Search Results - "TIMMERING, C. E"

Observation of zero-dimensional states in a one-dimensional electron interferometer by VAN WEES, B. J, KOUWENHOVEN, L. P, HARMANS, C. J. P. M, WILLIAMSON, J. G, TIMMERING, C. E, BROEKAART, M. E. I, FOXON, C. T, HARRIS, J. J

“…Electron transport in a one-dimensional electron interferometer is studied. The apparatus consists of a disk-shaped two-dimensional electron gas, to which…”
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Transport through a finite one-dimensional crystal by KOUWENHOVEN, L. P, HEKKING, F. W. J, VAN WEES, B. J, HARMANS, C. J. P. M, TIMMERING, C. E, FOXON, C. T

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Selective population and detection of edge channels in the fractional quantum hall regime by KOUWENHOVEN, L. P, VAN WEES, B. J, VAN DER VAART, N. C, HARMANS, C. J. P. M, TIMMERING, C. E, FOXON, C. T

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Boron Vapour Phase Doping of Silicon for Bipolar Device Applications by Theunissen, M. J. J., Timmering, C. E., Berkum, J. G. van, Mergler, Y. J.

“…Boron vapour-phase doping (VPD) has been investigated as a possible processing tool for defect-free applications in shallow, vertical and deep junctions in…”
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Submicron YBa2Cu3O7-δ-Ag-YBa2Cu3O7-δ superconducting proximity junctions by GIJS, M. A. M, GESBERS, J. B, VAN DELFT, F. C. M. J. M, TIMMERING, C. E, GERRITS, A. M, SLOB, A

“…Using a deep submicron structuring process for oxide superconducting films, we have fabricated planar YBa2Cu3O7−δ-Ag-YBa2Cu3O7–δ proximity junctions operating…”
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Quantum point contact as a local probe of the electrostatic potential contours by WILLIAMSON, J. G, TIMMERING, C. E, HARMANS, C. J. P. M, HARRIS, J. J, FOXON, C. T

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On the optimization of SiGe-base bipolar transistors by Hueting, R.J.E., Slotboom, J.W., Pruijmboom, A., de Boer, W.B., Timmering, C.E., Cowern, N.E.B.

“…Advanced epitaxial growth of strained SiGe into a Si substrate enhances the freedom for designing high speed bipolar transistors. Devices can be designed by…”
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Copper substrate transfer technology for silicon RF circuits by Dekker, Timmering

“…We present exploratory experiments on the waferscale transfer of silicon RF circuits to copper substrates. This approach allows for a well defined microstrip…”
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Electron-beam collimation with a quantum point contact by Molenkamp, LW, Staring, AA, Beenakker, CW, Eppenga, R, Timmering, CE, Williamson, JG, Harmans, CJ, Foxon, CT

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Permeable Base Transistors with Schottky and junction Gates by van Rijs, F., Oostra, D. J., van Rooij-Mulder, J. M. L., Timmering, C. E.

“…Permeable base transistors (PBT) with metal gates and pn-junction gates have been fabricated with conventional device technology. Measurement results compared…”
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18 ps ECL-gate delay in laterally scaled 30 GHz bipolar transistors by Pruijmboom, A., Timmering, C.E., Hageraats, J.J.E.M.

“…ECL-gate delays as low as 18 ps have been achieved in conventional bipolar technology, with a cut-off frequency f/sub T/ of 30 GHz. Rather than optimizing…”
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Selective-epitaxial base technology with 14 ps ECL-gate delay, for low power wide-band communication systems by Pruijmboom, A., Terpstra, D., Timmering, C.E., de Boer, W.B., Theunissen, M.J.J., Slotboom, J.W., Hueting, R.J.E., Hageraats, J.J.E.W.

“…A silicon bipolar technology is presented that incorporates a selectively epitaxially grown base in a double-polysilicon transistor. Si-bases as well as…”
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Selectively-Implanted Collector Profile Optimisation for High-Speed Vertical Bipolar Transistors by Peter, M.S., Hurkx, G.A.M., Timmering, C.E.

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Submicron YBa2Cu3O(7-delta)-Ag-YBa2Cu3O(7-delta) superconducting proximity junctions by Gijs, M A M, Giesbers, J B, VAN DELFT, FCMJM, TIMMERING, C E, Gerrits, A M, Slob, A

“…A deep submicron structuring process for oxide superconducting films has been used to fabricate planar YBa2Cu3O(7-delta)-Ag-YBa2Cu3O(7-delta) proximity…”
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Contact resistance of TiW to Phase Change Material in the amorphous and crystalline states by Roy, D., in't Zandt, M.A.A., Wolters, R.A.M., Timmering, C.E., Klootwijk, J.H.

“…Electrical characterisation of metal to Phase Change Material (PCM) contacts is necessary for optimum power transfer during switching of a Phase Change Random…”
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Merits and limitations of circular TLM structures for contact resistance determination for novel III-V HBTs by Klootwijk, J.H., Timmering, C.E.

“…This paper discusses merits and limitations of CTLM (Circular Transfer Length Method) contact resistance assessment test structures. Requiring just one…”
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On the Optimisation of SiGe-Base Bipolar Transistors by Hueting, R.J.E., Slotboom, J.W., Pruijmboom, A., de Boer, W.B., Timmering, C.E., Cowern, N.

“…Extensive computer simulations of NPN SiGe-base bipolar transistors were performed to examine the effect of the Ge profile in the electrical characteristics…”
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A 34 GHz fT Bipolar Process with High-Energy-Implanted Collector by Ponomarev, Y.V., Emons, C.H.H., van der Wel, W., van den Berg, M.A., Timmering, C.E., Janssen, A.C.L., Politiek, J.

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Heterojunction bipolar transistors with Si1-x Gex base by Pruijmboom, A., Timmering, C.E., van Rooij-Mulder, J.M.L., Gravesteijn, D.J., de Boer, W.B., Kersten, W.J., Slotboom, J.W., Vriezema, C.J., de Kruif, R.

“…Mesa-isolated bipolar transistors with strained Si 1-x Ge z -base layers, grown by molecular beam epitaxy end atmospheric pressure chemical vapour deposition,…”
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