Stock, E, Schulz, O, Hopfer, F, Haisler, V A, Bimberg, D

    Published in Optics express (23-07-2007)
    “…Easy to handle light sources with non-classical emission features are strongly demanded in the growing field of quantum communication. We report on…”
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  7. 7

    Investigation of Intermediate Stage of Template Etching with Metal Droplets by Wetting Angle Analysis on (001) GaAs Surface by Lyamkina, AA, Dmitriev, DV, Galitsyn, Yu G, Kesler, VG, Moshchenko, SP, Toropov, AI

    Published in Nanoscale research letters (01-01-2011)
    “…In this work, we study metal droplets on a semiconductor surface that are the initial stage for both droplet epitaxy and local droplet etching. The…”
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  8. 8

    Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate by Burlakov, I. D., Boltar, K. O., Vlasov, P. V., Lopukhin, A. A., Toropov, A. I., Zhuravlev, K. S., Fadeev, V. V.

    “…Photoelectric characteristics of a 320 × 256-element focal plane array (FPA) with a pitch of 30 μm, whose photosensitive element is formed in the InSb…”
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  10. 10

    Monolithically integrated single quantum dots coupled to bowtie nanoantennas by Lyamkina, A A, Schraml, K, Regler, A, Schalk, M, Bakarov, A K, Toropov, A I, Moshchenko, S P, Kaniber, Michael

    Published in Optics express (12-12-2016)
    “…Deterministically integrating semiconductor quantum emitters with plasmonic nano-devices paves the way towards chip-scale integrable, true nanoscale quantum…”
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  11. 11

    Photon Detectors and Emitters for Quantum Communication Systems and Quantum Frequency Standards by Preobrazhenskii, V. V., Chistokhin, I. B., Ryabtsev, I. I., Haisler, V. A., Toropov, A. I.

    “…A brief overview is presented of results obtained at the Rzhanov Institute of Semiconductor Physics in the development of photon detectors and emitters…”
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  12. 12

    Non-radiative energy transfer in quantum dot ensemble mediated by localized surface plasmon by Lyamkina, A. A., Dmitriev, D. V., Toropov, A. I., Moshchenko, S. P.

    Published in Applied physics letters (04-01-2017)
    “…Exciton-plasmon interaction was studied experimentally in structures with InAs/AlGaAs quantum dots (QDs) and indium nanoclusters grown by molecular beam…”
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  13. 13

    Actuation and transduction of resonant vibrations in GaAs/AlGaAs-based nanoelectromechanical systems containing two-dimensional electron gas by Shevyrin, A. A., Pogosov, A. G., Budantsev, M. V., Bakarov, A. K., Toropov, A. I., Rodyakina, E. E., Shklyaev, A. A.

    Published in Applied physics letters (04-05-2015)
    “…Driven vibrations of a nanoelectromechanical system based on GaAs/AlGaAs heterostructure containing two-dimensional electron gas are experimentally…”
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  14. 14

    High-Power High-Speed Schottky Photodiodes for Analog Fiber-Optic Microwave Signal Transmission Lines by Chizh, A. L., Mikitchuk, K. B., Zhuravlev, K. S., Dmitriev, D. V., Toropov, A. I., Valisheva, N. A., Aksenov, M. S., Gilinsky, A. M., Chistokhin, I. B.

    Published in Technical physics letters (01-07-2019)
    “…Design and manufacturing technology of high-power microwave Schottky photodiodes with microstripe leads have been developed based on an InAlAs/InGaAs…”
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    The features of ballistic electron transport in a suspended quantum point contact by Shevyrin, A. A., Pogosov, A. G., Budantsev, M. V., Bakarov, A. K., Toropov, A. I., Ishutkin, S. V., Shesterikov, E. V.

    Published in Applied physics letters (19-05-2014)
    “…A suspended quantum point contact and the effects of the suspension are investigated by performing identical electrical measurements on the same experimental…”
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  17. 17

    Kinetics of Structural Changes on GaSb(001) Singular and Vicinal Surfaces During the UHV Annealing by Vasev, A. V., Putyato, M. A., Preobrazhenskii, V. V., Bakarov, A. K., Toropov, A. I.

    Published in Semiconductors (Woodbury, N.Y.) (01-05-2018)
    “…The dynamics of processes of antimony desorption was investigated on the singular and vicinal GaSb(001) surface by RHEED method. The role of the terraces edges…”
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  18. 18

    Mobility of the Two-Dimensional Electron Gas in DA-pHEMT Heterostructures with Various δ–n-Layer Profile Widths by Protasov, D. Yu, Bakarov, A. K., Toropov, A. I., Ber, B. Ya, Kazantsev, D. Yu, Zhuravlev, K. S.

    Published in Semiconductors (Woodbury, N.Y.) (01-01-2018)
    “…The effect of the silicon-atom distribution profile in donor δ-layers of AlGaAs/InGaAs/AlGaAs heterostructures with donor–acceptor doping on the mobility of…”
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  19. 19

    Increasing Saturated Electron-Drift Velocity in Donor–Acceptor Doped pHEMT Heterostructures by Protasov, D. Yu, Gulyaev, D. V., Bakarov, A. K., Toropov, A. I., Erofeev, E. V., Zhuravlev, K. S.

    Published in Technical physics letters (01-03-2018)
    “…Field dependences of the electron-drift velocity in typical pseudomorphic high-electron-mobility transistor (pHEMT) heteroepitaxial structures (HESs) and in…”
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  20. 20

    AlInAs quantum dots by Gaisler, A. V., Derebezov, I. A., Gaisler, V. A., Dmitriev, D. V., Toropov, A. I., Kozhukhov, A. S., Shcheglov, D. V., Latyshev, A. V., Aseev, A. L.

    Published in JETP letters (2017)
    “…A system of quantum dots on the basis of Al x In 1-x As/Al y Ga 1-y As solid solutions has been studied. The usage of broadband Al x In 1-x solid solutions as…”
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