Search Results - "THRUSH, C. M"

Doping profiles for indium antimonide magnetoresistors by Partin, D.L., Heremans, J., Thrush, C.M.

“…Indium antimonide is of interest for magnetoresistors in position- and speed-sensing applications. These sensors are fabricated as thin-film elements in order…”
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The influence of stoichiometry on the growth of tellurium-doped indium antimonide for magnetic field sensors by Partin, D.L., Pelczynski, M., Cooke, P., Green, L., Heremans, J., Thrush, C.M.

“…Indium antimonide magnetoresistors are used as magnetic position sensors in very demanding automotive environments such as crankshaft and camshaft sensors for…”
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Growth of tin-doped indium antimonide for magnetoresistors by Partin, D. L., Green, L., Heremans, J., Thrush, C. M.

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Two-dimensional electron gas magnetic field sensors by HEREMANS, J, PARTIN, D. L, MORELLI, D. T, FULLER, B. K, THRUSH, C. M

“…We describe the use of accumulation layers of electron charge in applications as magnetoresistive devices. We consider two such systems: an InGaAs/InP…”
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Geometrical magnetothermopower in semiconductors by Heremans, J P, Thrush, C M, Morelli, D T

“…The geometry of a semiconductor sample can be designed to create a very large change of the thermoelectric power in a magnetic field, similar to the effects of…”
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Temperature stable Hall effect sensors by Partin, D.L., Heremans, J.P., Schroeder, T., Thrush, C.M., Flores-Mena, L.A.

“…Magnetic field sensors are needed for high-accuracy position, angle, force, strain, torque, and current flow measurements. Molecular beam epitaxy was used to…”
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Growth and characterization of indium arsenide thin films by PARTIN, D. L, GREEN, L, MORELLI, D. T, HEREMANS, J, FULLER, B. K, THRUSH, C. M

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Wavelength coverage of lead-europium-selenide-telluride diode lasers by PARTIN, D. L, THRUSH, C. M

“…Diode lasers made from a new semiconductor material, Pb1−xEuxSeyTe1−y, have recently been developed for sensor applications. This material is grown by…”
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Growth and characterization of epitaxial bismuth films by PARTIN, D. L, HEREMANS, J, MORELLI, D. T, THRUSH, C. M, OLK, C. H, PERRY, T. A

“…The growth of the first thin (0.1-2 mu m) epitaxial films of pure bismuth using molecular-beam-epitaxy techniques is described. These structures were grown at…”
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Temperature dependence of relaxation times in electron focusing and antidot structures made from In0.53Ga0.47As/InP heterojunctions by Heremans, J., Fuller, B.K., Thrush, C.M., Bayot, V.

“…The magnetoresistance of antidot lattices and the magnetic field dependence of the three-terminal resistance of transverse electron focusing (TEF) devices is…”
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Samarium doping of molecular‐beam epitaxially grown InSb on InP by Partin, D. L., Heremans, J., Thrush, C. M., Morelli, D. T.

“…We report here on the transport properties epitaxial InSb films grown by molecular‐beam epitaxy and doped with Sm in the atom density range from 6.1×1016 cm−3…”
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Indium antimonide doped with manganese grown by molecular beam epitaxy by Partin, D.L., Heremans, J., Thrush, C.M.

“…Indium antimonide is of interest for infrared detecting and emitting devices and for magnetic field sensors. In this study, indium antimonide doped with…”
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Properties of tellurium-doped epitaxial bismuth films by HEREMANS, J, MORELLI, D. T, PARTIN, D. L, OLK, C. H, THRUSH, C. M, PERRY, T. A

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Cyclotron resonance in epitaxial Bi1-xSbx films grown by molecular-beam epitaxy by HEREMANS, J, PARTIN, D. L, THRUSH, C. M, KARCZEWSKI, G, RICHARDSON, M. S, FURDYNA, J. K

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Erbium doping of molecular‐beam epitaxially grown InSb on InP by Heremans, J., Partin, D. L., Morelli, D. T., Thrush, C. M.

“…The transport properties of molecular‐beam epitaxially grown InSb films doped with Er (atom densities NEr from 4.3×1016 cm−3 to 3.6×1020 cm−3) are reported at…”
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Spin–disorder scattering in europium‐doped indium antimonide thin films by Morelli, D. T., Partin, D. L., Heremans, J., Thrush, C. M.

“…We have studied the low temperature magnetoresistance of In1−x Eu x Sb for a range of europium concentrations. We find that the addition of the rare earth…”
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Lead strontium telluride and lead barium telluride grown by molecular‐beam epitaxy by Partin, D. L., Thrush, C. M., Clemens, B. M.

“…Long wavelength diode lasers operating in the 3–10‐μm wavelength range are of interest as optical sources for future fiber optics communications and sensor…”
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Infrared absorber for pyroelectric detectors by Thompson, M. P., Troxell, J. R., Murray, M. E., Thrush, C. M., Mantese, J. V.

“…A quarter-wavelength absorber structure was developed for pyroelectric detector applications in the 2.5 – 3.5 μ m range. The absorber consisting of Pt and…”
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Magnetic-field dependence of PbTe-EuTe transistor characteristics by PARTIN, D. L, HEREMANS, J, THRUSH, C. M, GREEN, L, OLK, C. H

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Lead calcium telluride grown by molecular beam epitaxy by Partin, D. L., Clemens, B. M., Swets, D. E., Thrush, C. M.

“…PbCaTe has been grown for the first time using the technique of molecular beam epitaxy. Source ovens containing Ca, Te, PbTe, Tl2Te (p dopant) and Bi2Te3 (n…”
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