Search Results - "TAWARA, T"
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1
Effect of structure and composition on optical properties of Er-Sc silicates prepared from multi-nanolayer films
Published in Optics express (23-03-2015)“…Polycrystalline Er-Sc silicates (Er(x)Sc(2-x)SiO₅ and Er(x)Sc(2-x)Si₂O₇) were fabricated using multilayer nanostructured films of Er₂O₃/SiO₂/Sc₂O₃ deposited on…”
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Journal Article -
2
Structural analysis and reduction of in-grown stacking faults in 4H–SiC epilayers
Published in Applied physics letters (16-05-2005)“…We investigated the structure of in-grown stacking faults in the 4H–SiC(0001) epilayers. The in-grown stacking faults nucleate near the substrate/epilayer…”
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3
Coherent transfer of orbital angular momentum to excitons by optical four-wave mixing
Published in Optics express (26-10-2009)“…We demonstrate the coherent transfer of optical orbital angular momentum (OAM) to the center of mass momentum of excitons in semiconductor GaN using a…”
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4
Population dynamics in epitaxial Er2O3 thin films grown on Si(111)
Published in Applied physics letters (17-06-2013)“…We grow single crystal erbium-oxide (Er2O3) epitaxially on a Si (111) substrate by using molecular beam epitaxy and investigate the population dynamics in Er3+…”
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5
Understanding and reduction of degradation phenomena in SiC power devices
Published in 2017 IEEE International Reliability Physics Symposium (IRPS) (01-04-2017)“…Impacts of extended defects on performance and reliability of SiC power devices are reviewed. Threading dislocations in the state-of-the-art SiC wafers do not…”
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Conference Proceeding -
6
Positron annihilation study of vacancy-type defects in high-speed deformed Ni, Cu and Fe
Published in Materials science & engineering. A, Structural materials : properties, microstructure and processing (15-06-2003)“…Vacancies and vacancy clusters in Ni, Cu, and Fe induced by high- and low-speed deformations are studied systematically by positron annihilation techniques and…”
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Journal Article Conference Proceeding -
7
Precise spectroscopy of 167Er:Y2SiO5 based on laser frequency stabilization using a fiber laser comb
Published in Optics express (16-08-2021)Get full text
Journal Article -
8
Cavity polaritons in InGaN microcavities at room temperature
Published in Physical review letters (25-06-2004)“…Cavity polaritons are observed in InGaN quantum well (QW) microcavities at room temperature. High-quality microcavities are fabricated by the wafer-bonding of…”
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9
Cavity-QED assisted attraction between a cavity mode and an exciton mode in a planar photonic-crystal cavity
Published in Optics express (01-02-2010)“…The photoluminescence spectra from a quantum-dot exciton weakly-coupled to a planar photonic-crystal cavity is experimentally investigated by temperature…”
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10
Cavity mode emission in weakly coupled quantum dot--cavity systems
Published in Optics express (13-04-2009)“…We study the origin of bright leaky-cavity mode emission and its influence on photon statistics in weakly coupled quantum dot - semiconductor cavity systems,…”
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Journal Article -
11
Piezoelectric effects on photoluminescence properties in 10-nm-thick InGaN quantum wells
Published in Applied physics letters (08-12-2003)“…We report a large change in the photoluminescence (PL) properties induced by piezoelectric effects found in 10-nm-thick InGaN quantum wells. The time-resolved…”
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12
Real-time synchrotoron radiation X-ray diffraction and abnormal temperature dependence of photoluminescence from erbium silicates on SiO2/Si substrates
Published in AIP advances (01-03-2012)“…The erbium silicate formation processes during annealing in Ar gas were monitored by synchrotron radiation grazing incidence X-ray diffraction (GIXD) in real…”
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13
Quality factor control and lasing characteristics of InAs/InGaAs quantum dots embedded in photonic-crystal nanocavities
Published in Optics express (14-04-2008)“…We demonstrate lasing action with a high spontaneous emission factor and temperature insensitivity in InAs/InGaAs quantum dots (QD) embedded in photonic…”
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Journal Article -
14
Defect structure of gold introduced by high-speed deformation
Published in Materials science & engineering. A, Structural materials : properties, microstructure and processing (15-06-2003)“…The effect of deformation speed on defect structures introduced into bulk gold specimens at 298 K has been investigated systematically over a wide range of…”
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Journal Article Conference Proceeding -
15
Charged exciton emission at 1.3 μ m from single InAs quantum dots grown by metalorganic chemical vapor deposition
Published in Applied physics letters (24-10-2005)“…We have studied the emission properties of self-organized InAs quantum dots (QDs) grown in an InGaAs quantum well by metalorganic chemical vapor deposition…”
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16
Design and construction of a series of compact humanoid robots and development of biped walk control strategies
Published in Robotics and autonomous systems (30-11-2001)“…Design and construction of compact body humanoid robots and various biped locomotion control strategies implemented onto them in the ESYS humanoid project at…”
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Journal Article -
17
Detecting spatially localized excitons in InGaN quantum well structures with a micro-photoluminescence technique
Published in Solid state communications (01-06-2006)“…Spatially localized excitons are observed in InGaN quantum well structures at 4 K by using a micro-photoluminescence (PL) technique. By combining PL and…”
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18
Neurotropism of Swine Haemagglutinating Encephalomyelitis Virus (Coronavirus) in Mice Depending upon Host Age and Route of Infection
Published in Journal of comparative pathology (01-01-2004)“…Mice aged 1, 4 or 8 weeks were inoculated with haemagglutinating encephalomyelitis virus (HEV), strain 67N, by the intracerebral (i.c.), intranasal (i.n.),…”
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19
Three-dimensional topography using an X-ray microbeam and novel slit technique
Published in Physica status solidi. A, Applications and materials science (01-08-2007)“…This paper describes section topography using an X‐ray microbeam and a novel slit having a V‐shaped crevice (V‐slit). The V‐slit is characterized by a…”
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Journal Article Conference Proceeding -
20
Superior suppression of gate current leakage in Al2O3/Si3N4 bilayer-based AlGaN/GaN insulated gate heterostructure field-effect transistors
Published in Journal of electronic materials (01-04-2005)“…AlGaN/GaN-based metal-insulator-semiconductor heterostructure field-effect transistors (MIS-HFETs) with Al2O3/Si3N4 bilayer as insulator have been investigated…”
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