Search Results - "TOBIN, S. P"

HgCdTe MWIR back-illuminated electron-initiated avalanche photodiode arrays by REINE, M. B, MARCINIEC, J. W, WONG, K. K, PARODOS, T, MULLARKEY, J. D, LAMARRE, P. A, TOBIN, S. P, GUSTAVSEN, K. A, WILLIAMS, G. M

“…This paper reports data for back-illuminated planar n-on-p HgCdTe electron-initiated avalanche photodiode (e-APD) 4 × 4 arrays with large unit cells (250 × 250…”
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Characterization of HgCdTe MWIR Back-Illuminated Electron-Initiated Avalanche Photodiodes by Reine, M.B., Marciniec, J.W., Wong, K.K., Parodos, T., Mullarkey, J.D., Lamarre, P.A., Tobin, S.P., Minich, R.W., Gustavsen, K.A., Compton, M., Williams, G.M.

“…This article reports new characterization data for large-area (250  μ m ×  250  μ m) back-illuminated planar n -on- p HgCdTe electron-initiated avalanche…”
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Characterization of Dislocations in HgCdTe Heteroepitaxial Layers Using a New Substrate Removal Technique by Lamarre, P., Fulk, C., D’Orsogna, D., Bellotti, E., Smith, F., LoVecchio, P., Reine, M. B., Parodos, T., Marciniec, J., Tobin, S. P., Markunas, J.

“…Dislocations are known to influence the electrical and optical properties of long-wavelength infrared (LWIR) HgCdTe detectors and have been shown to limit the…”
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A Novel Stress Characterization Technique for the Development of Low-Stress Ohmic Contacts to HgCdTe by D’Orsogna, D., Lamarre, P., Bellotti, E., Barbone, P. E., Smith, F., Fulk, C., LoVecchio, P., Reine, M. B., Tobin, S. P., Markunas, J.

“…HgCdTe material intended for long-wavelength infrared detection is particularly susceptible to damage from stress. As a result, an ideal ohmic contact needs to…”
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An algorithm for suboptimally placed supraglottic airway devices: the choice of videolaryngoscope by Tobin, S.P., Maloney, D.G., Walker, J.D.

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Effects of Na2S and (NH4)2S edge passivation treatments on the dark current-voltage characteristics of GaAs pn diodes by CARPENTER, M. S, MELLOCH, M. R, LUNDSTROM, M. S, TOBIN, S. P

“…The dark current-voltage characteristics of GaAs pn homojunctions whose surfaces have been passivated with Na2S and (NH4)2S chemical treatments have been…”
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HgCdTe growth on (552) oriented CdZnTe by metalorganic vapor phase epitaxy by MITRA, P, CASE, F. C, GLASS, H. L, SPEZIALE, V. M, FLINT, J. P, TOBIN, S. P, NORTON, P. W

“…We report the growth of HgCdTe on (552)B CdZnTe by metalorganic vapor phase epitaxy (MOVPE). The (552) plane is obtained by 180 degree rotation of the (211)…”
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Ultralong minority-carrier lifetime epitaxial GaAs by photon recycling by AHRENKIEL, R. K, DUNLAVY, D. J, KEYES, B, VERNON, S. M, DIXON, T. M, TOBIN, S. P, MILLER, K. L, HAYES, R. E

“…The minority-carrier lifetime has been measured by time-resolved photoluminescence in epitaxial films of GaAs grown by metalorganic chemical vapor deposition…”
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Composition and thickness control of thin LPE HgCdTe layers using x-ray diffraction by Tobin, S P, Hutchins, M A, Norton, P W

“…Double-axis X-ray rocking curve measurements have been used to nondestructively characterize the composition profile of HgCdTe heterojunction photodiode…”
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The relationship between lattice matching and crosshatch in liquid phase epitaxy HgCdTe on CdZnTe substrates by TOBIN, S. P, SMITH, F. T. J, NORTON, P. W, WU, J, DUDLEY, M, DI MARZIO, D, CASAGRANDE, L. G

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Hall effect characterization of LPE HgCdTe P/n heterojunctions by TOBIN, S. P, PULTZ, G. N, KRUEGER, E. E, KESTIGIAN, M, WONG, K.-K, NORTON, P. W

“…Field and temp. dependences of Hall coeff. are used to simultaneously extract information about the p and n layers in long-wavelength ir title heterojunctions…”
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A comparison of techniques for nondestructive composition measurements in CdZnTe substrates by TOBIN, S. P, TOWER, J. P, LEE, J, BALASUBRAMANIAN, R, BOLLONG, A. B, STEINER, T. W, THEWALT, M. L. W, BOWEN, D. K, TANNER, B. K, NORTON, P. W, CHANDLER-HOROWITZ, D, AMIRTHARAJ, P. M, LOPES, V. C, DUNCAN, W. M, SYLLAIOS, A. J, ARD, C. K, GILES, N. C

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CdZnTe substrate impurities and their effects on liquid phase epitaxy HgCdTe by TOWER, J. P, TOBIN, S. P, KESTIGIAN, M, NORTON, P. W, BOLLONG, A. B, SCHAAKE, H. F, ARD, C. K

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Improved operability in Hg1−xCdxTe detector arrays by Hutchins, M. A., Smith, F. T. J., Tobin, S. P., Norton, P. W.

“…Progress has been made in identifying the source of outages and eliminating them from LPE grown title P-on-n structures. Failure analysis was performed on…”
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Trace copper measurements and electrical effects in LPE HgCdTe by Tower, J P, Tobin, S P, Norton, P W, Bollong, A B

“…Recent improvements in sputter initiated resonance ionization spectroscopy (SIRIS) have now made it possible to measure copper in HgCdTe films into the low…”
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X-ray diffraction characterization of LPE HgCdTe heterojunction photodiode material by TOBIN, S. P, KRUEGER, E. E, PULTZ, G. N, KESTIGIAN, M, WONG, K.-K, NORTON, P. W

“…Using asymmetric 246 reflection, small composition differences (0.03) can be resolved. High-resolution XRD is a nondestructive, relatively rapid technique for…”
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Minority-carrier properties of GaAs on silicon by AHRENKIEL, R. K, AL-JASSIM, M. M, DUNLAVY, D. J, JONES, K. M, VERNON, S. M, TOBIN, S. P, HAVEN, V. E

“…The minority-carrier lifetimes of the heteroepitaxial system of GaAs on Si are limited by recombination at mismatch dislocations. Here we show that increasing…”
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Advances in composition control for 16 mu m LPE P-on-n HgCdTe heterojunction photodiodes for remote sensing applications at 60 K by Tobin, S P, Weiler, M H, Hutchins, M A, Parodos, T, Norton, P W

“…With good composition control in both p-type cap and n-type base LPE layers, it is possible to make barrier-free two-layer P-on-n HgCdTe heterojunction…”
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HgCdTe photodetectors with negative luminescent efficiencies >80 by Bewley, W. W., Jurkovic, M. J., Felix, C. L., Lindle, J. R., Vurgaftman, I., Meyer, J. R., Aifer, E. H., Butler, J. E., Tobin, S. P., Norton, P. W., Hutchins, M. A.

“…We have characterized the negative luminescent properties of photovoltaic HgCdTe detector structures with a room-temperature cutoff of 4.2 μm. Using an optical…”
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Sequential etch analysis of electron injection in p+-GaAs by KLAUSMEIER-BROWN, M. E, KYONO, C. S, DEMOULIN, P. D, TOBIN, S. P, LUNDSTROM, M. S, MELLOCH, M. R

“…The influence of heavy impurity doping of electron injection currents in p+- n diodes is investigated experimentally. By extracting the n = 1 diffusion current…”
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