Search Results - "TIWALD, T. E"

In-situ monitoring of alkanethiol self-assembled monolayer chemisorption with combined spectroscopic ellipsometry and quartz crystal microbalance techniques by Rodenhausen, K.B., Duensing, B.A., Kasputis, T., Pannier, A.K., Hofmann, T., Schubert, M., Tiwald, T.E., Solinsky, M., Wagner, M.

“…Self-assembled monolayers (SAMs) formed via chemisorption are important for a variety of surface enhancement and biological applications. We demonstrate that…”
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Micelle-assisted bilayer formation of cetyltrimethylammonium bromide thin films studied with combinatorial spectroscopic ellipsometry and quartz crystal microbalance techniques by Rodenhausen, K.B., Guericke, M., Sarkar, A., Hofmann, T., Ianno, N., Schubert, M., Tiwald, T.E., Solinsky, M., Wagner, M.

“…We report on a combinatorial approach to study the formation of ultra-thin organic films using in-situ spectroscopic ellipsometry and quartz crystal…”
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Improved model for the analysis of FTIR transmission spectra from multilayer HgCdTe structures by DARASELIA, M, CARMODY, M, EDWALL, D. D, TIWALD, T. E

“…This paper reports the further development of the model for the analysis of FTIR transmission spectra from the dual-color Hg^sub 1-x^Cd^sub x^Te (MCT)…”
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Large-area microfocal spectroscopic ellipsometry mapping of thickness and electronic properties of epitaxial graphene on Si- and C-face of 3C-SiC(111) by Darakchieva, V., Boosalis, A., Zakharov, A. A., Hofmann, T., Schubert, M., Tiwald, T. E., Iakimov, T., Vasiliauskas, R., Yakimova, R.

“…Microfocal spectroscopic ellipsometry mapping of the electronic properties and thickness of epitaxial graphene grown by high-temperature sublimation on 3C-SiC…”
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Combined optical and acoustical method for determination of thickness and porosity of transparent organic layers below the ultra-thin film limit by Rodenhausen, K B, Kasputis, T, Pannier, A K, Gerasimov, J Y, Lai, R Y, Solinsky, M, Tiwald, T E, Wang, H, Sarkar, A, Hofmann, T, Ianno, N, Schubert, M

“…Analysis techniques are needed to determine the quantity and structure of materials composing an organic layer that is below an ultra-thin film limit and in a…”
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Vacuum ultraviolet optical analysis of spin-cast chitosan films modified by succinic anhydride and glycidyl phenyl ether by Nosal, W. H., Thompson, D. W., Tiwald, T. E., Sarkar, S., Subramanian, A., Woollam, J. A.

“…Optical properties of spin‐cast chitosan films were determined in the vacuum ultraviolet (VUV) through visible regions of the spectrum using spectroscopic…”
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Hole diffusion profile in a p-p+ silicon homojunction determined by terahertz and midinfrared spectroscopic ellipsometry by Hofmann, T., Herzinger, C. M., Tiwald, T. E., Woollam, J. A., Schubert, M.

“…Noninvasive optical measurement of hole diffusion profiles in p-p+ silicon homojunction is reported by ellipsometry in the terahertz (0.2–1.5 THz) and…”
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Infrared optical properties of aged porous GaAs by Zangooie, S., Schubert, M., Tiwald, T. E., Woollam, J. A.

“…Aging properties of porous GaAs were investigated nondestructively using variable angle of incidence infrared spectroscopic ellipsometry. In addition to the…”
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Characterization of UV irradiated space application polymers by spectroscopic ellipsometry by Bungay, Corey L., Tiwald, Thomas E., Devries, Michael J., Dworak, Brad J., Woollam, John A.

“…Materials deployed on long‐duration space missions such as the Hubble Space Telescope (HST) and the proposed International Space Station (ISS) are subject to…”
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The Origin of the Berreman Effect in SiC Homostructures by Zollner, St, Carrejo, J. P., Tiwald, T. E., Woollam, J. A.

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Optical investigations of mixed-phase boron nitride thin films by infrared spectroscopic ellipsometry by Schubert, M., Franke, E., Neumann, H., Tiwald, T.E., Thompson, D.W., Woollam, J.A., Hahn, J.

“…We focus on the application of infrared spectroscopic ellipsometry (IRSE) to simultaneously determine phase and microstructure of mixed-phase thin films such…”
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Infrared spectroscopic ellipsometry study of molecular orientation induced anisotropy in polymer substrates by Bungay, Corey, Tiwald, Thomas E.

“…Many commercial products use thin films on polymer substrates. SE has strong potential for measuring films on polymer substrates; however, further research is…”
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Infrared optical properties of mixed-phase thin films studied by spectroscopic ellipsometry using boron nitride as an example by Schubert, M., Rheinländer, B., Franke, E., Neumann, H., Tiwald, T. E., Woollam, J. A., Hahn, J., Richter, F.

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Optical properties of photochromic organic–inorganic composites by Mo, Yeon-Gon, Dillon, R.O, Snyder, P.G, Tiwald, T.E

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Mechanical, geometrical, and electrical characterization of silicon membranes for open stencil masks by Sossna, E., Degen, A., Rangelow, I. W., Drzik, M., Hudek, P., Tiwald, T. E., Woollam, J. A.

“…Silicon membranes are used for stencil masks which are key to charged particle projection lithography, particularly for ion projection lithography, electron…”
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Infrared ellipsometry on hexagonal and cubic boron nitride thin films by Franke, E., Neumann, H., Schubert, M., Tiwald, T. E., Woollam, J. A., Hahn, J.

“…Infrared spectroscopic ellipsometry (IRSE) over the wavelength range from 700 to 3000 cm−1 has been used to study and distinguish the microstructure of…”
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Infrared free carrier response of In0.15Ga0.85As0.17Sb0.83 epilayers on GaSb by Snyder, P.G., Tiwald, T.E., Thompson, D.W., Ianno, N.J., Woollam, J.A., Mauk, M.G., Shellenbarger, Z.A.

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Materials Characterization in the Vacuum Ultraviolet with Variable Angle Spectroscopic Ellipsometry by Wagner, T., Hilfiker, J.N., Tiwald, T.E., Bungay, C.L., Zollner, S.

“…The shift towards shorter wavelengths in the lithographic process has been the driving force for development of a commercial spectroscopic ellipsometer…”
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Hole diffusion profile in a p - p + silicon homojunction determinedby terahertz and midinfrared spectroscopic ellipsometry by Hofmann, T., Herzinger, C. M., Tiwald, T. E., Woollam, J. A., Schubert, M.

“…Noninvasive optical measurement of hole diffusion profiles in p - p + silicon homojunction is reported by ellipsometry in the terahertz (0.2-1.5 THz) and…”
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Interface states in modulation-doped In0.52Al0.48As/In0.53Ga0.47As heterostructures by WON-PYO HONG, JAE-EUNG OH, BHATTACHARYA, P. K, TIWALD, T. E

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