Search Results - "TAKAKUWA, C"

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  1. 1

    High-sensitivity SIMS analysis of carbon in GaN films by molecular ion detection by Takakuwa-Hongo, C., Tomita, M.

    Published in Surface and interface analysis (01-12-1997)
    “…The improvement of the detection sensitivity of carbon in GaN thin films was investigated. Using the molecular ion CN− in SIMS, the secondary ion yields were…”
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    Journal Article
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    Mechanism of wavelength tuning and frequency modulation in three-electrode DFB lasers by Tohyama, M., Funemizu, M., Onomura, M., Takakuwa, C., Suzuki, N.

    “…The static and dynamic characteristics of three-electrode DFB lasers are investigated. In wavelength tuning, the side sections determine the effective Bragg…”
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    Journal Article
  4. 4

    The high-speed limit of FM response in semiconductor lasers by Takakuwa, C., Morinaga, M., Tohyama, M., Suzuki, N.

    Published in IEEE photonics technology letters (01-12-1993)
    “…The high-speed frequency modulation (FM) response has been investigated through rate equation analysis. The intrinsic limit of FM response has been found to be…”
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    Journal Article
  5. 5

    Thermal frequency drift suppression in tunable DFB lasers by plasma induced frequency shift enhancement by Morinaga, M., Funemizu, M., Takakuwa, C., Tohyama, M., Baba, S., Suzuki, N.

    Published in IEEE photonics technology letters (01-04-1994)
    “…The authors propose enhanced-plasma-effect (EPE) lasers for coherent optical frequency division multiplexed networks. In the EPE lasers, the blue frequency…”
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    Journal Article
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    Improvement of Cs-induced surface roughness for high depth resolution profiling of [formula omitted] multilayer films by Takakuwa, C., Tomita, M., Hatanaka, T., Suzuki, I., Franco, G., Yamaguchi, H.

    Published in Applied surface science (01-11-1996)
    “…The Cs ion bombardment during secondary ion mass spectrometry induces surface roughness such as precipitates and ripples on ZnSe. These ripples and…”
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    Journal Article
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    Formation of SiGe source/drain using Ge implantation for floating-body effect resistant SOI MOSFETs by NISHIYAMA, A, ARISUMI, O, TERAUCHI, M, TAKENO, S, SUZUKI, K, TAKAKUWA, C, YOSHIMI, M

    “…SiGe was formed by Ge implantation into silicon on insulator (SOI) substrates with the dosage range from 0.5 to 3×10 16  cm -2 and subsequent annealing in N 2…”
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    Conference Proceeding Journal Article
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    Excitation of giant resonances in the [sup 40]Ca([ital e],[ital e][prime][ital n])[sup 39]Ca reaction by Takakuwa, C., Saito, T., Suzuki, S., Takahisa, K., Tohei, T., Nakagawa, T., Abe, K.

    Published in Physical review. C, Nuclear physics (01-08-1994)
    “…Decay neutrons from the [sup 40]Ca([ital e],[ital e][prime][ital n])[sup 39]Ca reaction were studied in the giant resonance region. The cross sections and…”
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    Journal Article
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