Search Results - "TOROPOV, A. I"
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Substitution of Phosphorus at the InP(001) Surface Upon Annealing in an Arsenic Flux
Published in Semiconductors (Woodbury, N.Y.) (01-11-2021)“…Changes in the structure and elemental composition of the surface of the epitaxy-ready InP(001) substrate in an As flux in ultrahigh vacuum are studied in situ…”
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High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures
Published in Technical physics (01-09-2021)“…The design and fabrication technology of high-power Schottky-barrier microwave mesa photodiodes from 10 to 40 μm in diameter back-illuminated through the…”
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Nonclassical Light Sources Based on Selectively Positioned Deterministic Microlens Structures and (111) In(Ga)As Quantum Dots
Published in Semiconductors (Woodbury, N.Y.) (01-10-2019)“…The results of investigations of the optical characteristics of nonclassical light sources based on selectively positioned microlens structures and single…”
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Spectroscopy of Single AlInAs and (111)-Oriented InGaAs Quantum Dots
Published in Semiconductors (Woodbury, N.Y.) (01-11-2018)“…A system of AlInAs- and InGaAs(111)-based quantum dots is studied. The use of wide-gap Al x In 1 – x As alloys as a basis for quantum dots provides a means for…”
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Quantum Hall ferromagnet at high filling factors: A magnetic-field-induced Stoner transition
Published in Physical review. B, Condensed matter and materials physics (01-12-2005)“…Spin splitting in the integer quantum Hall effect is investigated for a series of Al$_{x}$Ga$_{1-x}$As/GaAs heterojunctions and quantum wells…”
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Non-classical light emission from a single electrically driven quantum dot
Published in Optics express (23-07-2007)“…Easy to handle light sources with non-classical emission features are strongly demanded in the growing field of quantum communication. We report on…”
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Investigation of Intermediate Stage of Template Etching with Metal Droplets by Wetting Angle Analysis on (001) GaAs Surface
Published in Nanoscale research letters (01-01-2011)“…In this work, we study metal droplets on a semiconductor surface that are the initial stage for both droplet epitaxy and local droplet etching. The…”
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Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate
Published in Journal of communications technology & electronics (01-03-2017)“…Photoelectric characteristics of a 320 × 256-element focal plane array (FPA) with a pitch of 30 μm, whose photosensitive element is formed in the InSb…”
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Monolithically integrated single quantum dots coupled to bowtie nanoantennas
Published in Optics express (12-12-2016)“…Deterministically integrating semiconductor quantum emitters with plasmonic nano-devices paves the way towards chip-scale integrable, true nanoscale quantum…”
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Photon Detectors and Emitters for Quantum Communication Systems and Quantum Frequency Standards
Published in Bulletin of the Russian Academy of Sciences. Physics (01-09-2024)“…A brief overview is presented of results obtained at the Rzhanov Institute of Semiconductor Physics in the development of photon detectors and emitters…”
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Non-radiative energy transfer in quantum dot ensemble mediated by localized surface plasmon
Published in Applied physics letters (04-01-2017)“…Exciton-plasmon interaction was studied experimentally in structures with InAs/AlGaAs quantum dots (QDs) and indium nanoclusters grown by molecular beam…”
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Actuation and transduction of resonant vibrations in GaAs/AlGaAs-based nanoelectromechanical systems containing two-dimensional electron gas
Published in Applied physics letters (04-05-2015)“…Driven vibrations of a nanoelectromechanical system based on GaAs/AlGaAs heterostructure containing two-dimensional electron gas are experimentally…”
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High-Power High-Speed Schottky Photodiodes for Analog Fiber-Optic Microwave Signal Transmission Lines
Published in Technical physics letters (01-07-2019)“…Design and manufacturing technology of high-power microwave Schottky photodiodes with microstripe leads have been developed based on an InAlAs/InGaAs…”
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Ferromagnetic HfO2/Si/GaAs interface for spin-polarimetry applications
Published in Applied physics letters (21-09-2015)“…In this letter, we present electrical and magnetic characteristics of HfO2-based metal-oxide-semiconductor capacitors (MOSCAPs), along with the effect of…”
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The features of ballistic electron transport in a suspended quantum point contact
Published in Applied physics letters (19-05-2014)“…A suspended quantum point contact and the effects of the suspension are investigated by performing identical electrical measurements on the same experimental…”
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Kinetics of Structural Changes on GaSb(001) Singular and Vicinal Surfaces During the UHV Annealing
Published in Semiconductors (Woodbury, N.Y.) (01-05-2018)“…The dynamics of processes of antimony desorption was investigated on the singular and vicinal GaSb(001) surface by RHEED method. The role of the terraces edges…”
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Mobility of the Two-Dimensional Electron Gas in DA-pHEMT Heterostructures with Various δ–n-Layer Profile Widths
Published in Semiconductors (Woodbury, N.Y.) (01-01-2018)“…The effect of the silicon-atom distribution profile in donor δ-layers of AlGaAs/InGaAs/AlGaAs heterostructures with donor–acceptor doping on the mobility of…”
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Increasing Saturated Electron-Drift Velocity in Donor–Acceptor Doped pHEMT Heterostructures
Published in Technical physics letters (01-03-2018)“…Field dependences of the electron-drift velocity in typical pseudomorphic high-electron-mobility transistor (pHEMT) heteroepitaxial structures (HESs) and in…”
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AlInAs quantum dots
Published in JETP letters (2017)“…A system of quantum dots on the basis of Al x In 1-x As/Al y Ga 1-y As solid solutions has been studied. The usage of broadband Al x In 1-x solid solutions as…”
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