Search Results - "TOMITORI, M"

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    Local protrusions formed on Si(111) surface by surface melting and solidification under applied tensile stress by Nishimura, T., Tomitori, M.

    Published in Applied physics letters (19-09-2016)
    “…The surface structure and composition of Si(111) was modified, by heating it to 1300 °C in ultrahigh vacuum under an external tensile stress. A stress of…”
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    Journal Article
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    Observation of electronic states on Si(111)-(7 x 7) through short-range attractive force with noncontact atomic force spectroscopy by Arai, T, Tomitori, M

    Published in Physical review letters (17-12-2004)
    “…We experimentally reveal that the short-range attractive force between a Si tip and a Si(111)-(7 x 7) surface is enhanced at specified bias voltages; we…”
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    Journal Article
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    Hexagonal arrangement of Ge clusters self-organized on a template of half unit cells of Si(1 1 1)-7 × 7 observed by scanning tunneling microscopy by Ansari, Z.A., Arai, T., Tomitori, M.

    Published in Surface science (01-01-2005)
    “…We observe initial nucleation of Ge clusters and their arrangement on Si(1 1 1)-7 × 7 by ultrahigh-vacuum scanning tunneling microscopy on an atomic scale;…”
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    Journal Article
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    Interplay between nonlinearity, scan speed, damping, and electronics in frequency modulation atomic-force microscopy by Gauthier, Michel, Pérez, Ruben, Arai, Toyoko, Tomitori, Masahiko, Tsukada, Masaru

    Published in Physical review letters (30-09-2002)
    “…Numerical simulations of the frequency modulation atomic force microscope, including the whole dynamical regulation by the electronics, show that the…”
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    Journal Article
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    Bias dependence of Si(111)7×7 images observed by noncontact atomic force microscopy by Arai, T, Tomitori, M

    Published in Applied surface science (02-04-2000)
    “…Noncontact atomic force microscopy (nc-AFM) imaging of a Si(111)7×7 surface has been done in order to examine the bias dependence of the contrast of Si…”
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    Journal Article
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    Tunneling condition dependence of electron standing waves in vacuum gaps on Au(111) and Si(001) observed by scanning tunneling microscopy by Suganuma, Y., Tomitori, M.

    Published in Surface science (10-09-1999)
    “…Using a scanning tunneling microscope, the differential conductance (d I/d V) versus the applied bias voltage ( V) on Au(111) and n- and p-type Si(001)…”
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    Journal Article Conference Proceeding
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    Visualization of tip-surface geometry at atomic distance by TEM-STM holder by Naitoh, Y., Takayanagi, K., Tomitori, M.

    Published in Surface science (20-06-1996)
    “…To clarify the tip-surface interaction of the scanning tunneling microscope (STM) by using a UHV transmission electron microscope (TEM), we specially designed…”
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    Journal Article
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    Analysis of electron standing waves in a vacuum gap of scanning tunneling microscopy: Measurement of band bending through energy shifts of electron standing wave by Suganuma, Y., Tomitori, M.

    “…Numerical simulation for the electron standing wave excited between a scanning tunneling microscopy (STM) tip and a sample in a field emission regime has been…”
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    Journal Article
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    A Si nanopillar grown on a Si tip by atomic force microscopy in ultrahigh vacuum for a high-quality scanning probe by Arai, Toyoko, Tomitori, Masahiko

    Published in Applied physics letters (14-02-2005)
    “…We grow a Si nanopillar on a commercial Si tip on an atomic force microscopy (AFM) cantilever using AFM in ultrahigh vacuum for a high-quality scanning force…”
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    Journal Article
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