Search Results - "TEH, W. H"

Impact of stroke‐associated pneumonia on mortality, length of hospitalization, and functional outcome by Teh, W. H., Smith, C. J., Barlas, R. S., Wood, A. D., Bettencourt‐Silva, J. H., Clark, A. B., Metcalf, A. K., Bowles, K. M., Potter, J. F., Myint, P. K.

“…Objectives Stroke‐associated pneumonia (SAP) is common and associated with adverse outcomes. Data on its impact beyond 1 year are scarce. Materials and methods…”
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Multi-strata subsurface laser die singulation to enable defect-free ultra-thin stacked memory dies by Teh, W. H., Boning, D., Welsch, R.

“…We report the extension of multi-strata subsurface infrared (1.342 μm) pulsed laser die singulation to the fabrication of defect-free ultra-thin stacked memory…”
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SU-8 for real three-dimensional subdiffraction-limit two-photon microfabrication by Teh, W. H., Dürig, U., Salis, G., Harbers, R., Drechsler, U., Mahrt, R. F., Smith, C. G., Güntherodt, H.-J.

“…We report the inherent utility of two-photon-absorption (TPA) in the fabrication of real three-dimensional (3D) structures with subdiffraction-limit…”
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Cross-linked PMMA as a low-dimensional dielectric sacrificial layer by Teh, W.H., Chi-Te Liang, Graham, M., Smith, C.G.

“…A surface nanomachining fabrication process using electron beam cross-linked poly(methyl) methacrylate (PMMA) has been developed and characterized. PMMA with…”
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300-mm Production-Worthy Magnetically Enhanced Non-Bosch Through-Si-Via Etch for 3-D Logic Integration by Teh, W H, Caramto, R, Chidambaram, Thenappan, Wei Wang, Arkalgud, Sitaram R, Saito, T, Maruyama, K, Maekawa, Kaoru

“…We report a process development route toward 300-mm production-worthy non-Bosch through-silicon-via (TSV) etch with critical dimensions between 1-5 ¿m and…”
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Etching control of benzocyclobutene in CF4/O2 and SF6/O2 plasmas with thick photoresist and titanium masks by LIAO, E. B, TEH, W. H, TEOH, K. W, TAY, A. A. O, FENG, H. H, KUMAR, R

“…By using thick photoresist AZ9260 and sputtered Ti film as masks, dry etching characteristics of benzocyclobutene (BCB), including etch rates, selectivities…”
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200 mm wafer-scale substrate transfer of 0.13 μ m Cu ∕ low- k (Black Diamond™) dual-damascene interconnection to glass substrates by Teh, W. H., Kumar, R., Kwong, D. L.

“…We report a low-temperature (350°C) pulsed-voltage anodic bonding followed by grind/etch-back method for 200 mm wafer-scale substrate transfer of 0.13 μ m Cu ∕…”
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Quality control of semi-continuous mobility size-fractionated particle number concentration data by Yu, Rong Chun, Teh, Hee Wen, Jaques, Peter A., Sioutas, Constantinos, Froines, John R.

“…Fine and ultrafine particles have been postulated to play an important role in the association between ambient particulate matters and adverse health effects…”
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200 mm wafer-scale epitaxial transfer of single crystal Si on glass by anodic bonding of silicon-on-insulator wafers by Teh, W. H., Trigg, Alastair, Tung, C. H., Kumar, R., Balasubramanian, N., Kwong, D. L.

“…We report a low-temperature (350 °C) anodic bonding followed by grind/etch-back method for a 200 mm wafer-scale epitaxial transfer of ultrathin (1.9 kÅ) single…”
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200-mm wafer-scale transfer of 0.18-μm dual-damascene Cu/SiO2 interconnection system to plastic substrates by Teh, W.H., Guo Lihui, Kumar, R., Kwong, D.-L.

“…We report a low-temperature (<200/spl deg/C) 200-mm wafer-scale transfer of a 0.18-μm dual-damascene Cu/SiO 2 interconnection system to FR-4 plastic substrates…”
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Study of microstructure and resistivity evolution for electroplated copper films at near-room temperature by Teh, W.H, Koh, L.T, Chen, S.M, Xie, J, Li, C.Y, Foo, P.D

“…A study on the self-annealing of various electroplated (ECP) blanket copper films of different thickness is performed on 8″ wafers. Uncorrelated evolution of…”
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Fabrication of quasi-three-dimensional micro/nanomechanical components using electron beam cross-linked poly (methyl methacrylate) resist by Teh, W. H., Smith, C. G.

“…We present a useful, flexible, and simple surface nanomachining technique which employs electron beam cross-linked poly (methyl methacrylate) (PMMA) as a…”
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Switching characteristics of electrostatically actuated miniaturized micromechanical metallic cantilevers by Teh, W. H., Luo, J. K., Graham, M. R., Pavlov, A., Smith, C. G.

“…We report the fabrication and characterization of the smallest near-curvature-free electrostatically actuated Ni micromechanical switches reported to date. Our…”
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Post-bond sub-500 nm alignment in 300 mm integrated face-to-face wafer-to-wafer Cu-Cu thermocompression, Si-Si fusion and oxideoxide fusion bonding by Teh, W H, Deeb, C, Burggraf, J, Arazi, D, Young, R, Senowitz, C, Buxbaum, A

“…We report recent advances in tool and process hardening of a first of its kind 300 mm wafer-to-wafer (WtW) preprocessing, aligning, and bonding integrated…”
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Recent advances in submicron alignment 300 mm copper-copper thermocompressive face-to-face wafer-to-wafer bonding and integrated infrared, high-speed FIB metrology by Teh, W H, Deeb, C, Burggraf, J, Wimplinger, M, Matthias, T, Young, R, Senowitz, C, Buxbaum, A

“…We report on recent experimental studies performed as part of a 3D integrated circuit (3DIC) production-worthy process module roadmap check for 300 mm…”
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200 mm wafer-scale substrate transfer of 0.13μmCu∕low-k (Black Diamond™) dual-damascene interconnection to glass substrates by Teh, W. H., Kumar, R., Kwong, D. L.

“…We report a low-temperature (350 °C) pulsed-voltage anodic bonding followed by grind/etch-back method for 200 mm wafer-scale substrate transfer of…”
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Corrections to "200-mm Wafer Scale Transfer of 0.18mum Dual-Damascene Cu/SiO_2Interconnection System to Plastic Substrates" by Teh, W H, Lihui, G, Kumar, R, Kwong, D-L

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200-mm wafer-scale transfer of 0.18-mum dual-damascene Cu/SiO/sub 2/ interconnection system to plastic substrates by Teh, W H, Guo Lihui, Kumar, R, Kwong, D-L

“…We report a low-temperature ( < 200 deg C) 200-mm wafer-scale transfer of a 0.18-mum dual-damascene Cu/SiO/sub 2/ interconnection system to FR-4 plastic…”
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200-mm wafer-scale transfer of 0.18- mu m dual-damascene Cu/SiO sub(2) interconnection system to plastic substrates by Teh, W H, Lihui, Guo, Kumar, R, Kwong, D-L

“…We report a low-temperature (<200 degree C) 200-mm wafer-scale transfer of a 0.18- mu m dual-damascene Cu/SiO sub(2) interconnection system to FR-4 plastic…”
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200 mm wafer-scale epitaxial transfer of single crystal Sion glass by anodic bonding of silicon-on-insulator wafers by Teh, W. H., Trigg, Alastair, Tung, C. H., Kumar, R., Balasubramanian, N., Kwong, D. L.

“…We report a low-temperature (350°C) anodic bonding followed by grind/etch-back method for a 200 mm wafer-scale epitaxial transfer of ultrathin (1.9 kÅ) single…”
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